Characteristics of ultraviolet nonpolar InGaN/GaN ligh-temitting diodes using trench epitaxial lateral overgrowth technology

Shih Chun Ling, Te Chung Wang, Tsung-Shine Ko, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
PublisherOptical Society of America
ISBN (Print)1424411742, 9781424411740
Publication statusPublished - 2007 Jan 1
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007 - Seoul, Korea, Republic of
Duration: 2007 Aug 262007 Aug 26

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
CountryKorea, Republic of
CitySeoul
Period07-08-2607-08-26

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All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Ling, S. C., Wang, T. C., Ko, T-S., Lu, T. C., Kuo, H. C., & Wang, S. C. (2007). Characteristics of ultraviolet nonpolar InGaN/GaN ligh-temitting diodes using trench epitaxial lateral overgrowth technology. In Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007 (Optics InfoBase Conference Papers). Optical Society of America.