Abstract
Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.
| Original language | English |
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| Title of host publication | 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM |
| DOIs | |
| Publication status | Published - 2007 Dec 1 |
| Event | 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM - Seoul, Korea, Republic of Duration: 2007 Aug 26 → 2007 Aug 31 |
Publication series
| Name | Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest |
|---|
Other
| Other | 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM |
|---|---|
| Country | Korea, Republic of |
| City | Seoul |
| Period | 07-08-26 → 07-08-31 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
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Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology. / Ling, Shin Chun; Wang, Te Chung; Ko, Tsung-Shine; Lu, Tien Chang; Kuo, Hao Chung; Wang, Shing Chung.
2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM. 2007. 4391727 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology
AU - Ling, Shin Chun
AU - Wang, Te Chung
AU - Ko, Tsung-Shine
AU - Lu, Tien Chang
AU - Kuo, Hao Chung
AU - Wang, Shing Chung
PY - 2007/12/1
Y1 - 2007/12/1
N2 - Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.
AB - Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.
UR - http://www.scopus.com/inward/record.url?scp=51249090547&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=51249090547&partnerID=8YFLogxK
U2 - 10.1109/CLEOPR.2007.4391727
DO - 10.1109/CLEOPR.2007.4391727
M3 - Conference contribution
AN - SCOPUS:51249090547
SN - 1424411734
SN - 9781424411733
T3 - Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
BT - 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM
ER -