Comment on "threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment" [Appl. Phys. Lett. 97, 203508 (2010)]

Yow Jon Lin, Chia Lung Tsai

Research output: Contribution to journal › Comment/debate

Original languageEnglish
Article number176101
JournalApplied Physics Letters
Volume98
Issue number17
DOIs
Publication statusPublished - 2011 Apr 25

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nitrogen plasma
threshold voltage
nanowires
transistors
oxides

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lin, Yow Jon ; Tsai, Chia Lung. / Comment on "threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment" [Appl. Phys. Lett. 97, 203508 (2010)]. In: Applied Physics Letters. 2011 ; Vol. 98, No. 17.
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Lin, YJ & Tsai, CL 2011, 'Comment on "threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment" [Appl. Phys. Lett. 97, 203508 (2010)]', Applied Physics Letters, vol. 98, no. 17, 176101. https://doi.org/10.1063/1.3584000

Comment on "threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment" [Appl. Phys. Lett. 97, 203508 (2010)]. / Lin, Yow Jon; Tsai, Chia Lung.

In: Applied Physics Letters, Vol. 98, No. 17, 176101, 25.04.2011.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Comment on "threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment" [Appl. Phys. Lett. 97, 203508 (2010)]

AU - Lin, Yow Jon

AU - Tsai, Chia Lung

PY - 2011/4/25

Y1 - 2011/4/25

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U2 - 10.1063/1.3584000

DO - 10.1063/1.3584000

M3 - Comment/debate

AN - SCOPUS:79955676883

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

M1 - 176101

ER -

Lin YJ, Tsai CL. Comment on "threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment" [Appl. Phys. Lett. 97, 203508 (2010)]. Applied Physics Letters. 2011 Apr 25;98(17). 176101. https://doi.org/10.1063/1.3584000

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