Comment on "Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing" [Appl. Phys. Lett. 82, 4301 (2003)] (multiple letters)

Yow-Jon Lin, Kuo Chen Wu, Chang Min Jeon, Jong Lam Lee

Research output: Contribution to journalLetter

6 Citations (Scopus)
Original languageEnglish
Pages (from-to)5319-5321
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number25
DOIs
Publication statusPublished - 2003 Dec 22

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oxidation
annealing
augmentation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Comment on {"}Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing{"} [Appl. Phys. Lett. 82, 4301 (2003)] (multiple letters)",
author = "Yow-Jon Lin and Wu, {Kuo Chen} and Jeon, {Chang Min} and Lee, {Jong Lam}",
year = "2003",
month = "12",
day = "22",
doi = "10.1063/1.1634693",
language = "English",
volume = "83",
pages = "5319--5321",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
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}

Comment on "Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing" [Appl. Phys. Lett. 82, 4301 (2003)] (multiple letters). / Lin, Yow-Jon; Wu, Kuo Chen; Jeon, Chang Min; Lee, Jong Lam.

In: Applied Physics Letters, Vol. 83, No. 25, 22.12.2003, p. 5319-5321.

Research output: Contribution to journalLetter

TY - JOUR

T1 - Comment on "Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing" [Appl. Phys. Lett. 82, 4301 (2003)] (multiple letters)

AU - Lin, Yow-Jon

AU - Wu, Kuo Chen

AU - Jeon, Chang Min

AU - Lee, Jong Lam

PY - 2003/12/22

Y1 - 2003/12/22

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U2 - 10.1063/1.1634693

DO - 10.1063/1.1634693

M3 - Letter

AN - SCOPUS:0942266898

VL - 83

SP - 5319

EP - 5321

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

ER -