Conduction behavior conversion for Cu-doped ZnS/n-type Si devices with different Cu contents

Wei Shih Ni; Yow Jon Lin

doi:10.1007/s00339-015-9079-2

Conduction behavior conversion for Cu-doped ZnS/n-type Si devices with different Cu contents

Wei Shih Ni, Yow Jon Lin

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Currents through Cu-doped ZnS (ZnCuS)/n-type Si structures were studied. The electrical conduction investigations suggest that the carrier transport behavior is governed by the Poole–Frenkel emission for ZnCuS/n-type Si devices having the low Cu concentration. However, the carrier transport behavior is governed by the thermionic emission for ZnCuS/n-type Si devices having the high Cu concentration. The photoluminescence result revealed that sulfur vacancy (V_S) is the origin of conduction behavior conversion. It is shown that the increased Cu concentration leads to the reduced formation probability of V_S. The dependence of V_S on the film composition was identified for providing a guide to control the current transport behavior of ZnCuS/n-type Si devices.

Original language	English
Pages (from-to)	1127-1132
Number of pages	6
Journal	Applied Physics A: Materials Science and Processing
Volume	119
Issue number	3
DOIs	https://doi.org/10.1007/s00339-015-9079-2
Publication status	Published - 2015 Jun 1

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)

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title = "Conduction behavior conversion for Cu-doped ZnS/n-type Si devices with different Cu contents",

abstract = "Currents through Cu-doped ZnS (ZnCuS)/n-type Si structures were studied. The electrical conduction investigations suggest that the carrier transport behavior is governed by the Poole–Frenkel emission for ZnCuS/n-type Si devices having the low Cu concentration. However, the carrier transport behavior is governed by the thermionic emission for ZnCuS/n-type Si devices having the high Cu concentration. The photoluminescence result revealed that sulfur vacancy (VS) is the origin of conduction behavior conversion. It is shown that the increased Cu concentration leads to the reduced formation probability of VS. The dependence of VS on the film composition was identified for providing a guide to control the current transport behavior of ZnCuS/n-type Si devices.",

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AU - Ni, Wei Shih

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N2 - Currents through Cu-doped ZnS (ZnCuS)/n-type Si structures were studied. The electrical conduction investigations suggest that the carrier transport behavior is governed by the Poole–Frenkel emission for ZnCuS/n-type Si devices having the low Cu concentration. However, the carrier transport behavior is governed by the thermionic emission for ZnCuS/n-type Si devices having the high Cu concentration. The photoluminescence result revealed that sulfur vacancy (VS) is the origin of conduction behavior conversion. It is shown that the increased Cu concentration leads to the reduced formation probability of VS. The dependence of VS on the film composition was identified for providing a guide to control the current transport behavior of ZnCuS/n-type Si devices.

AB - Currents through Cu-doped ZnS (ZnCuS)/n-type Si structures were studied. The electrical conduction investigations suggest that the carrier transport behavior is governed by the Poole–Frenkel emission for ZnCuS/n-type Si devices having the low Cu concentration. However, the carrier transport behavior is governed by the thermionic emission for ZnCuS/n-type Si devices having the high Cu concentration. The photoluminescence result revealed that sulfur vacancy (VS) is the origin of conduction behavior conversion. It is shown that the increased Cu concentration leads to the reduced formation probability of VS. The dependence of VS on the film composition was identified for providing a guide to control the current transport behavior of ZnCuS/n-type Si devices.

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