Characteristics of ZnO thin film for film bulk acoustic-wave resonators

Kok Wan Tay, Po Hsun Sung, Yi-Cheng or Y. C. Lin, Tsung Jui Hung

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Highly c-axis-oriented zinc oxide (ZnO) thin films were deposited on Au electrodes by reactive radio frequency (RF) magnetron sputtering and their sputtering pressure on thin film bulk acoustic-wave resonator (FBAR) characteristics are presented. The evolution of the preferred orientation and the surface morphologies of the deposited ZnO films are investigated using X-ray diffraction, scanning electron microscopy, and atomic force microscopy measurement techniques. The result obtained in this study show that the ZnO films prepared using a lower sputtering pressure of 2∈×∈10 -3 Torr have a strong c-axis orientation, promote smoother surface and higher resonance frequency. The experimental results demonstrate that the fabricated two-port FBAR using the optimum process parameters yields an effective electromechanical coupling constant ( k2eff) of 2.8%, series quality factor (Q s) of 436, and a parallel quality factor (Q p) of 600.

Original languageEnglish
Pages (from-to)178-183
Number of pages6
JournalJournal of Electroceramics
Volume21
Issue number1-4 SPEC. ISS.
DOIs
Publication statusPublished - 2008 Dec 1

Fingerprint

Zinc Oxide
Zinc oxide
zinc oxides
Oxide films
Resonators
resonators
Acoustic waves
Thin films
Sputtering
acoustics
oxide films
Q factors
thin films
sputtering
Electromechanical coupling
Magnetron sputtering
Surface morphology
Atomic force microscopy
radio frequencies
magnetron sputtering

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Mechanics of Materials
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Tay, Kok Wan ; Sung, Po Hsun ; Lin, Yi-Cheng or Y. C. ; Hung, Tsung Jui. / Characteristics of ZnO thin film for film bulk acoustic-wave resonators. In: Journal of Electroceramics. 2008 ; Vol. 21, No. 1-4 SPEC. ISS. pp. 178-183.
@article{4d41c2aa99024d8da86c7624e18842be,
title = "Characteristics of ZnO thin film for film bulk acoustic-wave resonators",
abstract = "Highly c-axis-oriented zinc oxide (ZnO) thin films were deposited on Au electrodes by reactive radio frequency (RF) magnetron sputtering and their sputtering pressure on thin film bulk acoustic-wave resonator (FBAR) characteristics are presented. The evolution of the preferred orientation and the surface morphologies of the deposited ZnO films are investigated using X-ray diffraction, scanning electron microscopy, and atomic force microscopy measurement techniques. The result obtained in this study show that the ZnO films prepared using a lower sputtering pressure of 2∈×∈10 -3 Torr have a strong c-axis orientation, promote smoother surface and higher resonance frequency. The experimental results demonstrate that the fabricated two-port FBAR using the optimum process parameters yields an effective electromechanical coupling constant ( k2eff) of 2.8{\%}, series quality factor (Q s) of 436, and a parallel quality factor (Q p) of 600.",
author = "Tay, {Kok Wan} and Sung, {Po Hsun} and Lin, {Yi-Cheng or Y. C.} and Hung, {Tsung Jui}",
year = "2008",
month = "12",
day = "1",
doi = "10.1007/s10832-007-9108-4",
language = "English",
volume = "21",
pages = "178--183",
journal = "Journal of Electroceramics",
issn = "1385-3449",
publisher = "Springer Netherlands",
number = "1-4 SPEC. ISS.",

}

Characteristics of ZnO thin film for film bulk acoustic-wave resonators. / Tay, Kok Wan; Sung, Po Hsun; Lin, Yi-Cheng or Y. C.; Hung, Tsung Jui.

In: Journal of Electroceramics, Vol. 21, No. 1-4 SPEC. ISS., 01.12.2008, p. 178-183.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Characteristics of ZnO thin film for film bulk acoustic-wave resonators

AU - Tay, Kok Wan

AU - Sung, Po Hsun

AU - Lin, Yi-Cheng or Y. C.

AU - Hung, Tsung Jui

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Highly c-axis-oriented zinc oxide (ZnO) thin films were deposited on Au electrodes by reactive radio frequency (RF) magnetron sputtering and their sputtering pressure on thin film bulk acoustic-wave resonator (FBAR) characteristics are presented. The evolution of the preferred orientation and the surface morphologies of the deposited ZnO films are investigated using X-ray diffraction, scanning electron microscopy, and atomic force microscopy measurement techniques. The result obtained in this study show that the ZnO films prepared using a lower sputtering pressure of 2∈×∈10 -3 Torr have a strong c-axis orientation, promote smoother surface and higher resonance frequency. The experimental results demonstrate that the fabricated two-port FBAR using the optimum process parameters yields an effective electromechanical coupling constant ( k2eff) of 2.8%, series quality factor (Q s) of 436, and a parallel quality factor (Q p) of 600.

AB - Highly c-axis-oriented zinc oxide (ZnO) thin films were deposited on Au electrodes by reactive radio frequency (RF) magnetron sputtering and their sputtering pressure on thin film bulk acoustic-wave resonator (FBAR) characteristics are presented. The evolution of the preferred orientation and the surface morphologies of the deposited ZnO films are investigated using X-ray diffraction, scanning electron microscopy, and atomic force microscopy measurement techniques. The result obtained in this study show that the ZnO films prepared using a lower sputtering pressure of 2∈×∈10 -3 Torr have a strong c-axis orientation, promote smoother surface and higher resonance frequency. The experimental results demonstrate that the fabricated two-port FBAR using the optimum process parameters yields an effective electromechanical coupling constant ( k2eff) of 2.8%, series quality factor (Q s) of 436, and a parallel quality factor (Q p) of 600.

UR - http://www.scopus.com/inward/record.url?scp=67651115904&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67651115904&partnerID=8YFLogxK

U2 - 10.1007/s10832-007-9108-4

DO - 10.1007/s10832-007-9108-4

M3 - Article

AN - SCOPUS:67651115904

VL - 21

SP - 178

EP - 183

JO - Journal of Electroceramics

JF - Journal of Electroceramics

SN - 1385-3449

IS - 1-4 SPEC. ISS.

ER -