Characteristics of ultraviolet nonpolar InGaN/GaN ligh-temitting diodes using trench epitaxial lateral overgrowth technology

Shih Chun Ling, Te Chung Wang, Tsung-Shine Ko, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
PublisherOptical Society of America
ISBN (Print)1424411742, 9781424411740
Publication statusPublished - 2007 Jan 1
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007 - Seoul, Korea, Republic of
Duration: 2007 Aug 262007 Aug 26

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
CountryKorea, Republic of
CitySeoul
Period07-08-2607-08-26

Fingerprint

Diodes
diodes
Defect density
Metallorganic chemical vapor deposition
Electroluminescence
Coalescence
Indium
Light emitting diodes
Polarization
electroluminescence
wings
coalescing
metalorganic chemical vapor deposition
indium
light emitting diodes
templates
injection
defects
polarization

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Ling, S. C., Wang, T. C., Ko, T-S., Lu, T. C., Kuo, H. C., & Wang, S. C. (2007). Characteristics of ultraviolet nonpolar InGaN/GaN ligh-temitting diodes using trench epitaxial lateral overgrowth technology. In Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007 (Optics InfoBase Conference Papers). Optical Society of America.
Ling, Shih Chun ; Wang, Te Chung ; Ko, Tsung-Shine ; Lu, Tien Chang ; Kuo, Hao Chung ; Wang, Shing Chung. / Characteristics of ultraviolet nonpolar InGaN/GaN ligh-temitting diodes using trench epitaxial lateral overgrowth technology. Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007. Optical Society of America, 2007. (Optics InfoBase Conference Papers).
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title = "Characteristics of ultraviolet nonpolar InGaN/GaN ligh-temitting diodes using trench epitaxial lateral overgrowth technology",
abstract = "Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7{\%}.",
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language = "English",
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Ling, SC, Wang, TC, Ko, T-S, Lu, TC, Kuo, HC & Wang, SC 2007, Characteristics of ultraviolet nonpolar InGaN/GaN ligh-temitting diodes using trench epitaxial lateral overgrowth technology. in Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007. Optics InfoBase Conference Papers, Optical Society of America, Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007, Seoul, Korea, Republic of, 07-08-26.

Characteristics of ultraviolet nonpolar InGaN/GaN ligh-temitting diodes using trench epitaxial lateral overgrowth technology. / Ling, Shih Chun; Wang, Te Chung; Ko, Tsung-Shine; Lu, Tien Chang; Kuo, Hao Chung; Wang, Shing Chung.

Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007. Optical Society of America, 2007. (Optics InfoBase Conference Papers).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Characteristics of ultraviolet nonpolar InGaN/GaN ligh-temitting diodes using trench epitaxial lateral overgrowth technology

AU - Ling, Shih Chun

AU - Wang, Te Chung

AU - Ko, Tsung-Shine

AU - Lu, Tien Chang

AU - Kuo, Hao Chung

AU - Wang, Shing Chung

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N2 - Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.

AB - Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.

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Ling SC, Wang TC, Ko T-S, Lu TC, Kuo HC, Wang SC. Characteristics of ultraviolet nonpolar InGaN/GaN ligh-temitting diodes using trench epitaxial lateral overgrowth technology. In Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007. Optical Society of America. 2007. (Optics InfoBase Conference Papers).