Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology

Shin Chun Ling; Te Chung Wang; Tsung-Shine Ko; Tien Chang Lu; Hao Chung Kuo; Shing Chung Wang

doi:10.1109/CLEOPR.2007.4391727

Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology

Shin Chun Ling, Te Chung Wang, Tsung-Shine Ko, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.

Original language	English
Title of host publication	2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM
DOIs	https://doi.org/10.1109/CLEOPR.2007.4391727
Publication status	Published - 2007 Dec 1
Event	2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM - Seoul, Korea, Republic of Duration: 2007 Aug 26 → 2007 Aug 31

Publication series

Name	Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Other

Other	2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM
Country	Korea, Republic of
City	Seoul
Period	07-08-26 → 07-08-31

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

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Ling, S. C., Wang, T. C., Ko, T-S., Lu, T. C., Kuo, H. C., & Wang, S. C. (2007). Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology. In 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM [4391727] (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). https://doi.org/10.1109/CLEOPR.2007.4391727

Ling, Shin Chun ; Wang, Te Chung ; Ko, Tsung-Shine ; Lu, Tien Chang ; Kuo, Hao Chung ; Wang, Shing Chung. / Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology. 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM. 2007. (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest).

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title = "Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology",

abstract = "Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.",

author = "Ling, {Shin Chun} and Wang, {Te Chung} and Tsung-Shine Ko and Lu, {Tien Chang} and Kuo, {Hao Chung} and Wang, {Shing Chung}",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/CLEOPR.2007.4391727",

language = "English",

isbn = "1424411734",

series = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest",

booktitle = "2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM",

note = "2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM ; Conference date: 26-08-2007 Through 31-08-2007",

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Ling, SC, Wang, TC, Ko, T-S, Lu, TC, Kuo, HC & Wang, SC 2007, Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology. in 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM., 4391727, Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM, Seoul, Korea, Republic of, 07-08-26. https://doi.org/10.1109/CLEOPR.2007.4391727

Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology. / Ling, Shin Chun; Wang, Te Chung; Ko, Tsung-Shine; Lu, Tien Chang; Kuo, Hao Chung; Wang, Shing Chung.

2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM. 2007. 4391727 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology

AU - Ling, Shin Chun

AU - Wang, Te Chung

AU - Ko, Tsung-Shine

AU - Lu, Tien Chang

AU - Kuo, Hao Chung

AU - Wang, Shing Chung

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.

AB - Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.

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Ling SC, Wang TC, Ko T-S, Lu TC, Kuo HC, Wang SC. Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology. In 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM. 2007. 4391727. (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). https://doi.org/10.1109/CLEOPR.2007.4391727