Thin films based on ternary Te-Ga-Sb alloys show much improvement over conventional Ge2 Sb2 Te5 for phase-change memory applications in our earlier researches. Disclosed in this paper are phase-change characteristics of a Sb-enriched composition TeGa2 Sb14. The crystallization temperature (Tc) determined from electrical resistivity versus temperature curve is 232° C. The activation energy of crystallization (Ec) evaluated by isothermal method is 3.66 eV. Data-retention is 143°C for 10 years attained from the extrapolation of the isothermal Arrhenius plot. The structure of the TeGa2Sb 14 films analyzed using grazing-incident-angle X-ray diffraction shows amorphous at as-deposited state and one crystalline phase well fitted by R3m Sb-structure after crystallization. Phase-change memory bridge-cells based on TeGa2 Sb14 film and TiN electrodes fabricated using focus-ion-beam method reveal typical characteristics of memory-switching behaviors suitable for phase-change memory.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering