@inproceedings{9368f01e448948b485687fc2dbde12fc,
title = "Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology",
abstract = "Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.",
author = "Ling, {Shin Chun} and Wang, {Te Chung} and Tsung-Shine Ko and Lu, {Tien Chang} and Kuo, {Hao Chung} and Wang, {Shing Chung}",
year = "2007",
month = dec,
day = "1",
doi = "10.1109/CLEOPR.2007.4391727",
language = "English",
isbn = "1424411734",
series = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest",
booktitle = "2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM",
note = "2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM ; Conference date: 26-08-2007 Through 31-08-2007",
}