Comparison of AZO, GZO, and AGZO thin films TCOs applied for a-Si solar cells

Y. C. Lin, T. Y. Chen, L. C. Wang, S. Y. Lien

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Abstract

This study prepared aluminum and gallium co-doped zinc oxide (AGZO) thin films using pulsed direct current magnetron sputtering, and studied the electrical properties, transmittance, effects of texturing, and applicability as the front contact for a-Si:H solar cells. Textured ZnO:Al (AZO) and ZnO:Ga (GZO) thin films were also compared with AGZO thin film to evaluate their performance as front contacts. Experimental results show that AGZO films with the highest figure of merit φ TC value (24.64 × 10 -3 ω -1) were obtained at Al and Ga doping concentrations of 0.54 wt and 1.165 wt, respectively. The textured AGZO films used as the front contact in a-Si:H solar cells achieved the following results: V OC = 0.77 V, J SC = 16.5 mA/cm 2, FF 59, and conversion efficiency of 7.53. AZO and GZO films have better electrical properties than AGZO film; however, AGZO film has superior transmittance in the near-infrared (NIR) region and higher J SC, conversion efficiency and external quantum efficiency (EQE) than AZO and GZO films under a similar haze value.

Original languageEnglish
Pages (from-to)H599-H604
JournalJournal of the Electrochemical Society
Volume159
Issue number6
DOIs
Publication statusPublished - 2012 May 28

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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