Abstract
In this work, we have successfully grown a-plane green light-emitting diodes (LEDs) on r-plane sapphire and investigated the device characteristics of a-plane green LEDs. The apparent emission polarization anisotropy was observed and the polarization degree was as high as 67.4%. In addition, the electroluminescence (EL) spectra first revealed a wavelength blue-shift with increasing drive current to 20 mA, which could be attributed to the band-filling effect, and then the EL peak become constant. The current-voltage curve showed the forward voltage of a-plane LED grown on r-plane sapphire substrate was 3.43 V and the differential series resistance was measured to be about 24 Ω as 20-mA injected current. Furthermore, the output power was 240 μW at 100-mA drive current.
Original language | English |
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Pages (from-to) | 1130-1132 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 21 |
Issue number | 16 |
DOIs | |
Publication status | Published - 2009 Aug 15 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering