Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology

Shih Chun Ling, Te Chung Wang, Tsung-Shine Ko, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Ultraviolet nonpolar InGaN/GaN light-emitting diodes grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition were fabricated. Two emission peaks at 373 and 443 nm are observed from each fabricated device. The double emission peaks feature is identified by cathodoluminescence images, which show that the ultraviolet peak is emitted from the low-defect density wings on the TELOG and the blue peak is emitted from the TELOG-coalesced seed areas due to different incorporation of indium. The L-I-V diagram revealed that there are leakage current pathways due to the many threading dislocations in seed regions, and that the output power reached 0.2 mW at 140 mA. Two electroluminescence (EL) peaks are observed simultaneously when the driving current is below 50 mA. However, the EL peak at 373 nm dominates when current is above 50 mA. In addition, the degree of polarization of the ultraviolet peak was measured and found to be 28.7%.

Original languageEnglish
Pages (from-to)2330-2333
Number of pages4
JournalJournal of Crystal Growth
Volume310
Issue number7-9
DOIs
Publication statusPublished - 2008 Apr 1

Fingerprint

Electroluminescence
Light emitting diodes
Seed
light emitting diodes
Indium
Cathodoluminescence
Defect density
Metallorganic chemical vapor deposition
Leakage currents
Polarization
electroluminescence
seeds
cathodoluminescence
wings
metalorganic chemical vapor deposition
indium
leakage
templates
diagrams
output

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Ling, Shih Chun ; Wang, Te Chung ; Ko, Tsung-Shine ; Lu, Tien Chang ; Kuo, Hao Chung ; Wang, Shing Chung. / Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology. In: Journal of Crystal Growth. 2008 ; Vol. 310, No. 7-9. pp. 2330-2333.
@article{9b4cac3248644a1b837c45f161abf617,
title = "Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology",
abstract = "Ultraviolet nonpolar InGaN/GaN light-emitting diodes grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition were fabricated. Two emission peaks at 373 and 443 nm are observed from each fabricated device. The double emission peaks feature is identified by cathodoluminescence images, which show that the ultraviolet peak is emitted from the low-defect density wings on the TELOG and the blue peak is emitted from the TELOG-coalesced seed areas due to different incorporation of indium. The L-I-V diagram revealed that there are leakage current pathways due to the many threading dislocations in seed regions, and that the output power reached 0.2 mW at 140 mA. Two electroluminescence (EL) peaks are observed simultaneously when the driving current is below 50 mA. However, the EL peak at 373 nm dominates when current is above 50 mA. In addition, the degree of polarization of the ultraviolet peak was measured and found to be 28.7{\%}.",
author = "Ling, {Shih Chun} and Wang, {Te Chung} and Tsung-Shine Ko and Lu, {Tien Chang} and Kuo, {Hao Chung} and Wang, {Shing Chung}",
year = "2008",
month = "4",
day = "1",
doi = "10.1016/j.jcrysgro.2007.12.013",
language = "English",
volume = "310",
pages = "2330--2333",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "7-9",

}

Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology. / Ling, Shih Chun; Wang, Te Chung; Ko, Tsung-Shine; Lu, Tien Chang; Kuo, Hao Chung; Wang, Shing Chung.

In: Journal of Crystal Growth, Vol. 310, No. 7-9, 01.04.2008, p. 2330-2333.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology

AU - Ling, Shih Chun

AU - Wang, Te Chung

AU - Ko, Tsung-Shine

AU - Lu, Tien Chang

AU - Kuo, Hao Chung

AU - Wang, Shing Chung

PY - 2008/4/1

Y1 - 2008/4/1

N2 - Ultraviolet nonpolar InGaN/GaN light-emitting diodes grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition were fabricated. Two emission peaks at 373 and 443 nm are observed from each fabricated device. The double emission peaks feature is identified by cathodoluminescence images, which show that the ultraviolet peak is emitted from the low-defect density wings on the TELOG and the blue peak is emitted from the TELOG-coalesced seed areas due to different incorporation of indium. The L-I-V diagram revealed that there are leakage current pathways due to the many threading dislocations in seed regions, and that the output power reached 0.2 mW at 140 mA. Two electroluminescence (EL) peaks are observed simultaneously when the driving current is below 50 mA. However, the EL peak at 373 nm dominates when current is above 50 mA. In addition, the degree of polarization of the ultraviolet peak was measured and found to be 28.7%.

AB - Ultraviolet nonpolar InGaN/GaN light-emitting diodes grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition were fabricated. Two emission peaks at 373 and 443 nm are observed from each fabricated device. The double emission peaks feature is identified by cathodoluminescence images, which show that the ultraviolet peak is emitted from the low-defect density wings on the TELOG and the blue peak is emitted from the TELOG-coalesced seed areas due to different incorporation of indium. The L-I-V diagram revealed that there are leakage current pathways due to the many threading dislocations in seed regions, and that the output power reached 0.2 mW at 140 mA. Two electroluminescence (EL) peaks are observed simultaneously when the driving current is below 50 mA. However, the EL peak at 373 nm dominates when current is above 50 mA. In addition, the degree of polarization of the ultraviolet peak was measured and found to be 28.7%.

UR - http://www.scopus.com/inward/record.url?scp=41449107851&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41449107851&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2007.12.013

DO - 10.1016/j.jcrysgro.2007.12.013

M3 - Article

AN - SCOPUS:41449107851

VL - 310

SP - 2330

EP - 2333

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 7-9

ER -