Characteristics of a-plane GaN with the SiNx insertion layer grown by metal-organic chemical vapor deposition

T. S. Ko, T. C. Wang, H. M. Huang, J. R. Chen, H. G. Chen, C. P. Chu, T. C. Lu, H. C. Kuo, S. C. Wang

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Abstract

We utilized in-situ-grown SiNx insertion layers to mitigate part of dislocations stretching in nonpolar a-plane GaN films using metal-organic chemical vapor deposition. Both X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements revealed that better crystal quality and smoother surface could be obtained when the in-situ SiNx layer was inserted closer to the r-plane sapphire substrate and indicated that the in-situ SiNx insertion layer could suppress dislocations caused by lattice mismatch between the sapphire and epitaxial layers. In addition, photoluminescence and cathodoluminescence measurements confirmed the effect of the in-situ SiNx insertion layer on the optical properties of the improved a-plane GaN thin film, which is consistent with the XRD and AFM analyses and suggested reduction in the density of nonradiative centers.

Original languageEnglish
Pages (from-to)4972-4975
Number of pages4
JournalJournal of Crystal Growth
Volume310
Issue number23
DOIs
Publication statusPublished - 2008 Nov 15

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Ko, T. S., Wang, T. C., Huang, H. M., Chen, J. R., Chen, H. G., Chu, C. P., Lu, T. C., Kuo, H. C., & Wang, S. C. (2008). Characteristics of a-plane GaN with the SiNx insertion layer grown by metal-organic chemical vapor deposition. Journal of Crystal Growth, 310(23), 4972-4975. https://doi.org/10.1016/j.jcrysgro.2008.07.058