Comparison of two-dimensional electron gas of etched and unetched InAlAs/InGaAs/InAlAs metamorphic high electron mobility transistor structures

Jenq-Shinn Wu, C. C. Hung, C. T. Lu, Der-Yuh Lin

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We present the photoluminescence (PL) and Hall studies on the two-dimensional electron gas (2DEG) of etched and unetched In0.5Al0.5As/In0.5Ga0.5As metamorphic high electron mobility transistor (mHEMT) structures. The PL technique is shown to be capable of extracting the 2DEG sheet carrier concentration in a complete mHEMT structure directly without making contacts or processing, while the Hall measurement gives a substantially higher concentration due to the parallel conduction of the heavily doped cap layer. We also report a new frequency-dependent photo-Hall technique to obtain the absorption coefficient of the In0.5Ga0.5As quantum-well channel layer.

Original languageEnglish
Pages (from-to)1212-1215
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume42
Issue number4
DOIs
Publication statusPublished - 2010 Feb 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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