Abstract
Low-temperature electronic and thermal transport measurements are carried out on nanostructured Zn1-xAlxTe (0 ≤ x ≤ 0.15) fabricated using hydrothermal synthesis followed by evacuated-and-encapsulated sintering. A single parabolic band with acoustic phonon scattering is used to analyze thermoelectric transport data. It is found that reduced Fermi energy gets closer to the valence band edge and density of states effective mass, effective density of states, and Hall factor decrease with increasing x in doped samples. The chemical carrier concentration, carrier density independent mobility, β, and theoretical zT values increase with increasing x in doped samples. The nanostructured Zn1-xAlxTe exhibits significant reduction of thermal conductivity at 300 K (1.82-3.71 W m-1 K-1) as compared to bulk ZnTe (18 W m-1 K-1). The point-defect scattering and phonon-grain scattering play an important role in reducing the lattice thermal conductivity. In addition, partial substitution of Al3+ for Zn2+ significantly improves both the power factor and zT values.
| Original language | English |
|---|---|
| Article number | 455503 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 50 |
| Issue number | 45 |
| DOIs | |
| Publication status | Published - 2017 Oct 23 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films
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Characterization and analysis of thermoelectric transport using SPB model in nanostructured aluminum doped zinc tellurium. / Bhaskar, Ankam; Pai, Yi Hsuan; Liu, Chia Jyi.
In: Journal of Physics D: Applied Physics, Vol. 50, No. 45, 455503, 23.10.2017.Research output: Contribution to journal › Article
TY - JOUR
T1 - Characterization and analysis of thermoelectric transport using SPB model in nanostructured aluminum doped zinc tellurium
AU - Bhaskar, Ankam
AU - Pai, Yi Hsuan
AU - Liu, Chia Jyi
PY - 2017/10/23
Y1 - 2017/10/23
N2 - Low-temperature electronic and thermal transport measurements are carried out on nanostructured Zn1-xAlxTe (0 ≤ x ≤ 0.15) fabricated using hydrothermal synthesis followed by evacuated-and-encapsulated sintering. A single parabolic band with acoustic phonon scattering is used to analyze thermoelectric transport data. It is found that reduced Fermi energy gets closer to the valence band edge and density of states effective mass, effective density of states, and Hall factor decrease with increasing x in doped samples. The chemical carrier concentration, carrier density independent mobility, β, and theoretical zT values increase with increasing x in doped samples. The nanostructured Zn1-xAlxTe exhibits significant reduction of thermal conductivity at 300 K (1.82-3.71 W m-1 K-1) as compared to bulk ZnTe (18 W m-1 K-1). The point-defect scattering and phonon-grain scattering play an important role in reducing the lattice thermal conductivity. In addition, partial substitution of Al3+ for Zn2+ significantly improves both the power factor and zT values.
AB - Low-temperature electronic and thermal transport measurements are carried out on nanostructured Zn1-xAlxTe (0 ≤ x ≤ 0.15) fabricated using hydrothermal synthesis followed by evacuated-and-encapsulated sintering. A single parabolic band with acoustic phonon scattering is used to analyze thermoelectric transport data. It is found that reduced Fermi energy gets closer to the valence band edge and density of states effective mass, effective density of states, and Hall factor decrease with increasing x in doped samples. The chemical carrier concentration, carrier density independent mobility, β, and theoretical zT values increase with increasing x in doped samples. The nanostructured Zn1-xAlxTe exhibits significant reduction of thermal conductivity at 300 K (1.82-3.71 W m-1 K-1) as compared to bulk ZnTe (18 W m-1 K-1). The point-defect scattering and phonon-grain scattering play an important role in reducing the lattice thermal conductivity. In addition, partial substitution of Al3+ for Zn2+ significantly improves both the power factor and zT values.
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U2 - 10.1088/1361-6463/aa8d40
DO - 10.1088/1361-6463/aa8d40
M3 - Article
AN - SCOPUS:85032745185
VL - 50
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
SN - 0022-3727
IS - 45
M1 - 455503
ER -