Cleaved mirrors for nitride semiconductor lasers

Wei-Li Chen, Yi Cheng Chang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We demonstrate smooth cleaved gallium nitride facet mirrors on Si(111) substrates fabricated by a microcleaving technology. Cantilever features were defined by photolithography, followed by a vertical photo-enhanced electrochemical (PEC) etch until the substrate was exposed. Lateral undercuts underneath the cantilevers were created by a silicon isotropic wet etch, and the nitride cantilevers were isolated from the substrate completely. Mechanical forces were applied to break the cantilevers. The facets made by microcleaving showed improved roughness as confirmed by surface morphology characterization. The fabrication steps for microcleaved facets combined with laser processing on a full-wafer scale are proposed.

Original languageEnglish
Pages (from-to)1064-1069
Number of pages6
JournalJournal of Electronic Materials
Volume37
Issue number8
DOIs
Publication statusPublished - 2008 Aug 1

Fingerprint

Nitrides
nitrides
Semiconductor lasers
flat surfaces
semiconductor lasers
mirrors
Substrates
Gallium nitride
gallium nitrides
Photolithography
Silicon
photolithography
Surface morphology
roughness
Surface roughness
wafers
Fabrication
fabrication
Lasers
silicon

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Chen, Wei-Li ; Chang, Yi Cheng. / Cleaved mirrors for nitride semiconductor lasers. In: Journal of Electronic Materials. 2008 ; Vol. 37, No. 8. pp. 1064-1069.
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Cleaved mirrors for nitride semiconductor lasers. / Chen, Wei-Li; Chang, Yi Cheng.

In: Journal of Electronic Materials, Vol. 37, No. 8, 01.08.2008, p. 1064-1069.

Research output: Contribution to journalArticle

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