Conduction-type control of SnSx films prepared by the sol-gel method for different sulfur contents

Chung Cheng Huang, Yow-Jon Lin, Cheng Yu Chuang, Chia-Jyi Liu, Yao Wei Yang

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

The effect of S content on the electrical property of the sol-gel SnS x films was examined. The observed conduction-type changes are related to the different ratios between the concentrations of Sn4+ and Sn2+. The experimental identification confirms that n-type conversion is due to an increase in the atomic concentration ratio of Sn 4+/(Sn4+ + Sn2+) in the S-rich film. The probability of having formed Sn vacancies (VSn) should be high under S-rich growth conditions. Transformation from VSn to VSn2- is accompanied by lattice relaxation. Therefore, transformation from Sn 2+ to Sn4+ is an offset to lattice relaxation under S-rich growth conditions, increasing the electron density and producing n-type conversion. A suitable sulfur concentration is an important issue for tuning conduction type of SnSx.

Original languageEnglish
Pages (from-to)208-211
Number of pages4
JournalJournal of Alloys and Compounds
Volume553
DOIs
Publication statusPublished - 2013 Mar 15

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Sulfur
Sol-gel process
Vacancies
Sol-gels
Carrier concentration
Electric properties
Tuning

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Chemistry
  • Metals and Alloys

Cite this

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title = "Conduction-type control of SnSx films prepared by the sol-gel method for different sulfur contents",
abstract = "The effect of S content on the electrical property of the sol-gel SnS x films was examined. The observed conduction-type changes are related to the different ratios between the concentrations of Sn4+ and Sn2+. The experimental identification confirms that n-type conversion is due to an increase in the atomic concentration ratio of Sn 4+/(Sn4+ + Sn2+) in the S-rich film. The probability of having formed Sn vacancies (VSn) should be high under S-rich growth conditions. Transformation from VSn to VSn2- is accompanied by lattice relaxation. Therefore, transformation from Sn 2+ to Sn4+ is an offset to lattice relaxation under S-rich growth conditions, increasing the electron density and producing n-type conversion. A suitable sulfur concentration is an important issue for tuning conduction type of SnSx.",
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Conduction-type control of SnSx films prepared by the sol-gel method for different sulfur contents. / Huang, Chung Cheng; Lin, Yow-Jon; Chuang, Cheng Yu; Liu, Chia-Jyi; Yang, Yao Wei.

In: Journal of Alloys and Compounds, Vol. 553, 15.03.2013, p. 208-211.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Conduction-type control of SnSx films prepared by the sol-gel method for different sulfur contents

AU - Huang, Chung Cheng

AU - Lin, Yow-Jon

AU - Chuang, Cheng Yu

AU - Liu, Chia-Jyi

AU - Yang, Yao Wei

PY - 2013/3/15

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AB - The effect of S content on the electrical property of the sol-gel SnS x films was examined. The observed conduction-type changes are related to the different ratios between the concentrations of Sn4+ and Sn2+. The experimental identification confirms that n-type conversion is due to an increase in the atomic concentration ratio of Sn 4+/(Sn4+ + Sn2+) in the S-rich film. The probability of having formed Sn vacancies (VSn) should be high under S-rich growth conditions. Transformation from VSn to VSn2- is accompanied by lattice relaxation. Therefore, transformation from Sn 2+ to Sn4+ is an offset to lattice relaxation under S-rich growth conditions, increasing the electron density and producing n-type conversion. A suitable sulfur concentration is an important issue for tuning conduction type of SnSx.

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