Characteristics of ZnO thin film for film bulk acoustic-wave resonators

Kok Wan Tay, Po Hsun Sung, Yi-Cheng or Y. C. Lin, Tsung Jui Hung

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Highly c-axis-oriented zinc oxide (ZnO) thin films were deposited on Au electrodes by reactive radio frequency (RF) magnetron sputtering and their sputtering pressure on thin film bulk acoustic-wave resonator (FBAR) characteristics are presented. The evolution of the preferred orientation and the surface morphologies of the deposited ZnO films are investigated using X-ray diffraction, scanning electron microscopy, and atomic force microscopy measurement techniques. The result obtained in this study show that the ZnO films prepared using a lower sputtering pressure of 2∈×∈10 -3 Torr have a strong c-axis orientation, promote smoother surface and higher resonance frequency. The experimental results demonstrate that the fabricated two-port FBAR using the optimum process parameters yields an effective electromechanical coupling constant ( k2eff) of 2.8%, series quality factor (Q s) of 436, and a parallel quality factor (Q p) of 600.

Original languageEnglish
Pages (from-to)178-183
Number of pages6
JournalJournal of Electroceramics
Volume21
Issue number1-4 SPEC. ISS.
DOIs
Publication statusPublished - 2008 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Mechanics of Materials
  • Electrical and Electronic Engineering
  • Materials Chemistry

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