Comment on "Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing" [Appl. Phys. Lett. 82, 4301 (2003)] (multiple letters)

Yow-Jon Lin; Kuo Chen Wu; Chang Min Jeon; Jong Lam Lee

doi:10.1063/1.1634693

Comment on "Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing" [Appl. Phys. Lett. 82, 4301 (2003)] (multiple letters)

Yow-Jon Lin, Kuo Chen Wu, Chang Min Jeon, Jong Lam Lee

Graduate Institute of Photonics

Research output: Contribution to journal › Letter

6 Citations (Scopus)

Original language	English
Pages (from-to)	5319-5321
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	25
DOIs	https://doi.org/10.1063/1.1634693
Publication status	Published - 2003 Dec 22

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

Lin, Y-J., Wu, K. C., Jeon, C. M., & Lee, J. L. (2003). Comment on "Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing" [Appl. Phys. Lett. 82, 4301 (2003)] (multiple letters). Applied Physics Letters, 83(25), 5319-5321. https://doi.org/10.1063/1.1634693

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AU - Jeon, Chang Min

AU - Lee, Jong Lam

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Access to Document

10.1063/1.1634693