Abstract
In this work, we have successfully grown a-plane green light-emitting diodes (LEDs) on r-plane sapphire and investigated the device characteristics of a-plane green LEDs. The apparent emission polarization anisotropy was observed and the polarization degree was as high as 67.4%. In addition, the electroluminescence (EL) spectra first revealed a wavelength blue-shift with increasing drive current to 20 mA, which could be attributed to the band-filling effect, and then the EL peak become constant. The current-voltage curve showed the forward voltage of a-plane LED grown on r-plane sapphire substrate was 3.43 V and the differential series resistance was measured to be about 24 Ω as 20-mA injected current. Furthermore, the output power was 240 μW at 100-mA drive current.
| Original language | English |
|---|---|
| Pages (from-to) | 1130-1132 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 21 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 2009 Aug 15 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
Cite this
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Characteristics of a-plane green light-emitting diode grown on r-plane sapphire. / Ling, Shih Chun; Wang, Te Chung; Chen, Jun Rong; Liu, Po Chun; Ko, Tsung-Shine; Chang, Bao Yao; Lu, Tien Chang; Kuo, Hao Chung; Wang, Shing Chung; Tsay, Jenq Dar.
In: IEEE Photonics Technology Letters, Vol. 21, No. 16, 15.08.2009, p. 1130-1132.Research output: Contribution to journal › Article
TY - JOUR
T1 - Characteristics of a-plane green light-emitting diode grown on r-plane sapphire
AU - Ling, Shih Chun
AU - Wang, Te Chung
AU - Chen, Jun Rong
AU - Liu, Po Chun
AU - Ko, Tsung-Shine
AU - Chang, Bao Yao
AU - Lu, Tien Chang
AU - Kuo, Hao Chung
AU - Wang, Shing Chung
AU - Tsay, Jenq Dar
PY - 2009/8/15
Y1 - 2009/8/15
N2 - In this work, we have successfully grown a-plane green light-emitting diodes (LEDs) on r-plane sapphire and investigated the device characteristics of a-plane green LEDs. The apparent emission polarization anisotropy was observed and the polarization degree was as high as 67.4%. In addition, the electroluminescence (EL) spectra first revealed a wavelength blue-shift with increasing drive current to 20 mA, which could be attributed to the band-filling effect, and then the EL peak become constant. The current-voltage curve showed the forward voltage of a-plane LED grown on r-plane sapphire substrate was 3.43 V and the differential series resistance was measured to be about 24 Ω as 20-mA injected current. Furthermore, the output power was 240 μW at 100-mA drive current.
AB - In this work, we have successfully grown a-plane green light-emitting diodes (LEDs) on r-plane sapphire and investigated the device characteristics of a-plane green LEDs. The apparent emission polarization anisotropy was observed and the polarization degree was as high as 67.4%. In addition, the electroluminescence (EL) spectra first revealed a wavelength blue-shift with increasing drive current to 20 mA, which could be attributed to the band-filling effect, and then the EL peak become constant. The current-voltage curve showed the forward voltage of a-plane LED grown on r-plane sapphire substrate was 3.43 V and the differential series resistance was measured to be about 24 Ω as 20-mA injected current. Furthermore, the output power was 240 μW at 100-mA drive current.
UR - http://www.scopus.com/inward/record.url?scp=68449101714&partnerID=8YFLogxK
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U2 - 10.1109/LPT.2009.2023234
DO - 10.1109/LPT.2009.2023234
M3 - Article
AN - SCOPUS:68449101714
VL - 21
SP - 1130
EP - 1132
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 16
ER -