Characteristics of TeGa2Sb14 thin films for phase-change memory

Yung Ching Chu; Chien Tu Chao; Po Chin Chang; Shih Ching Chang; Jong Ching Wu; Tsung Shune Chin

doi:10.1109/TMAG.2010.2102008

Characteristics of TeGa₂Sb₁₄ thin films for phase-change memory

Yung Ching Chu, Chien Tu Chao, Po Chin Chang, Shih Ching Chang, Jong Ching Wu, Tsung Shune Chin

Department of Physics

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

Thin films based on ternary Te-Ga-Sb alloys show much improvement over conventional Ge₂ Sb₂ Te₅ for phase-change memory applications in our earlier researches. Disclosed in this paper are phase-change characteristics of a Sb-enriched composition TeGa₂ Sb₁₄. The crystallization temperature (T_c) determined from electrical resistivity versus temperature curve is 232° C. The activation energy of crystallization (E_c) evaluated by isothermal method is 3.66 eV. Data-retention is 143°C for 10 years attained from the extrapolation of the isothermal Arrhenius plot. The structure of the TeGa₂Sb ₁₄ films analyzed using grazing-incident-angle X-ray diffraction shows amorphous at as-deposited state and one crystalline phase well fitted by R3m Sb-structure after crystallization. Phase-change memory bridge-cells based on TeGa₂ Sb₁₄ film and TiN electrodes fabricated using focus-ion-beam method reveal typical characteristics of memory-switching behaviors suitable for phase-change memory.

Original language	English
Article number	5721813
Pages (from-to)	637-640
Number of pages	4
Journal	IEEE Transactions on Magnetics
Volume	47
Issue number	3
DOIs	https://doi.org/10.1109/TMAG.2010.2102008
Publication status	Published - 2011 Mar 1

Fingerprint

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Chu, Y. C., Chao, C. T., Chang, P. C., Chang, S. C., Wu, J. C., & Chin, T. S. (2011). Characteristics of TeGa₂Sb₁₄ thin films for phase-change memory. IEEE Transactions on Magnetics, 47(3), 637-640. [5721813]. https://doi.org/10.1109/TMAG.2010.2102008

@article{1886d544269b41958fd3833b1ac17c86,

title = "Characteristics of TeGa2Sb14 thin films for phase-change memory",

abstract = "Thin films based on ternary Te-Ga-Sb alloys show much improvement over conventional Ge2 Sb2 Te5 for phase-change memory applications in our earlier researches. Disclosed in this paper are phase-change characteristics of a Sb-enriched composition TeGa2 Sb14. The crystallization temperature (Tc) determined from electrical resistivity versus temperature curve is 232° C. The activation energy of crystallization (Ec) evaluated by isothermal method is 3.66 eV. Data-retention is 143°C for 10 years attained from the extrapolation of the isothermal Arrhenius plot. The structure of the TeGa2Sb 14 films analyzed using grazing-incident-angle X-ray diffraction shows amorphous at as-deposited state and one crystalline phase well fitted by R3m Sb-structure after crystallization. Phase-change memory bridge-cells based on TeGa2 Sb14 film and TiN electrodes fabricated using focus-ion-beam method reveal typical characteristics of memory-switching behaviors suitable for phase-change memory.",

author = "Chu, {Yung Ching} and Chao, {Chien Tu} and Chang, {Po Chin} and Chang, {Shih Ching} and Wu, {Jong Ching} and Chin, {Tsung Shune}",

year = "2011",

month = mar

day = "1",

doi = "10.1109/TMAG.2010.2102008",

language = "English",

volume = "47",

pages = "637--640",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Characteristics of TeGa2Sb14 thin films for phase-change memory

AU - Chu, Yung Ching

AU - Chao, Chien Tu

AU - Chang, Po Chin

AU - Chang, Shih Ching

AU - Wu, Jong Ching

AU - Chin, Tsung Shune

PY - 2011/3/1

Y1 - 2011/3/1

N2 - Thin films based on ternary Te-Ga-Sb alloys show much improvement over conventional Ge2 Sb2 Te5 for phase-change memory applications in our earlier researches. Disclosed in this paper are phase-change characteristics of a Sb-enriched composition TeGa2 Sb14. The crystallization temperature (Tc) determined from electrical resistivity versus temperature curve is 232° C. The activation energy of crystallization (Ec) evaluated by isothermal method is 3.66 eV. Data-retention is 143°C for 10 years attained from the extrapolation of the isothermal Arrhenius plot. The structure of the TeGa2Sb 14 films analyzed using grazing-incident-angle X-ray diffraction shows amorphous at as-deposited state and one crystalline phase well fitted by R3m Sb-structure after crystallization. Phase-change memory bridge-cells based on TeGa2 Sb14 film and TiN electrodes fabricated using focus-ion-beam method reveal typical characteristics of memory-switching behaviors suitable for phase-change memory.

AB - Thin films based on ternary Te-Ga-Sb alloys show much improvement over conventional Ge2 Sb2 Te5 for phase-change memory applications in our earlier researches. Disclosed in this paper are phase-change characteristics of a Sb-enriched composition TeGa2 Sb14. The crystallization temperature (Tc) determined from electrical resistivity versus temperature curve is 232° C. The activation energy of crystallization (Ec) evaluated by isothermal method is 3.66 eV. Data-retention is 143°C for 10 years attained from the extrapolation of the isothermal Arrhenius plot. The structure of the TeGa2Sb 14 films analyzed using grazing-incident-angle X-ray diffraction shows amorphous at as-deposited state and one crystalline phase well fitted by R3m Sb-structure after crystallization. Phase-change memory bridge-cells based on TeGa2 Sb14 film and TiN electrodes fabricated using focus-ion-beam method reveal typical characteristics of memory-switching behaviors suitable for phase-change memory.

UR - http://www.scopus.com/inward/record.url?scp=79952158531&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952158531&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2010.2102008

DO - 10.1109/TMAG.2010.2102008

M3 - Article

AN - SCOPUS:79952158531

VL - 47

SP - 637

EP - 640

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 3

M1 - 5721813

ER -

Access to Document

10.1109/TMAG.2010.2102008