Conduction behavior conversion for Cu-doped ZnS/n-type Si devices with different Cu contents

Wei Shih Ni, Yow Jon Lin

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Currents through Cu-doped ZnS (ZnCuS)/n-type Si structures were studied. The electrical conduction investigations suggest that the carrier transport behavior is governed by the Poole–Frenkel emission for ZnCuS/n-type Si devices having the low Cu concentration. However, the carrier transport behavior is governed by the thermionic emission for ZnCuS/n-type Si devices having the high Cu concentration. The photoluminescence result revealed that sulfur vacancy (VS) is the origin of conduction behavior conversion. It is shown that the increased Cu concentration leads to the reduced formation probability of VS. The dependence of VS on the film composition was identified for providing a guide to control the current transport behavior of ZnCuS/n-type Si devices.

Original languageEnglish
Pages (from-to)1127-1132
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Volume119
Issue number3
DOIs
Publication statusPublished - 2015 Jun 1

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Carrier transport
Thermionic emission
Sulfur
Vacancies
Photoluminescence
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

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abstract = "Currents through Cu-doped ZnS (ZnCuS)/n-type Si structures were studied. The electrical conduction investigations suggest that the carrier transport behavior is governed by the Poole–Frenkel emission for ZnCuS/n-type Si devices having the low Cu concentration. However, the carrier transport behavior is governed by the thermionic emission for ZnCuS/n-type Si devices having the high Cu concentration. The photoluminescence result revealed that sulfur vacancy (VS) is the origin of conduction behavior conversion. It is shown that the increased Cu concentration leads to the reduced formation probability of VS. The dependence of VS on the film composition was identified for providing a guide to control the current transport behavior of ZnCuS/n-type Si devices.",
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Conduction behavior conversion for Cu-doped ZnS/n-type Si devices with different Cu contents. / Ni, Wei Shih; Lin, Yow Jon.

In: Applied Physics A: Materials Science and Processing, Vol. 119, No. 3, 01.06.2015, p. 1127-1132.

Research output: Contribution to journalArticle

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T1 - Conduction behavior conversion for Cu-doped ZnS/n-type Si devices with different Cu contents

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AU - Lin, Yow Jon

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AB - Currents through Cu-doped ZnS (ZnCuS)/n-type Si structures were studied. The electrical conduction investigations suggest that the carrier transport behavior is governed by the Poole–Frenkel emission for ZnCuS/n-type Si devices having the low Cu concentration. However, the carrier transport behavior is governed by the thermionic emission for ZnCuS/n-type Si devices having the high Cu concentration. The photoluminescence result revealed that sulfur vacancy (VS) is the origin of conduction behavior conversion. It is shown that the increased Cu concentration leads to the reduced formation probability of VS. The dependence of VS on the film composition was identified for providing a guide to control the current transport behavior of ZnCuS/n-type Si devices.

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