Contactless electroreflectance and photoluminescence study of the sb surfactant effects on InGaAsN multiple quantum wells

H. P. Hsu, J. K. Huang, Y. S. Huang, Der-Yuh Lin, W. C. Chen, Y. K. Su

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The InGaAsN/GaAs multiple quantum wells structure grown on GaAs substrate with Sb surfactant treatment by metalorganic vapor-phase epitaxy has been characterized as a function of temperature in the temperature range between 15 and 300 K by the techniques of contactless electroreflectance (CER) and photoluminescence (PL). The interband transition energies are determined via a lineshape fit to the CER spectra and exhibit a blue-shift with the incorporation of Sb. A careful analysis of the CER and PL spectra has led to the identification of various excitonic transitions. The parameters that describe the temperature dependence of the interband transition energies are evaluated. The optical behavior results from the Sb surfactant treatment are presented and discussed.

Original languageEnglish
Pages (from-to)1067-1074
Number of pages8
JournalChinese Journal of Physics
Volume51
Issue number5
DOIs
Publication statusPublished - 2013 Oct 1

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surfactants
quantum wells
photoluminescence
blue shift
vapor phase epitaxy
temperature dependence
temperature
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Hsu, H. P. ; Huang, J. K. ; Huang, Y. S. ; Lin, Der-Yuh ; Chen, W. C. ; Su, Y. K. / Contactless electroreflectance and photoluminescence study of the sb surfactant effects on InGaAsN multiple quantum wells. In: Chinese Journal of Physics. 2013 ; Vol. 51, No. 5. pp. 1067-1074.
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Contactless electroreflectance and photoluminescence study of the sb surfactant effects on InGaAsN multiple quantum wells. / Hsu, H. P.; Huang, J. K.; Huang, Y. S.; Lin, Der-Yuh; Chen, W. C.; Su, Y. K.

In: Chinese Journal of Physics, Vol. 51, No. 5, 01.10.2013, p. 1067-1074.

Research output: Contribution to journalArticle

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