Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology

Shin Chun Ling; Te Chung Wang; Tsung-Shine Ko; Tien Chang Lu; Hao Chung Kuo; Shing Chung Wang

doi:10.1109/CLEOPR.2007.4391727

Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology

Shin Chun Ling, Te Chung Wang, Tsung-Shine Ko, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.

Original language	English
Title of host publication	2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM
DOIs	https://doi.org/10.1109/CLEOPR.2007.4391727
Publication status	Published - 2007 Dec 1
Event	2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM - Seoul, Korea, Republic of Duration: 2007 Aug 26 → 2007 Aug 31

Publication series

Name	Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Other

Other	2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM
Country	Korea, Republic of
City	Seoul
Period	07-08-26 → 07-08-31

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

Ling, S. C., Wang, T. C., Ko, T-S., Lu, T. C., Kuo, H. C., & Wang, S. C. (2007). Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology. In 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM [4391727] (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). https://doi.org/10.1109/CLEOPR.2007.4391727

Ling, Shin Chun ; Wang, Te Chung ; Ko, Tsung-Shine ; Lu, Tien Chang ; Kuo, Hao Chung ; Wang, Shing Chung. / Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology. 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM. 2007. (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest).

@inproceedings{9368f01e448948b485687fc2dbde12fc,

title = "Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology",

abstract = "Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7{\%}.",

author = "Ling, {Shin Chun} and Wang, {Te Chung} and Tsung-Shine Ko and Lu, {Tien Chang} and Kuo, {Hao Chung} and Wang, {Shing Chung}",

year = "2007",

month = "12",

day = "1",

doi = "10.1109/CLEOPR.2007.4391727",

language = "English",

isbn = "1424411734",

series = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest",

booktitle = "2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM",

note = "2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM ; Conference date: 26-08-2007 Through 31-08-2007",

}

Ling, SC, Wang, TC, Ko, T-S, Lu, TC, Kuo, HC & Wang, SC 2007, Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology. in 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM., 4391727, Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM, Seoul, Korea, Republic of, 07-08-26. https://doi.org/10.1109/CLEOPR.2007.4391727

Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology. / Ling, Shin Chun; Wang, Te Chung; Ko, Tsung-Shine; Lu, Tien Chang; Kuo, Hao Chung; Wang, Shing Chung.

2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM. 2007. 4391727 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology

AU - Ling, Shin Chun

AU - Wang, Te Chung

AU - Ko, Tsung-Shine

AU - Lu, Tien Chang

AU - Kuo, Hao Chung

AU - Wang, Shing Chung

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.

AB - Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.

UR - http://www.scopus.com/inward/record.url?scp=51249090547&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51249090547&partnerID=8YFLogxK

U2 - 10.1109/CLEOPR.2007.4391727

DO - 10.1109/CLEOPR.2007.4391727

M3 - Conference contribution

AN - SCOPUS:51249090547

SN - 1424411734

SN - 9781424411733

T3 - Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

BT - 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM

T2 - 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM

Y2 - 26 August 2007 through 31 August 2007

ER -

Ling SC, Wang TC, Ko T-S, Lu TC, Kuo HC, Wang SC. Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology. In 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM. 2007. 4391727. (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). https://doi.org/10.1109/CLEOPR.2007.4391727

Access to Document

10.1109/CLEOPR.2007.4391727