Characteristics of GaAs power MESFETs with double silicon ion implantations for wireless communication applications

Chun Yi Zheng, Wen Jung Chiang, Yeong Lin Lai, Edward Y. Chang, Shen Li Chen, K. B. Wang

Research output: Contribution to journalArticle

Abstract

GaAs power metal-semiconductor field-effect transistors (MESFETs) were fabricated using direct double silicon (Si) ion implantation technology for wireless communication applications. A 150-μm MESFET had a saturation drain current of 238 mA/mm after Si3N4 passivation. A 15-mm MESFET, when measured under a class-AB condition with a biased drain voltage of 3.4 V and a quiescent drain current of 600 mA, delivered a maximum output power (Pout) of 31.1 dBm and a maximum power-added efficiency (PAE) of 58.0% at a frequency of 1.88 GHz. The MESFET exhibited a Pout of 29.2 dBm with a PAE of 45.0% at the 1-dB gain compression point. The MESFET, when measured under a deep class-B condition with a biased drain voltage of 4.7 V and a quiescent drain current of 50 mA, achieved a maximum Pout of 33.1 dBm and a maximum PAE of 55.9% at 1.88 GHz. The MESFET operating at 4.7 V and 1.88 GHz exhibited a P1dB of 31.8 dBm and an associated PAE of 47.1% at the 1-dB gain compression point. When tested by IS-95 code-division multiple access (CDMA) standard signals and biased at 4.7 V under the deep class-B condition, the MESFET with a Pout of 28 dBm demonstrated an adjacent channel power rejection (ACPR) of –31.2 dBc at +1.25 MHz apart from the 1.88 GHz center frequency and –45.7 dBc at +2.25 MHz.

Original languageEnglish
Pages (from-to)29-36
Number of pages8
JournalOpen Materials Science Journal
Volume10
DOIs
Publication statusPublished - 2016 Jun 1

Fingerprint

MESFET devices
Silicon
Ion implantation
Communication
Drain current
Electric potential
gallium arsenide
Power field effect transistors
Passivation
Code division multiple access

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Zheng, Chun Yi ; Chiang, Wen Jung ; Lai, Yeong Lin ; Chang, Edward Y. ; Chen, Shen Li ; Wang, K. B. / Characteristics of GaAs power MESFETs with double silicon ion implantations for wireless communication applications. In: Open Materials Science Journal. 2016 ; Vol. 10. pp. 29-36.
@article{1d5efe5828d24959be2462c9582bfc48,
title = "Characteristics of GaAs power MESFETs with double silicon ion implantations for wireless communication applications",
abstract = "GaAs power metal-semiconductor field-effect transistors (MESFETs) were fabricated using direct double silicon (Si) ion implantation technology for wireless communication applications. A 150-μm MESFET had a saturation drain current of 238 mA/mm after Si3N4 passivation. A 15-mm MESFET, when measured under a class-AB condition with a biased drain voltage of 3.4 V and a quiescent drain current of 600 mA, delivered a maximum output power (Pout) of 31.1 dBm and a maximum power-added efficiency (PAE) of 58.0{\%} at a frequency of 1.88 GHz. The MESFET exhibited a Pout of 29.2 dBm with a PAE of 45.0{\%} at the 1-dB gain compression point. The MESFET, when measured under a deep class-B condition with a biased drain voltage of 4.7 V and a quiescent drain current of 50 mA, achieved a maximum Pout of 33.1 dBm and a maximum PAE of 55.9{\%} at 1.88 GHz. The MESFET operating at 4.7 V and 1.88 GHz exhibited a P1dB of 31.8 dBm and an associated PAE of 47.1{\%} at the 1-dB gain compression point. When tested by IS-95 code-division multiple access (CDMA) standard signals and biased at 4.7 V under the deep class-B condition, the MESFET with a Pout of 28 dBm demonstrated an adjacent channel power rejection (ACPR) of –31.2 dBc at +1.25 MHz apart from the 1.88 GHz center frequency and –45.7 dBc at +2.25 MHz.",
author = "Zheng, {Chun Yi} and Chiang, {Wen Jung} and Lai, {Yeong Lin} and Chang, {Edward Y.} and Chen, {Shen Li} and Wang, {K. B.}",
year = "2016",
month = "6",
day = "1",
doi = "10.2174/1874088X01610010029",
language = "English",
volume = "10",
pages = "29--36",
journal = "Open Materials Science Journal",
issn = "1874-088X",
publisher = "Bentham Science Publishers B.V.",

}

Characteristics of GaAs power MESFETs with double silicon ion implantations for wireless communication applications. / Zheng, Chun Yi; Chiang, Wen Jung; Lai, Yeong Lin; Chang, Edward Y.; Chen, Shen Li; Wang, K. B.

