Comment on "influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts" [ Appl. Phys. Lett. 89, 033503 (2006)]

Yow Jon Lin; Chia Lung Tsai; Day Shan Liu

doi:10.1063/1.2435354

Comment on "influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts" [ Appl. Phys. Lett. 89, 033503 (2006)]

Yow Jon Lin, Chia Lung Tsai, Day Shan Liu

Graduate Institute of Photonics

Research output: Contribution to journal › Comment/debate

1 Citation (Scopus)

Original language	English
Article number	046101
Journal	Applied Physics Letters
Volume	90
Issue number	4
DOIs	https://doi.org/10.1063/1.2435354
Publication status	Published - 2007 Feb 5

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2435354

Cite this

Lin, Y. J., Tsai, C. L., & Liu, D. S. (2007). Comment on "influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts" [ Appl. Phys. Lett. 89, 033503 (2006)]. Applied Physics Letters, 90(4), [046101]. https://doi.org/10.1063/1.2435354

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