Characteristics of TeGa2Sb14 thin films for phase-change memory

Yung Ching Chu; Chien Tu Chao; Po Chin Chang; Shih Ching Chang; Jong Ching Wu; Tsung Shune Chin

doi:10.1109/TMAG.2010.2102008

Characteristics of TeGa₂Sb₁₄ thin films for phase-change memory

Yung Ching Chu, Chien Tu Chao, Po Chin Chang, Shih Ching Chang, Jong Ching Wu, Tsung Shune Chin

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Thin films based on ternary Te-Ga-Sb alloys show much improvement over conventional Ge₂ Sb₂ Te₅ for phase-change memory applications in our earlier researches. Disclosed in this paper are phase-change characteristics of a Sb-enriched composition TeGa₂ Sb₁₄. The crystallization temperature (T_c) determined from electrical resistivity versus temperature curve is 232° C. The activation energy of crystallization (E_c) evaluated by isothermal method is 3.66 eV. Data-retention is 143°C for 10 years attained from the extrapolation of the isothermal Arrhenius plot. The structure of the TeGa₂Sb ₁₄ films analyzed using grazing-incident-angle X-ray diffraction shows amorphous at as-deposited state and one crystalline phase well fitted by R3m Sb-structure after crystallization. Phase-change memory bridge-cells based on TeGa₂ Sb₁₄ film and TiN electrodes fabricated using focus-ion-beam method reveal typical characteristics of memory-switching behaviors suitable for phase-change memory.

Original language	English
Article number	5721813
Pages (from-to)	637-640
Number of pages	4
Journal	IEEE Transactions on Magnetics
Volume	47
Issue number	3
DOIs	https://doi.org/10.1109/TMAG.2010.2102008
Publication status	Published - 2011 Mar 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TMAG.2010.2102008

Fingerprint Dive into the research topics of 'Characteristics of TeGa<sub>2</sub>Sb<sub>14</sub> thin films for phase-change memory'. Together they form a unique fingerprint.

Cite this

@article{1886d544269b41958fd3833b1ac17c86,

title = "Characteristics of TeGa2Sb14 thin films for phase-change memory",

abstract = "Thin films based on ternary Te-Ga-Sb alloys show much improvement over conventional Ge2 Sb2 Te5 for phase-change memory applications in our earlier researches. Disclosed in this paper are phase-change characteristics of a Sb-enriched composition TeGa2 Sb14. The crystallization temperature (Tc) determined from electrical resistivity versus temperature curve is 232° C. The activation energy of crystallization (Ec) evaluated by isothermal method is 3.66 eV. Data-retention is 143°C for 10 years attained from the extrapolation of the isothermal Arrhenius plot. The structure of the TeGa2Sb 14 films analyzed using grazing-incident-angle X-ray diffraction shows amorphous at as-deposited state and one crystalline phase well fitted by R3m Sb-structure after crystallization. Phase-change memory bridge-cells based on TeGa2 Sb14 film and TiN electrodes fabricated using focus-ion-beam method reveal typical characteristics of memory-switching behaviors suitable for phase-change memory.",

author = "Chu, {Yung Ching} and Chao, {Chien Tu} and Chang, {Po Chin} and Chang, {Shih Ching} and Wu, {Jong Ching} and Chin, {Tsung Shune}",

year = "2011",

month = mar,

day = "1",

doi = "10.1109/TMAG.2010.2102008",

language = "English",

volume = "47",

pages = "637--640",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Characteristics of TeGa2Sb14 thin films for phase-change memory

AU - Chu, Yung Ching

AU - Chao, Chien Tu

AU - Chang, Po Chin

AU - Chang, Shih Ching

AU - Wu, Jong Ching

AU - Chin, Tsung Shune

PY - 2011/3/1

Y1 - 2011/3/1

N2 - Thin films based on ternary Te-Ga-Sb alloys show much improvement over conventional Ge2 Sb2 Te5 for phase-change memory applications in our earlier researches. Disclosed in this paper are phase-change characteristics of a Sb-enriched composition TeGa2 Sb14. The crystallization temperature (Tc) determined from electrical resistivity versus temperature curve is 232° C. The activation energy of crystallization (Ec) evaluated by isothermal method is 3.66 eV. Data-retention is 143°C for 10 years attained from the extrapolation of the isothermal Arrhenius plot. The structure of the TeGa2Sb 14 films analyzed using grazing-incident-angle X-ray diffraction shows amorphous at as-deposited state and one crystalline phase well fitted by R3m Sb-structure after crystallization. Phase-change memory bridge-cells based on TeGa2 Sb14 film and TiN electrodes fabricated using focus-ion-beam method reveal typical characteristics of memory-switching behaviors suitable for phase-change memory.

AB - Thin films based on ternary Te-Ga-Sb alloys show much improvement over conventional Ge2 Sb2 Te5 for phase-change memory applications in our earlier researches. Disclosed in this paper are phase-change characteristics of a Sb-enriched composition TeGa2 Sb14. The crystallization temperature (Tc) determined from electrical resistivity versus temperature curve is 232° C. The activation energy of crystallization (Ec) evaluated by isothermal method is 3.66 eV. Data-retention is 143°C for 10 years attained from the extrapolation of the isothermal Arrhenius plot. The structure of the TeGa2Sb 14 films analyzed using grazing-incident-angle X-ray diffraction shows amorphous at as-deposited state and one crystalline phase well fitted by R3m Sb-structure after crystallization. Phase-change memory bridge-cells based on TeGa2 Sb14 film and TiN electrodes fabricated using focus-ion-beam method reveal typical characteristics of memory-switching behaviors suitable for phase-change memory.

UR - http://www.scopus.com/inward/record.url?scp=79952158531&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952158531&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2010.2102008

DO - 10.1109/TMAG.2010.2102008

M3 - Article

AN - SCOPUS:79952158531

VL - 47

SP - 637

EP - 640

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 3

M1 - 5721813

ER -