Comment on "influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts" [ Appl. Phys. Lett. 89, 033503 (2006)]

Yow-Jon Lin, Chia Lung Tsai, Day Shan Liu

Research output: Contribution to journalComment/debate

1 Citation (Scopus)
Original languageEnglish
Article number046101
JournalApplied Physics Letters
Volume90
Issue number4
DOIs
Publication statusPublished - 2007 Feb 5

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indium oxides
tin oxides
electric contacts
leakage
thin films

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Comment on {"}influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts{"} [ Appl. Phys. Lett. 89, 033503 (2006)]",
author = "Yow-Jon Lin and Tsai, {Chia Lung} and Liu, {Day Shan}",
year = "2007",
month = "2",
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language = "English",
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journal = "Applied Physics Letters",
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T1 - Comment on "influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts" [ Appl. Phys. Lett. 89, 033503 (2006)]

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AU - Tsai, Chia Lung

AU - Liu, Day Shan

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DO - 10.1063/1.2435354

M3 - Comment/debate

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 046101

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