Abstract
Thin films based on ternary Te-Ga-Sb alloys show much improvement over conventional Ge2 Sb2 Te5 for phase-change memory applications in our earlier researches. Disclosed in this paper are phase-change characteristics of a Sb-enriched composition TeGa2 Sb14. The crystallization temperature (Tc) determined from electrical resistivity versus temperature curve is 232° C. The activation energy of crystallization (Ec) evaluated by isothermal method is 3.66 eV. Data-retention is 143°C for 10 years attained from the extrapolation of the isothermal Arrhenius plot. The structure of the TeGa2Sb 14 films analyzed using grazing-incident-angle X-ray diffraction shows amorphous at as-deposited state and one crystalline phase well fitted by R3m Sb-structure after crystallization. Phase-change memory bridge-cells based on TeGa2 Sb14 film and TiN electrodes fabricated using focus-ion-beam method reveal typical characteristics of memory-switching behaviors suitable for phase-change memory.
| Original language | English |
|---|---|
| Article number | 5721813 |
| Pages (from-to) | 637-640 |
| Number of pages | 4 |
| Journal | IEEE Transactions on Magnetics |
| Volume | 47 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2011 Mar 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Characteristics of TeGa2Sb14 thin films for phase-change memory. / Chu, Yung Ching; Chao, Chien Tu; Chang, Po Chin; Chang, Shih Ching; Wu, Jong Ching; Chin, Tsung Shune.
In: IEEE Transactions on Magnetics, Vol. 47, No. 3, 5721813, 01.03.2011, p. 637-640.Research output: Contribution to journal › Article
TY - JOUR
T1 - Characteristics of TeGa2Sb14 thin films for phase-change memory
AU - Chu, Yung Ching
AU - Chao, Chien Tu
AU - Chang, Po Chin
AU - Chang, Shih Ching
AU - Wu, Jong Ching
AU - Chin, Tsung Shune
PY - 2011/3/1
Y1 - 2011/3/1
N2 - Thin films based on ternary Te-Ga-Sb alloys show much improvement over conventional Ge2 Sb2 Te5 for phase-change memory applications in our earlier researches. Disclosed in this paper are phase-change characteristics of a Sb-enriched composition TeGa2 Sb14. The crystallization temperature (Tc) determined from electrical resistivity versus temperature curve is 232° C. The activation energy of crystallization (Ec) evaluated by isothermal method is 3.66 eV. Data-retention is 143°C for 10 years attained from the extrapolation of the isothermal Arrhenius plot. The structure of the TeGa2Sb 14 films analyzed using grazing-incident-angle X-ray diffraction shows amorphous at as-deposited state and one crystalline phase well fitted by R3m Sb-structure after crystallization. Phase-change memory bridge-cells based on TeGa2 Sb14 film and TiN electrodes fabricated using focus-ion-beam method reveal typical characteristics of memory-switching behaviors suitable for phase-change memory.
AB - Thin films based on ternary Te-Ga-Sb alloys show much improvement over conventional Ge2 Sb2 Te5 for phase-change memory applications in our earlier researches. Disclosed in this paper are phase-change characteristics of a Sb-enriched composition TeGa2 Sb14. The crystallization temperature (Tc) determined from electrical resistivity versus temperature curve is 232° C. The activation energy of crystallization (Ec) evaluated by isothermal method is 3.66 eV. Data-retention is 143°C for 10 years attained from the extrapolation of the isothermal Arrhenius plot. The structure of the TeGa2Sb 14 films analyzed using grazing-incident-angle X-ray diffraction shows amorphous at as-deposited state and one crystalline phase well fitted by R3m Sb-structure after crystallization. Phase-change memory bridge-cells based on TeGa2 Sb14 film and TiN electrodes fabricated using focus-ion-beam method reveal typical characteristics of memory-switching behaviors suitable for phase-change memory.
UR - http://www.scopus.com/inward/record.url?scp=79952158531&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79952158531&partnerID=8YFLogxK
U2 - 10.1109/TMAG.2010.2102008
DO - 10.1109/TMAG.2010.2102008
M3 - Article
AN - SCOPUS:79952158531
VL - 47
SP - 637
EP - 640
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
SN - 0018-9464
IS - 3
M1 - 5721813
ER -