Abstract
Currents through Cu-doped ZnS (ZnCuS)/n-type Si structures were studied. The electrical conduction investigations suggest that the carrier transport behavior is governed by the Poole–Frenkel emission for ZnCuS/n-type Si devices having the low Cu concentration. However, the carrier transport behavior is governed by the thermionic emission for ZnCuS/n-type Si devices having the high Cu concentration. The photoluminescence result revealed that sulfur vacancy (VS) is the origin of conduction behavior conversion. It is shown that the increased Cu concentration leads to the reduced formation probability of VS. The dependence of VS on the film composition was identified for providing a guide to control the current transport behavior of ZnCuS/n-type Si devices.
| Original language | English |
|---|---|
| Pages (from-to) | 1127-1132 |
| Number of pages | 6 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 119 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2015 Jun 1 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
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Conduction behavior conversion for Cu-doped ZnS/n-type Si devices with different Cu contents. / Ni, Wei Shih; Lin, Yow Jon.
In: Applied Physics A: Materials Science and Processing, Vol. 119, No. 3, 01.06.2015, p. 1127-1132.Research output: Contribution to journal › Article
TY - JOUR
T1 - Conduction behavior conversion for Cu-doped ZnS/n-type Si devices with different Cu contents
AU - Ni, Wei Shih
AU - Lin, Yow Jon
PY - 2015/6/1
Y1 - 2015/6/1
N2 - Currents through Cu-doped ZnS (ZnCuS)/n-type Si structures were studied. The electrical conduction investigations suggest that the carrier transport behavior is governed by the Poole–Frenkel emission for ZnCuS/n-type Si devices having the low Cu concentration. However, the carrier transport behavior is governed by the thermionic emission for ZnCuS/n-type Si devices having the high Cu concentration. The photoluminescence result revealed that sulfur vacancy (VS) is the origin of conduction behavior conversion. It is shown that the increased Cu concentration leads to the reduced formation probability of VS. The dependence of VS on the film composition was identified for providing a guide to control the current transport behavior of ZnCuS/n-type Si devices.
AB - Currents through Cu-doped ZnS (ZnCuS)/n-type Si structures were studied. The electrical conduction investigations suggest that the carrier transport behavior is governed by the Poole–Frenkel emission for ZnCuS/n-type Si devices having the low Cu concentration. However, the carrier transport behavior is governed by the thermionic emission for ZnCuS/n-type Si devices having the high Cu concentration. The photoluminescence result revealed that sulfur vacancy (VS) is the origin of conduction behavior conversion. It is shown that the increased Cu concentration leads to the reduced formation probability of VS. The dependence of VS on the film composition was identified for providing a guide to control the current transport behavior of ZnCuS/n-type Si devices.
UR - http://www.scopus.com/inward/record.url?scp=84939964617&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84939964617&partnerID=8YFLogxK
U2 - 10.1007/s00339-015-9079-2
DO - 10.1007/s00339-015-9079-2
M3 - Article
AN - SCOPUS:84939964617
VL - 119
SP - 1127
EP - 1132
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
SN - 0947-8396
IS - 3
ER -