Comment on "threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment" [Appl. Phys. Lett. 97, 203508 (2010)]

Yow-Jon Lin, Chia Lung Tsai

Research output: Contribution to journalComment/debate

Original languageEnglish
Article number176101
JournalApplied Physics Letters
Volume98
Issue number17
DOIs
Publication statusPublished - 2011 Apr 25

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nitrogen plasma
threshold voltage
nanowires
transistors
oxides

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Comment on {"}threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment{"} [Appl. Phys. Lett. 97, 203508 (2010)]",
author = "Yow-Jon Lin and Tsai, {Chia Lung}",
year = "2011",
month = "4",
day = "25",
doi = "10.1063/1.3584000",
language = "English",
volume = "98",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "17",

}

Comment on "threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment" [Appl. Phys. Lett. 97, 203508 (2010)]. / Lin, Yow-Jon; Tsai, Chia Lung.

In: Applied Physics Letters, Vol. 98, No. 17, 176101, 25.04.2011.

Research output: Contribution to journalComment/debate

TY - JOUR

T1 - Comment on "threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment" [Appl. Phys. Lett. 97, 203508 (2010)]

AU - Lin, Yow-Jon

AU - Tsai, Chia Lung

PY - 2011/4/25

Y1 - 2011/4/25

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U2 - 10.1063/1.3584000

DO - 10.1063/1.3584000

M3 - Comment/debate

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

M1 - 176101

ER -