Characteristics of a-plane GaN with the SiNx insertion layer grown by metal-organic chemical vapor deposition

Tsung-Shine Ko, T. C. Wang, H. M. Huang, J. R. Chen, H. G. Chen, C. P. Chu, T. C. Lu, H. C. Kuo, S. C. Wang

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We utilized in-situ-grown SiNx insertion layers to mitigate part of dislocations stretching in nonpolar a-plane GaN films using metal-organic chemical vapor deposition. Both X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements revealed that better crystal quality and smoother surface could be obtained when the in-situ SiNx layer was inserted closer to the r-plane sapphire substrate and indicated that the in-situ SiNx insertion layer could suppress dislocations caused by lattice mismatch between the sapphire and epitaxial layers. In addition, photoluminescence and cathodoluminescence measurements confirmed the effect of the in-situ SiNx insertion layer on the optical properties of the improved a-plane GaN thin film, which is consistent with the XRD and AFM analyses and suggested reduction in the density of nonradiative centers.

Original languageEnglish
Pages (from-to)4972-4975
Number of pages4
JournalJournal of Crystal Growth
Volume310
Issue number23
DOIs
Publication statusPublished - 2008 Nov 15

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Organic Chemicals
Aluminum Oxide
Organic chemicals
Sapphire
metalorganic chemical vapor deposition
insertion
Chemical vapor deposition
Atomic force microscopy
Metals
X ray diffraction
Lattice mismatch
Cathodoluminescence
Epitaxial layers
Stretching
Photoluminescence
Optical properties
sapphire
Thin films
Crystals
atomic force microscopy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Ko, Tsung-Shine ; Wang, T. C. ; Huang, H. M. ; Chen, J. R. ; Chen, H. G. ; Chu, C. P. ; Lu, T. C. ; Kuo, H. C. ; Wang, S. C. / Characteristics of a-plane GaN with the SiNx insertion layer grown by metal-organic chemical vapor deposition. In: Journal of Crystal Growth. 2008 ; Vol. 310, No. 23. pp. 4972-4975.
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Characteristics of a-plane GaN with the SiNx insertion layer grown by metal-organic chemical vapor deposition. / Ko, Tsung-Shine; Wang, T. C.; Huang, H. M.; Chen, J. R.; Chen, H. G.; Chu, C. P.; Lu, T. C.; Kuo, H. C.; Wang, S. C.

In: Journal of Crystal Growth, Vol. 310, No. 23, 15.11.2008, p. 4972-4975.

Research output: Contribution to journalArticle

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AU - Ko, Tsung-Shine

AU - Wang, T. C.

AU - Huang, H. M.

AU - Chen, J. R.

AU - Chen, H. G.

AU - Chu, C. P.

AU - Lu, T. C.

AU - Kuo, H. C.

AU - Wang, S. C.

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