Highly c-axis-oriented zinc oxide (ZnO) thin films were deposited on Au electrodes by reactive radio frequency (RF) magnetron sputtering and their sputtering pressure on thin film bulk acoustic-wave resonator (FBAR) characteristics are presented. The evolution of the preferred orientation and the surface morphologies of the deposited ZnO films are investigated using X-ray diffraction, scanning electron microscopy, and atomic force microscopy measurement techniques. The result obtained in this study show that the ZnO films prepared using a lower sputtering pressure of 2∈×∈10 -3 Torr have a strong c-axis orientation, promote smoother surface and higher resonance frequency. The experimental results demonstrate that the fabricated two-port FBAR using the optimum process parameters yields an effective electromechanical coupling constant ( k2eff) of 2.8%, series quality factor (Q s) of 436, and a parallel quality factor (Q p) of 600.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Mechanics of Materials
- Electrical and Electronic Engineering
- Materials Chemistry