Comment on "deep ultraviolet and near infrared photodiode based on n-ZnO/p -silicon nanowire heterojunction at low temperature" [Appl. Phys. Lett. 94, 013503 (2009)]

Research output: Contribution to journalComment/debate

2 Citations (Scopus)
Original languageEnglish
Article number166102
JournalApplied Physics Letters
Volume94
Issue number16
DOIs
Publication statusPublished - 2009 May 6

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photodiodes
heterojunctions
nanowires
silicon

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{82ad6341836045448c47a8567e72c1f1,
title = "Comment on {"}deep ultraviolet and near infrared photodiode based on n-ZnO/p -silicon nanowire heterojunction at low temperature{"} [Appl. Phys. Lett. 94, 013503 (2009)]",
author = "Yow-Jon Lin",
year = "2009",
month = "5",
day = "6",
doi = "10.1063/1.3119197",
language = "English",
volume = "94",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

TY - JOUR

T1 - Comment on "deep ultraviolet and near infrared photodiode based on n-ZnO/p -silicon nanowire heterojunction at low temperature" [Appl. Phys. Lett. 94, 013503 (2009)]

AU - Lin, Yow-Jon

PY - 2009/5/6

Y1 - 2009/5/6

UR - http://www.scopus.com/inward/record.url?scp=65449180308&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65449180308&partnerID=8YFLogxK

U2 - 10.1063/1.3119197

DO - 10.1063/1.3119197

M3 - Comment/debate

AN - SCOPUS:65449180308

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

M1 - 166102

ER -