Characteristics of GaAs power MESFETs with double silicon ion implantations for wireless communication applications

Chun Yi Zheng, Wen Jung Chiang, Yeong-Lin Lai, Edward Y. Chang, Shen Li Chen, K. B. Wang

Research output: Contribution to journalArticle

Abstract

GaAs power metal-semiconductor field-effect transistors (MESFETs) were fabricated using direct double silicon (Si) ion implantation technology for wireless communication applications. A 150-μm MESFET had a saturation drain current of 238 mA/mm after Si3N4 passivation. A 15-mm MESFET, when measured under a class-AB condition with a biased drain voltage of 3.4 V and a quiescent drain current of 600 mA, delivered a maximum output power (Pout) of 31.1 dBm and a maximum power-added efficiency (PAE) of 58.0% at a frequency of 1.88 GHz. The MESFET exhibited a Pout of 29.2 dBm with a PAE of 45.0% at the 1-dB gain compression point. The MESFET, when measured under a deep class-B condition with a biased drain voltage of 4.7 V and a quiescent drain current of 50 mA, achieved a maximum Pout of 33.1 dBm and a maximum PAE of 55.9% at 1.88 GHz. The MESFET operating at 4.7 V and 1.88 GHz exhibited a P1dB of 31.8 dBm and an associated PAE of 47.1% at the 1-dB gain compression point. When tested by IS-95 code-division multiple access (CDMA) standard signals and biased at 4.7 V under the deep class-B condition, the MESFET with a Pout of 28 dBm demonstrated an adjacent channel power rejection (ACPR) of –31.2 dBc at +1.25 MHz apart from the 1.88 GHz center frequency and –45.7 dBc at +2.25 MHz.

Original languageEnglish
Pages (from-to)29-36
Number of pages8
JournalOpen Materials Science Journal
Volume10
DOIs
Publication statusPublished - 2016 Jun 1

Fingerprint

MESFET devices
Silicon
Ion implantation
Communication
Drain current
Electric potential
gallium arsenide
Power field effect transistors
Passivation
Code division multiple access

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Zheng, Chun Yi ; Chiang, Wen Jung ; Lai, Yeong-Lin ; Chang, Edward Y. ; Chen, Shen Li ; Wang, K. B. / Characteristics of GaAs power MESFETs with double silicon ion implantations for wireless communication applications. In: Open Materials Science Journal. 2016 ; Vol. 10. pp. 29-36.
@article{1d5efe5828d24959be2462c9582bfc48,
title = "Characteristics of GaAs power MESFETs with double silicon ion implantations for wireless communication applications",
abstract = "GaAs power metal-semiconductor field-effect transistors (MESFETs) were fabricated using direct double silicon (Si) ion implantation technology for wireless communication applications. A 150-μm MESFET had a saturation drain current of 238 mA/mm after Si3N4 passivation. A 15-mm MESFET, when measured under a class-AB condition with a biased drain voltage of 3.4 V and a quiescent drain current of 600 mA, delivered a maximum output power (Pout) of 31.1 dBm and a maximum power-added efficiency (PAE) of 58.0{\%} at a frequency of 1.88 GHz. The MESFET exhibited a Pout of 29.2 dBm with a PAE of 45.0{\%} at the 1-dB gain compression point. The MESFET, when measured under a deep class-B condition with a biased drain voltage of 4.7 V and a quiescent drain current of 50 mA, achieved a maximum Pout of 33.1 dBm and a maximum PAE of 55.9{\%} at 1.88 GHz. The MESFET operating at 4.7 V and 1.88 GHz exhibited a P1dB of 31.8 dBm and an associated PAE of 47.1{\%} at the 1-dB gain compression point. When tested by IS-95 code-division multiple access (CDMA) standard signals and biased at 4.7 V under the deep class-B condition, the MESFET with a Pout of 28 dBm demonstrated an adjacent channel power rejection (ACPR) of –31.2 dBc at +1.25 MHz apart from the 1.88 GHz center frequency and –45.7 dBc at +2.25 MHz.",
author = "Zheng, {Chun Yi} and Chiang, {Wen Jung} and Yeong-Lin Lai and Chang, {Edward Y.} and Chen, {Shen Li} and Wang, {K. B.}",
year = "2016",
month = "6",
day = "1",
doi = "10.2174/1874088X01610010029",
language = "English",
volume = "10",
pages = "29--36",
journal = "Open Materials Science Journal",
issn = "1874-088X",
publisher = "Bentham Science Publishers B.V.",

}

Characteristics of GaAs power MESFETs with double silicon ion implantations for wireless communication applications. / Zheng, Chun Yi; Chiang, Wen Jung; Lai, Yeong-Lin; Chang, Edward Y.; Chen, Shen Li; Wang, K. B.

