@article{47783a4404f44dde8071bdc92fe588ab,
title = "Comment on {"}Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing{"} [Appl. Phys. Lett. 82, 4301 (2003)] (multiple letters)",
author = "Lin, {Yow Jon} and Wu, {Kuo Chen} and Jeon, {Chang Min} and Lee, {Jong Lam}",
note = "Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",
year = "2003",
month = dec,
day = "22",
doi = "10.1063/1.1634693",
language = "English",
volume = "83",
pages = "5319--5321",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "25",
}