Characterization of InN epilayers grown on Si(1 1 1) substrates at various temperatures by MBE

Yan Hsin Wang, Wei Li Chen, Ming Fei Chen

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

InN films have been grown by plasma-assisted molecular beam epitaxy (PAMBE) and characterized by various technologies. It was found that the structural, optical and electrical properties can be drastically improved by raising growth temperature from 440 to 525 °C. Grainy morphology was found in the grain size was found in atomic force microscope images. The large grain size was about 360 nm for a film grown at 525 °C. These films exhibited Wurtzite structure with a c/a ratio ranging from 1.59 to 1.609. The dislocation densities estimated by X-ray diffraction techniques closely agreed with those analyzed by plan-view transmission electron microscopy. Photoluminescence (PL) studies confirmed near band-to-band transitions and the narrowest low-temperature PL peak width was found to be 24 meV at 0.666 eV. Carrier concentrations decreased from 1.44×1019 to 1.66×1018 cm-3 and Hall mobility increased from 226 to 946 cm2 V-1 s-1 as the growth temperature is progressively increased from 440 to 525 °C. Raman spectra also indicated improved crystal quality as the growth temperature was raised.

Original languageEnglish
Pages (from-to)1746-1751
Number of pages6
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume41
Issue number10
DOIs
Publication statusPublished - 2009 Oct 1

Fingerprint

Epilayers
Growth temperature
Molecular beam epitaxy
Photoluminescence
Substrates
grain size
photoluminescence
Hall mobility
wurtzite
Temperature
Carrier concentration
temperature
Raman scattering
Structural properties
Electric properties
Microscopes
molecular beam epitaxy
Optical properties
electrical properties
microscopes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Cite this

@article{1c746ba7eac64fcb81ce9f21637948dc,
title = "Characterization of InN epilayers grown on Si(1 1 1) substrates at various temperatures by MBE",
abstract = "InN films have been grown by plasma-assisted molecular beam epitaxy (PAMBE) and characterized by various technologies. It was found that the structural, optical and electrical properties can be drastically improved by raising growth temperature from 440 to 525 °C. Grainy morphology was found in the grain size was found in atomic force microscope images. The large grain size was about 360 nm for a film grown at 525 °C. These films exhibited Wurtzite structure with a c/a ratio ranging from 1.59 to 1.609. The dislocation densities estimated by X-ray diffraction techniques closely agreed with those analyzed by plan-view transmission electron microscopy. Photoluminescence (PL) studies confirmed near band-to-band transitions and the narrowest low-temperature PL peak width was found to be 24 meV at 0.666 eV. Carrier concentrations decreased from 1.44×1019 to 1.66×1018 cm-3 and Hall mobility increased from 226 to 946 cm2 V-1 s-1 as the growth temperature is progressively increased from 440 to 525 °C. Raman spectra also indicated improved crystal quality as the growth temperature was raised.",
author = "Wang, {Yan Hsin} and Chen, {Wei Li} and Chen, {Ming Fei}",
year = "2009",
month = "10",
day = "1",
doi = "10.1016/j.physe.2009.06.005",
language = "English",
volume = "41",
pages = "1746--1751",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "10",

}

Characterization of InN epilayers grown on Si(1 1 1) substrates at various temperatures by MBE. / Wang, Yan Hsin; Chen, Wei Li; Chen, Ming Fei.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 41, No. 10, 01.10.2009, p. 1746-1751.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Characterization of InN epilayers grown on Si(1 1 1) substrates at various temperatures by MBE

AU - Wang, Yan Hsin

AU - Chen, Wei Li

AU - Chen, Ming Fei

PY - 2009/10/1

Y1 - 2009/10/1

N2 - InN films have been grown by plasma-assisted molecular beam epitaxy (PAMBE) and characterized by various technologies. It was found that the structural, optical and electrical properties can be drastically improved by raising growth temperature from 440 to 525 °C. Grainy morphology was found in the grain size was found in atomic force microscope images. The large grain size was about 360 nm for a film grown at 525 °C. These films exhibited Wurtzite structure with a c/a ratio ranging from 1.59 to 1.609. The dislocation densities estimated by X-ray diffraction techniques closely agreed with those analyzed by plan-view transmission electron microscopy. Photoluminescence (PL) studies confirmed near band-to-band transitions and the narrowest low-temperature PL peak width was found to be 24 meV at 0.666 eV. Carrier concentrations decreased from 1.44×1019 to 1.66×1018 cm-3 and Hall mobility increased from 226 to 946 cm2 V-1 s-1 as the growth temperature is progressively increased from 440 to 525 °C. Raman spectra also indicated improved crystal quality as the growth temperature was raised.

AB - InN films have been grown by plasma-assisted molecular beam epitaxy (PAMBE) and characterized by various technologies. It was found that the structural, optical and electrical properties can be drastically improved by raising growth temperature from 440 to 525 °C. Grainy morphology was found in the grain size was found in atomic force microscope images. The large grain size was about 360 nm for a film grown at 525 °C. These films exhibited Wurtzite structure with a c/a ratio ranging from 1.59 to 1.609. The dislocation densities estimated by X-ray diffraction techniques closely agreed with those analyzed by plan-view transmission electron microscopy. Photoluminescence (PL) studies confirmed near band-to-band transitions and the narrowest low-temperature PL peak width was found to be 24 meV at 0.666 eV. Carrier concentrations decreased from 1.44×1019 to 1.66×1018 cm-3 and Hall mobility increased from 226 to 946 cm2 V-1 s-1 as the growth temperature is progressively increased from 440 to 525 °C. Raman spectra also indicated improved crystal quality as the growth temperature was raised.

UR - http://www.scopus.com/inward/record.url?scp=70249149973&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70249149973&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2009.06.005

DO - 10.1016/j.physe.2009.06.005

M3 - Article

AN - SCOPUS:70249149973

VL - 41

SP - 1746

EP - 1751

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 10

ER -