Characteristics of a-plane green light-emitting diode grown on r-plane sapphire

Shih Chun Ling, Te Chung Wang, Jun Rong Chen, Po Chun Liu, Tsung Shine Ko, Bao Yao Chang, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang, Jenq Dar Tsay

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Abstract

In this work, we have successfully grown a-plane green light-emitting diodes (LEDs) on r-plane sapphire and investigated the device characteristics of a-plane green LEDs. The apparent emission polarization anisotropy was observed and the polarization degree was as high as 67.4%. In addition, the electroluminescence (EL) spectra first revealed a wavelength blue-shift with increasing drive current to 20 mA, which could be attributed to the band-filling effect, and then the EL peak become constant. The current-voltage curve showed the forward voltage of a-plane LED grown on r-plane sapphire substrate was 3.43 V and the differential series resistance was measured to be about 24 Ω as 20-mA injected current. Furthermore, the output power was 240 μW at 100-mA drive current.

Original languageEnglish
Pages (from-to)1130-1132
Number of pages3
JournalIEEE Photonics Technology Letters
Volume21
Issue number16
DOIs
Publication statusPublished - 2009 Aug 15

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Ling, S. C., Wang, T. C., Chen, J. R., Liu, P. C., Ko, T. S., Chang, B. Y., Lu, T. C., Kuo, H. C., Wang, S. C., & Tsay, J. D. (2009). Characteristics of a-plane green light-emitting diode grown on r-plane sapphire. IEEE Photonics Technology Letters, 21(16), 1130-1132. https://doi.org/10.1109/LPT.2009.2023234