Abstract
The InGaAsN/GaAs multiple quantum wells structure grown on GaAs substrate with Sb surfactant treatment by metalorganic vapor-phase epitaxy has been characterized as a function of temperature in the temperature range between 15 and 300 K by the techniques of contactless electroreflectance (CER) and photoluminescence (PL). The interband transition energies are determined via a lineshape fit to the CER spectra and exhibit a blue-shift with the incorporation of Sb. A careful analysis of the CER and PL spectra has led to the identification of various excitonic transitions. The parameters that describe the temperature dependence of the interband transition energies are evaluated. The optical behavior results from the Sb surfactant treatment are presented and discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 1067-1074 |
| Number of pages | 8 |
| Journal | Chinese Journal of Physics |
| Volume | 51 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2013 Oct 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Contactless electroreflectance and photoluminescence study of the sb surfactant effects on InGaAsN multiple quantum wells. / Hsu, H. P.; Huang, J. K.; Huang, Y. S.; Lin, Der-Yuh; Chen, W. C.; Su, Y. K.
In: Chinese Journal of Physics, Vol. 51, No. 5, 01.10.2013, p. 1067-1074.Research output: Contribution to journal › Article
TY - JOUR
T1 - Contactless electroreflectance and photoluminescence study of the sb surfactant effects on InGaAsN multiple quantum wells
AU - Hsu, H. P.
AU - Huang, J. K.
AU - Huang, Y. S.
AU - Lin, Der-Yuh
AU - Chen, W. C.
AU - Su, Y. K.
PY - 2013/10/1
Y1 - 2013/10/1
N2 - The InGaAsN/GaAs multiple quantum wells structure grown on GaAs substrate with Sb surfactant treatment by metalorganic vapor-phase epitaxy has been characterized as a function of temperature in the temperature range between 15 and 300 K by the techniques of contactless electroreflectance (CER) and photoluminescence (PL). The interband transition energies are determined via a lineshape fit to the CER spectra and exhibit a blue-shift with the incorporation of Sb. A careful analysis of the CER and PL spectra has led to the identification of various excitonic transitions. The parameters that describe the temperature dependence of the interband transition energies are evaluated. The optical behavior results from the Sb surfactant treatment are presented and discussed.
AB - The InGaAsN/GaAs multiple quantum wells structure grown on GaAs substrate with Sb surfactant treatment by metalorganic vapor-phase epitaxy has been characterized as a function of temperature in the temperature range between 15 and 300 K by the techniques of contactless electroreflectance (CER) and photoluminescence (PL). The interband transition energies are determined via a lineshape fit to the CER spectra and exhibit a blue-shift with the incorporation of Sb. A careful analysis of the CER and PL spectra has led to the identification of various excitonic transitions. The parameters that describe the temperature dependence of the interband transition energies are evaluated. The optical behavior results from the Sb surfactant treatment are presented and discussed.
UR - http://www.scopus.com/inward/record.url?scp=84894630262&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84894630262&partnerID=8YFLogxK
U2 - 10.6122/CJP.51.1067
DO - 10.6122/CJP.51.1067
M3 - Article
AN - SCOPUS:84894630262
VL - 51
SP - 1067
EP - 1074
JO - Chinese Journal of Physics
JF - Chinese Journal of Physics
SN - 0577-9073
IS - 5
ER -