Comment on "threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment" [Appl. Phys. Lett. 97, 203508 (2010)]

Yow Jon Lin; Chia Lung Tsai

doi:10.1063/1.3584000

Comment on "threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment" [Appl. Phys. Lett. 97, 203508 (2010)]

Graduate Institute of Photonics

Research output: Contribution to journal › Comment/debate

Original language	English
Article number	176101
Journal	Applied Physics Letters
Volume	98
Issue number	17
DOIs	https://doi.org/10.1063/1.3584000
Publication status	Published - 2011 Apr 25

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3584000

Cite this

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title = "Comment on {"}threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment{"} [Appl. Phys. Lett. 97, 203508 (2010)]",

author = "Lin, {Yow Jon} and Tsai, {Chia Lung}",

year = "2011",

month = apr,

day = "25",

doi = "10.1063/1.3584000",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "17",

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AU - Lin, Yow Jon

AU - Tsai, Chia Lung

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DO - 10.1063/1.3584000

M3 - Comment/debate

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VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

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