Comment on "influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts" [ Appl. Phys. Lett. 89, 033503 (2006)]

Yow-Jon Lin, Chia Lung Tsai, Day Shan Liu

Research output: Contribution to journal › Comment/debate

1 Citation (Scopus)
Original languageEnglish
Article number046101
JournalApplied Physics Letters
Volume90
Issue number4
DOIs
Publication statusPublished - 2007 Feb 5

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indium oxides
tin oxides
electric contacts
leakage
thin films

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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Lin, Yow-Jon ; Tsai, Chia Lung ; Liu, Day Shan. / Comment on "influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts" [ Appl. Phys. Lett. 89, 033503 (2006)]. In: Applied Physics Letters. 2007 ; Vol. 90, No. 4.
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Lin, Y-J, Tsai, CL & Liu, DS 2007, 'Comment on "influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts" [ Appl. Phys. Lett. 89, 033503 (2006)]', Applied Physics Letters, vol. 90, no. 4, 046101. https://doi.org/10.1063/1.2435354

Comment on "influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts" [ Appl. Phys. Lett. 89, 033503 (2006)]. / Lin, Yow-Jon; Tsai, Chia Lung; Liu, Day Shan.

In: Applied Physics Letters, Vol. 90, No. 4, 046101, 05.02.2007.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Comment on "influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts" [ Appl. Phys. Lett. 89, 033503 (2006)]

AU - Lin, Yow-Jon

AU - Tsai, Chia Lung

AU - Liu, Day Shan

PY - 2007/2/5

Y1 - 2007/2/5

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U2 - 10.1063/1.2435354

DO - 10.1063/1.2435354

M3 - Comment/debate

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 046101

ER -

Lin Y-J, Tsai CL, Liu DS. Comment on "influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts" [ Appl. Phys. Lett. 89, 033503 (2006)]. Applied Physics Letters. 2007 Feb 5;90(4). 046101. https://doi.org/10.1063/1.2435354

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