Characteristics of a-plane green light-emitting diode grown on r-plane sapphire

Shih Chun Ling; Te Chung Wang; Jun Rong Chen; Po Chun Liu; Tsung Shine Ko; Bao Yao Chang; Tien Chang Lu; Hao Chung Kuo; Shing Chung Wang; Jenq Dar Tsay

doi:10.1109/LPT.2009.2023234

Characteristics of a-plane green light-emitting diode grown on r-plane sapphire

Shih Chun Ling, Te Chung Wang, Jun Rong Chen, Po Chun Liu, Tsung Shine Ko, Bao Yao Chang, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang, Jenq Dar Tsay

Department of Electronic Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

In this work, we have successfully grown a-plane green light-emitting diodes (LEDs) on r-plane sapphire and investigated the device characteristics of a-plane green LEDs. The apparent emission polarization anisotropy was observed and the polarization degree was as high as 67.4%. In addition, the electroluminescence (EL) spectra first revealed a wavelength blue-shift with increasing drive current to 20 mA, which could be attributed to the band-filling effect, and then the EL peak become constant. The current-voltage curve showed the forward voltage of a-plane LED grown on r-plane sapphire substrate was 3.43 V and the differential series resistance was measured to be about 24 Ω as 20-mA injected current. Furthermore, the output power was 240 μW at 100-mA drive current.

Original language	English
Pages (from-to)	1130-1132
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	16
DOIs	https://doi.org/10.1109/LPT.2009.2023234
Publication status	Published - 2009 Aug 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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@article{4ff7a2843c4e4bb79c58e61dfea074ef,

title = "Characteristics of a-plane green light-emitting diode grown on r-plane sapphire",

abstract = "In this work, we have successfully grown a-plane green light-emitting diodes (LEDs) on r-plane sapphire and investigated the device characteristics of a-plane green LEDs. The apparent emission polarization anisotropy was observed and the polarization degree was as high as 67.4%. In addition, the electroluminescence (EL) spectra first revealed a wavelength blue-shift with increasing drive current to 20 mA, which could be attributed to the band-filling effect, and then the EL peak become constant. The current-voltage curve showed the forward voltage of a-plane LED grown on r-plane sapphire substrate was 3.43 V and the differential series resistance was measured to be about 24 Ω as 20-mA injected current. Furthermore, the output power was 240 μW at 100-mA drive current.",

author = "Ling, {Shih Chun} and Wang, {Te Chung} and Chen, {Jun Rong} and Liu, {Po Chun} and Ko, {Tsung Shine} and Chang, {Bao Yao} and Lu, {Tien Chang} and Kuo, {Hao Chung} and Wang, {Shing Chung} and Tsay, {Jenq Dar}",

year = "2009",

month = aug,

day = "15",

doi = "10.1109/LPT.2009.2023234",

language = "English",

volume = "21",

pages = "1130--1132",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "16",

}

Characteristics of a-plane green light-emitting diode grown on r-plane sapphire. / Ling, Shih Chun; Wang, Te Chung; Chen, Jun Rong; Liu, Po Chun; Ko, Tsung Shine; Chang, Bao Yao; Lu, Tien Chang; Kuo, Hao Chung; Wang, Shing Chung; Tsay, Jenq Dar.

In: IEEE Photonics Technology Letters, Vol. 21, No. 16, 15.08.2009, p. 1130-1132.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Characteristics of a-plane green light-emitting diode grown on r-plane sapphire

AU - Ling, Shih Chun

AU - Wang, Te Chung

AU - Chen, Jun Rong

AU - Liu, Po Chun

AU - Ko, Tsung Shine

AU - Chang, Bao Yao

AU - Lu, Tien Chang

AU - Kuo, Hao Chung

AU - Wang, Shing Chung

AU - Tsay, Jenq Dar

PY - 2009/8/15

Y1 - 2009/8/15

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AB - In this work, we have successfully grown a-plane green light-emitting diodes (LEDs) on r-plane sapphire and investigated the device characteristics of a-plane green LEDs. The apparent emission polarization anisotropy was observed and the polarization degree was as high as 67.4%. In addition, the electroluminescence (EL) spectra first revealed a wavelength blue-shift with increasing drive current to 20 mA, which could be attributed to the band-filling effect, and then the EL peak become constant. The current-voltage curve showed the forward voltage of a-plane LED grown on r-plane sapphire substrate was 3.43 V and the differential series resistance was measured to be about 24 Ω as 20-mA injected current. Furthermore, the output power was 240 μW at 100-mA drive current.

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