Comment on "contact mechanisms and design principles for alloyed Ohmic contacts to n-GaN " [J. Appl. Phys. 95, 7940 (2004)]

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Abstract

The contact mechanism and design principles for alloyed Ohmic contacts to n-GaN were investigated in Mohammad's paper [J. Appl. Phys. 95, 7940 (2004)]. Mohammad's study demonstrated that both tunneling and thermionic emission were equally important for low resistivity at the metals/ n-GaN interfaces. As regards this Comment, we point out the fundamental errors of this interpretation. In addition, we find that the results shown in Figs. 3-6 of Mohammad's paper are incorrect because the lower effective barrier height (BH) of less than 0 eV (due to the induced BH reduction by image force lowering or band gap narrowing) and a variable (c1) were neglected by the author.

Original languageEnglish
Article number073707
JournalJournal of Applied Physics
Volume100
Issue number7
DOIs
Publication statusPublished - 2006 Oct 20

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electric contacts
thermionic emission
electrical resistivity
metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

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title = "Comment on {"}contact mechanisms and design principles for alloyed Ohmic contacts to n-GaN {"} [J. Appl. Phys. 95, 7940 (2004)]",
abstract = "The contact mechanism and design principles for alloyed Ohmic contacts to n-GaN were investigated in Mohammad's paper [J. Appl. Phys. 95, 7940 (2004)]. Mohammad's study demonstrated that both tunneling and thermionic emission were equally important for low resistivity at the metals/ n-GaN interfaces. As regards this Comment, we point out the fundamental errors of this interpretation. In addition, we find that the results shown in Figs. 3-6 of Mohammad's paper are incorrect because the lower effective barrier height (BH) of less than 0 eV (due to the induced BH reduction by image force lowering or band gap narrowing) and a variable (c1) were neglected by the author.",
author = "Yow-Jon Lin",
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doi = "10.1063/1.2353254",
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T1 - Comment on "contact mechanisms and design principles for alloyed Ohmic contacts to n-GaN " [J. Appl. Phys. 95, 7940 (2004)]

AU - Lin, Yow-Jon

PY - 2006/10/20

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N2 - The contact mechanism and design principles for alloyed Ohmic contacts to n-GaN were investigated in Mohammad's paper [J. Appl. Phys. 95, 7940 (2004)]. Mohammad's study demonstrated that both tunneling and thermionic emission were equally important for low resistivity at the metals/ n-GaN interfaces. As regards this Comment, we point out the fundamental errors of this interpretation. In addition, we find that the results shown in Figs. 3-6 of Mohammad's paper are incorrect because the lower effective barrier height (BH) of less than 0 eV (due to the induced BH reduction by image force lowering or band gap narrowing) and a variable (c1) were neglected by the author.

AB - The contact mechanism and design principles for alloyed Ohmic contacts to n-GaN were investigated in Mohammad's paper [J. Appl. Phys. 95, 7940 (2004)]. Mohammad's study demonstrated that both tunneling and thermionic emission were equally important for low resistivity at the metals/ n-GaN interfaces. As regards this Comment, we point out the fundamental errors of this interpretation. In addition, we find that the results shown in Figs. 3-6 of Mohammad's paper are incorrect because the lower effective barrier height (BH) of less than 0 eV (due to the induced BH reduction by image force lowering or band gap narrowing) and a variable (c1) were neglected by the author.

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