Comment on "mechanism for the increase of indium-tin-oxide work function by O2 inductively coupled plasma treatment" [J. Appl. Phys. 95, 586 (2004)]

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A high work function on indium tin oxide (ITO) surfaces with O2 inductively coupled plasma (ICP) treatment was obtained in the paper: "Mechanism for the increase of indium tin oxide work function by O2 inductively coupled plasma treatment" [Lee, J. Appl. Phys. 95, 586 (2004)]. They attributed this to the higher work function of the larger upward band bending and the larger electron affinity of the ITO near the surface by the ICP treatment. In this Comment, we indicate the mistake in their analysis of the observed result by synchrotron radiation photoemission spectroscopy.

Original languageEnglish
Article number036104
JournalJournal of Applied Physics
Issue number3
Publication statusPublished - 2007 Feb 26


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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