Comparison of two-dimensional electron gas of etched and unetched InAlAs/InGaAs/InAlAs metamorphic high electron mobility transistor structures

Jenq-Shinn Wu, C. C. Hung, C. T. Lu, Der-Yuh Lin

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We present the photoluminescence (PL) and Hall studies on the two-dimensional electron gas (2DEG) of etched and unetched In0.5Al0.5As/In0.5Ga0.5As metamorphic high electron mobility transistor (mHEMT) structures. The PL technique is shown to be capable of extracting the 2DEG sheet carrier concentration in a complete mHEMT structure directly without making contacts or processing, while the Hall measurement gives a substantially higher concentration due to the parallel conduction of the heavily doped cap layer. We also report a new frequency-dependent photo-Hall technique to obtain the absorption coefficient of the In0.5Ga0.5As quantum-well channel layer.

Original languageEnglish
Pages (from-to)1212-1215
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume42
Issue number4
DOIs
Publication statusPublished - 2010 Feb 1

Fingerprint

Two dimensional electron gas
High electron mobility transistors
high electron mobility transistors
electron gas
photoluminescence
Photoluminescence
caps
absorptivity
quantum wells
conduction
Semiconductor quantum wells
Carrier concentration
Processing

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Cite this

@article{5708c22388024a86b26a928d2d6b28dd,
title = "Comparison of two-dimensional electron gas of etched and unetched InAlAs/InGaAs/InAlAs metamorphic high electron mobility transistor structures",
abstract = "We present the photoluminescence (PL) and Hall studies on the two-dimensional electron gas (2DEG) of etched and unetched In0.5Al0.5As/In0.5Ga0.5As metamorphic high electron mobility transistor (mHEMT) structures. The PL technique is shown to be capable of extracting the 2DEG sheet carrier concentration in a complete mHEMT structure directly without making contacts or processing, while the Hall measurement gives a substantially higher concentration due to the parallel conduction of the heavily doped cap layer. We also report a new frequency-dependent photo-Hall technique to obtain the absorption coefficient of the In0.5Ga0.5As quantum-well channel layer.",
author = "Jenq-Shinn Wu and Hung, {C. C.} and Lu, {C. T.} and Der-Yuh Lin",
year = "2010",
month = "2",
day = "1",
doi = "10.1016/j.physe.2009.11.113",
language = "English",
volume = "42",
pages = "1212--1215",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "4",

}

TY - JOUR

T1 - Comparison of two-dimensional electron gas of etched and unetched InAlAs/InGaAs/InAlAs metamorphic high electron mobility transistor structures

AU - Wu, Jenq-Shinn

AU - Hung, C. C.

AU - Lu, C. T.

AU - Lin, Der-Yuh

PY - 2010/2/1

Y1 - 2010/2/1

N2 - We present the photoluminescence (PL) and Hall studies on the two-dimensional electron gas (2DEG) of etched and unetched In0.5Al0.5As/In0.5Ga0.5As metamorphic high electron mobility transistor (mHEMT) structures. The PL technique is shown to be capable of extracting the 2DEG sheet carrier concentration in a complete mHEMT structure directly without making contacts or processing, while the Hall measurement gives a substantially higher concentration due to the parallel conduction of the heavily doped cap layer. We also report a new frequency-dependent photo-Hall technique to obtain the absorption coefficient of the In0.5Ga0.5As quantum-well channel layer.

AB - We present the photoluminescence (PL) and Hall studies on the two-dimensional electron gas (2DEG) of etched and unetched In0.5Al0.5As/In0.5Ga0.5As metamorphic high electron mobility transistor (mHEMT) structures. The PL technique is shown to be capable of extracting the 2DEG sheet carrier concentration in a complete mHEMT structure directly without making contacts or processing, while the Hall measurement gives a substantially higher concentration due to the parallel conduction of the heavily doped cap layer. We also report a new frequency-dependent photo-Hall technique to obtain the absorption coefficient of the In0.5Ga0.5As quantum-well channel layer.

UR - http://www.scopus.com/inward/record.url?scp=76949089836&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76949089836&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2009.11.113

DO - 10.1016/j.physe.2009.11.113

M3 - Article

VL - 42

SP - 1212

EP - 1215

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 4

ER -