In: Open Materials Science Journal, Vol. 10, 01.06.2016, p. 29-36.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Characteristics of GaAs power MESFETs with double silicon ion implantations for wireless communication applications

AU - Zheng, Chun Yi

AU - Chiang, Wen Jung

AU - Lai, Yeong Lin

AU - Chang, Edward Y.

AU - Chen, Shen Li

AU - Wang, K. B.

PY - 2016/6/1

Y1 - 2016/6/1

N2 - GaAs power metal-semiconductor field-effect transistors (MESFETs) were fabricated using direct double silicon (Si) ion implantation technology for wireless communication applications. A 150-μm MESFET had a saturation drain current of 238 mA/mm after Si3N4 passivation. A 15-mm MESFET, when measured under a class-AB condition with a biased drain voltage of 3.4 V and a quiescent drain current of 600 mA, delivered a maximum output power (Pout) of 31.1 dBm and a maximum power-added efficiency (PAE) of 58.0% at a frequency of 1.88 GHz. The MESFET exhibited a Pout of 29.2 dBm with a PAE of 45.0% at the 1-dB gain compression point. The MESFET, when measured under a deep class-B condition with a biased drain voltage of 4.7 V and a quiescent drain current of 50 mA, achieved a maximum Pout of 33.1 dBm and a maximum PAE of 55.9% at 1.88 GHz. The MESFET operating at 4.7 V and 1.88 GHz exhibited a P1dB of 31.8 dBm and an associated PAE of 47.1% at the 1-dB gain compression point. When tested by IS-95 code-division multiple access (CDMA) standard signals and biased at 4.7 V under the deep class-B condition, the MESFET with a Pout of 28 dBm demonstrated an adjacent channel power rejection (ACPR) of –31.2 dBc at +1.25 MHz apart from the 1.88 GHz center frequency and –45.7 dBc at +2.25 MHz.

AB - GaAs power metal-semiconductor field-effect transistors (MESFETs) were fabricated using direct double silicon (Si) ion implantation technology for wireless communication applications. A 150-μm MESFET had a saturation drain current of 238 mA/mm after Si3N4 passivation. A 15-mm MESFET, when measured under a class-AB condition with a biased drain voltage of 3.4 V and a quiescent drain current of 600 mA, delivered a maximum output power (Pout) of 31.1 dBm and a maximum power-added efficiency (PAE) of 58.0% at a frequency of 1.88 GHz. The MESFET exhibited a Pout of 29.2 dBm with a PAE of 45.0% at the 1-dB gain compression point. The MESFET, when measured under a deep class-B condition with a biased drain voltage of 4.7 V and a quiescent drain current of 50 mA, achieved a maximum Pout of 33.1 dBm and a maximum PAE of 55.9% at 1.88 GHz. The MESFET operating at 4.7 V and 1.88 GHz exhibited a P1dB of 31.8 dBm and an associated PAE of 47.1% at the 1-dB gain compression point. When tested by IS-95 code-division multiple access (CDMA) standard signals and biased at 4.7 V under the deep class-B condition, the MESFET with a Pout of 28 dBm demonstrated an adjacent channel power rejection (ACPR) of –31.2 dBc at +1.25 MHz apart from the 1.88 GHz center frequency and –45.7 dBc at +2.25 MHz.

UR - http://www.scopus.com/inward/record.url?scp=84981215851&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84981215851&partnerID=8YFLogxK

U2 - 10.2174/1874088X01610010029

DO - 10.2174/1874088X01610010029

M3 - Article

AN - SCOPUS:84981215851

VL - 10

SP - 29

EP - 36

JO - Open Materials Science Journal

JF - Open Materials Science Journal

SN - 1874-088X

ER -