Characteristics of System in a Package of Synchronous Dynamic Random Access Memory for High-Speed Data Storage Applications

Yeong Lin Lai; Wen Jung Chiang

doi:10.1109/TMAG.2014.2306797

Characteristics of System in a Package of Synchronous Dynamic Random Access Memory for High-Speed Data Storage Applications

Yeong Lin Lai, Wen Jung Chiang

Department of Mechatronic Engineering

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

This paper proposes a system in a package (SiP) integrating a system on a chip (SoC) and a double-data-rate-three synchronous dynamic random access memory (DDR3 SDRAM) for advanced data-storage-based systems. The characteristics of high frequency, signal integrity (SI), and power integrity (PI) were investigated for the SoC/DDR3-SDRAM SiP. The SiP exhibited low insertion loss, wide eye-diagram aperture, and low power impedance. The effect of de-coupling capacitors on the SiP was also examined. The SoC/DDR3-SDRAM SiP achieved excellent performance for high-speed data storage applications.

Original language	English
Article number	6851288
Journal	IEEE Transactions on Magnetics
Volume	50
Issue number	7
DOIs	https://doi.org/10.1109/TMAG.2014.2306797
Publication status	Published - 2014 Jul 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2014.2306797

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Lai, Y. L., & Chiang, W. J. (2014). Characteristics of System in a Package of Synchronous Dynamic Random Access Memory for High-Speed Data Storage Applications. IEEE Transactions on Magnetics, 50(7), [6851288]. https://doi.org/10.1109/TMAG.2014.2306797

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