Contactless electroreflectance and photoluminescence study of the sb surfactant effects on InGaAsN multiple quantum wells

The InGaAsN/GaAs multiple quantum wells structure grown on GaAs substrate with Sb surfactant treatment by metalorganic vapor-phase epitaxy has been characterized as a function of temperature in the temperature range between 15 and 300 K by the techniques of contactless electroreflectance (CER) and photoluminescence (PL). The interband transition energies are determined via a lineshape fit to the CER spectra and exhibit a blue-shift with the incorporation of Sb. A careful analysis of the CER and PL spectra has led to the identification of various excitonic transitions. The parameters that describe the temperature dependence of the interband transition energies are evaluated. The optical behavior results from the Sb surfactant treatment are presented and discussed.