Comment on "depletion width measurement in an organic Schottky contact using a metal-semiconductor field-effect transistor" [Appl. Phys. Lett. 91, 083513 (2007)]

Yow-Jon Lin

Research output: Contribution to journal › Comment/debate

Original languageEnglish
Article number096101
JournalApplied Physics Letters
Volume97
Issue number9
DOIs
Publication statusPublished - 2010 Aug 30

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electric contacts
depletion
field effect transistors
metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lin, Yow-Jon. / Comment on "depletion width measurement in an organic Schottky contact using a metal-semiconductor field-effect transistor" [Appl. Phys. Lett. 91, 083513 (2007)]. In: Applied Physics Letters. 2010 ; Vol. 97, No. 9.
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Lin, Y-J 2010, 'Comment on "depletion width measurement in an organic Schottky contact using a metal-semiconductor field-effect transistor" [Appl. Phys. Lett. 91, 083513 (2007)]', Applied Physics Letters, vol. 97, no. 9, 096101. https://doi.org/10.1063/1.3475395

Comment on "depletion width measurement in an organic Schottky contact using a metal-semiconductor field-effect transistor" [Appl. Phys. Lett. 91, 083513 (2007)]. / Lin, Yow-Jon.

In: Applied Physics Letters, Vol. 97, No. 9, 096101, 30.08.2010.

Research output: Contribution to journal › Comment/debate

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AU - Lin, Yow-Jon

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DO - 10.1063/1.3475395

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JO - Applied Physics Letters

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SN - 0003-6951

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Lin Y-J. Comment on "depletion width measurement in an organic Schottky contact using a metal-semiconductor field-effect transistor" [Appl. Phys. Lett. 91, 083513 (2007)]. Applied Physics Letters. 2010 Aug 30;97(9). 096101. https://doi.org/10.1063/1.3475395

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