Characterization of improved algaas/gaas resonant tunneling heterostructure bipolar transistors

Jenq Shinn Wu, Chun Yen Chang, Chien Ping Lee, Kou Hsiung Chang, Don Gey Liu, Der Cherng Liou

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We report on the fabrication of AlGaAs/GaAs resonant tunneling heterostructure bipolar transistors (RTHBT’s). The devices exhibit a current peak in the transfer characteristics, with peak-to-valley current ratios of 1.7 and 9 at 300 K and 77 K, respectively. The common-emitter small signal current gains at 300 K and 77 K reach 40 and 28, respectively. They are the best results to date for AlGaAs/GaAs resonant tunneling transistors. Because the double barriers are placed in the emitter and far from the emitter-base interface, and the heterostructure emitter suppresses the hole injection from the base to the emitter, the occurrence of the negative differential resistance (NDR) in the device characteristics is governed by the emitter current but not by the base current. The operation mechanism of the NDR behavior in the common-emitter output characteristics is discussed.

Original languageEnglish
Pages (from-to)L160-L162
JournalJapanese Journal of Applied Physics
Volume30
Issue number2
DOIs
Publication statusPublished - 1991 Feb

Fingerprint

Resonant tunneling
Bipolar transistors
resonant tunneling
bipolar transistors
aluminum gallium arsenides
Heterojunctions
emitters
Transistors
Fabrication
valleys
transistors
occurrences
injection
fabrication
output

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Wu, Jenq Shinn ; Chang, Chun Yen ; Lee, Chien Ping ; Chang, Kou Hsiung ; Liu, Don Gey ; Liou, Der Cherng. / Characterization of improved algaas/gaas resonant tunneling heterostructure bipolar transistors. In: Japanese Journal of Applied Physics. 1991 ; Vol. 30, No. 2. pp. L160-L162.
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abstract = "We report on the fabrication of AlGaAs/GaAs resonant tunneling heterostructure bipolar transistors (RTHBT’s). The devices exhibit a current peak in the transfer characteristics, with peak-to-valley current ratios of 1.7 and 9 at 300 K and 77 K, respectively. The common-emitter small signal current gains at 300 K and 77 K reach 40 and 28, respectively. They are the best results to date for AlGaAs/GaAs resonant tunneling transistors. Because the double barriers are placed in the emitter and far from the emitter-base interface, and the heterostructure emitter suppresses the hole injection from the base to the emitter, the occurrence of the negative differential resistance (NDR) in the device characteristics is governed by the emitter current but not by the base current. The operation mechanism of the NDR behavior in the common-emitter output characteristics is discussed.",
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Characterization of improved algaas/gaas resonant tunneling heterostructure bipolar transistors. / Wu, Jenq Shinn; Chang, Chun Yen; Lee, Chien Ping; Chang, Kou Hsiung; Liu, Don Gey; Liou, Der Cherng.

In: Japanese Journal of Applied Physics, Vol. 30, No. 2, 02.1991, p. L160-L162.

Research output: Contribution to journalArticle

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