Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology

Shin Chun Ling, Te Chung Wang, Tsung-Shine Ko, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.

Original languageEnglish
Title of host publication2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM
DOIs
Publication statusPublished - 2007 Dec 1
Event2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM - Seoul, Korea, Republic of
Duration: 2007 Aug 262007 Aug 31

Publication series

NamePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Other

Other2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM
CountryKorea, Republic of
CitySeoul
Period07-08-2607-08-31

Fingerprint

Light emitting diodes
light emitting diodes
Indium
Defect density
Metallorganic chemical vapor deposition
Electroluminescence
Coalescence
Polarization
electroluminescence
wings
coalescing
metalorganic chemical vapor deposition
indium
templates
injection
defects
polarization

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Ling, S. C., Wang, T. C., Ko, T-S., Lu, T. C., Kuo, H. C., & Wang, S. C. (2007). Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology. In 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM [4391727] (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). https://doi.org/10.1109/CLEOPR.2007.4391727
Ling, Shin Chun ; Wang, Te Chung ; Ko, Tsung-Shine ; Lu, Tien Chang ; Kuo, Hao Chung ; Wang, Shing Chung. / Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology. 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM. 2007. (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest).
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title = "Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology",
abstract = "Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7{\%}.",
author = "Ling, {Shin Chun} and Wang, {Te Chung} and Tsung-Shine Ko and Lu, {Tien Chang} and Kuo, {Hao Chung} and Wang, {Shing Chung}",
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language = "English",
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Ling, SC, Wang, TC, Ko, T-S, Lu, TC, Kuo, HC & Wang, SC 2007, Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology. in 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM., 4391727, Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM, Seoul, Korea, Republic of, 07-08-26. https://doi.org/10.1109/CLEOPR.2007.4391727

Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology. / Ling, Shin Chun; Wang, Te Chung; Ko, Tsung-Shine; Lu, Tien Chang; Kuo, Hao Chung; Wang, Shing Chung.

2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM. 2007. 4391727 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Ling, Shin Chun

AU - Wang, Te Chung

AU - Ko, Tsung-Shine

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AU - Kuo, Hao Chung

AU - Wang, Shing Chung

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N2 - Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.

AB - Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.

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BT - 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM

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Ling SC, Wang TC, Ko T-S, Lu TC, Kuo HC, Wang SC. Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology. In 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM. 2007. 4391727. (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). https://doi.org/10.1109/CLEOPR.2007.4391727