Characteristics of TeGa2Sb14 thin films for phase-change memory

Yung Ching Chu, Chien Tu Chao, Po Chin Chang, Shih Ching Chang, Jong Ching Wu, Tsung Shune Chin

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Abstract

Thin films based on ternary Te-Ga-Sb alloys show much improvement over conventional Ge2 Sb2 Te5 for phase-change memory applications in our earlier researches. Disclosed in this paper are phase-change characteristics of a Sb-enriched composition TeGa2 Sb14. The crystallization temperature (Tc) determined from electrical resistivity versus temperature curve is 232° C. The activation energy of crystallization (Ec) evaluated by isothermal method is 3.66 eV. Data-retention is 143°C for 10 years attained from the extrapolation of the isothermal Arrhenius plot. The structure of the TeGa2Sb 14 films analyzed using grazing-incident-angle X-ray diffraction shows amorphous at as-deposited state and one crystalline phase well fitted by R3m Sb-structure after crystallization. Phase-change memory bridge-cells based on TeGa2 Sb14 film and TiN electrodes fabricated using focus-ion-beam method reveal typical characteristics of memory-switching behaviors suitable for phase-change memory.

Original languageEnglish
Article number5721813
Pages (from-to)637-640
Number of pages4
JournalIEEE Transactions on Magnetics
Volume47
Issue number3
DOIs
Publication statusPublished - 2011 Mar 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Chu, Y. C., Chao, C. T., Chang, P. C., Chang, S. C., Wu, J. C., & Chin, T. S. (2011). Characteristics of TeGa2Sb14 thin films for phase-change memory. IEEE Transactions on Magnetics, 47(3), 637-640. [5721813]. https://doi.org/10.1109/TMAG.2010.2102008