In: Open Materials Science Journal, Vol. 10, 01.06.2016, p. 29-36.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Characteristics of GaAs power MESFETs with double silicon ion implantations for wireless communication applications

AU - Zheng, Chun Yi

AU - Chiang, Wen Jung

AU - Lai, Yeong-Lin

AU - Chang, Edward Y.

AU - Chen, Shen Li

AU - Wang, K. B.

PY - 2016/6/1

Y1 - 2016/6/1

N2 - GaAs power metal-semiconductor field-effect transistors (MESFETs) were fabricated using direct double silicon (Si) ion implantation technology for wireless communication applications. A 150-μm MESFET had a saturation drain current of 238 mA/mm after Si3N4 passivation. A 15-mm MESFET, when measured under a class-AB condition with a biased drain voltage of 3.4 V and a quiescent drain current of 600 mA, delivered a maximum output power (Pout) of 31.1 dBm and a maximum power-added efficiency (PAE) of 58.0% at a frequency of 1.88 GHz. The MESFET exhibited a Pout of 29.2 dBm with a PAE of 45.0% at the 1-dB gain compression point. The MESFET, when measured under a deep class-B condition with a biased drain voltage of 4.7 V and a quiescent drain current of 50 mA, achieved a maximum Pout of 33.1 dBm and a maximum PAE of 55.9% at 1.88 GHz. The MESFET operating at 4.7 V and 1.88 GHz exhibited a P1dB of 31.8 dBm and an associated PAE of 47.1% at the 1-dB gain compression point. When tested by IS-95 code-division multiple access (CDMA) standard signals and biased at 4.7 V under the deep class-B condition, the MESFET with a Pout of 28 dBm demonstrated an adjacent channel power rejection (ACPR) of –31.2 dBc at +1.25 MHz apart from the 1.88 GHz center frequency and –45.7 dBc at +2.25 MHz.

AB - GaAs power metal-semiconductor field-effect transistors (MESFETs) were fabricated using direct double silicon (Si) ion implantation technology for wireless communication applications. A 150-μm MESFET had a saturation drain current of 238 mA/mm after Si3N4 passivation. A 15-mm MESFET, when measured under a class-AB condition with a biased drain voltage of 3.4 V and a quiescent drain current of 600 mA, delivered a maximum output power (Pout) of 31.1 dBm and a maximum power-added efficiency (PAE) of 58.0% at a frequency of 1.88 GHz. The MESFET exhibited a Pout of 29.2 dBm with a PAE of 45.0% at the 1-dB gain compression point. The MESFET, when measured under a deep class-B condition with a biased drain voltage of 4.7 V and a quiescent drain current of 50 mA, achieved a maximum Pout of 33.1 dBm and a maximum PAE of 55.9% at 1.88 GHz. The MESFET operating at 4.7 V and 1.88 GHz exhibited a P1dB of 31.8 dBm and an associated PAE of 47.1% at the 1-dB gain compression point. When tested by IS-95 code-division multiple access (CDMA) standard signals and biased at 4.7 V under the deep class-B condition, the MESFET with a Pout of 28 dBm demonstrated an adjacent channel power rejection (ACPR) of –31.2 dBc at +1.25 MHz apart from the 1.88 GHz center frequency and –45.7 dBc at +2.25 MHz.

UR - http://www.scopus.com/inward/record.url?scp=84981215851&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84981215851&partnerID=8YFLogxK

U2 - 10.2174/1874088X01610010029

DO - 10.2174/1874088X01610010029

M3 - Article

VL - 10

SP - 29

EP - 36

JO - Open Materials Science Journal

JF - Open Materials Science Journal

SN - 1874-088X

ER -