Abstract
The vertical-cavity surface-emitting lasers (VCSEL) operating in the spectral range near 850 nm usually utilize GaAs/AlGaAs as the active layer materials. In this work, in addition to the traditional unstrained GaAs/AlGaAs semiconductor laser, the characteristics of the strained InGaAs/AlGaAs vertical-cavity surface-emitting laser and the distributed Bragg reflectors (DBR) used in this semiconductor laser are investigated with a PICS3D (abbreviation of Photonic Integrated Circuit Simulator in 3D) simulation program. The simulation results show that the strained InGaAs/AlGaAs VCSEL has a better optical performance than that of the traditional unstrained GaAs/AlGaAs VCSEL. That is, when compared with the unstrained GaAs/AlGaAs quantum well structures, the strained InGaAs/AlGaAs VCSEL has a higher stimulated recombination rate, a lower threshold current, a higher main-side mode suppression ratio, and a higher characteristic temperature, which might be owing to its narrower well width and smaller carrier effective masses.
Original language | English |
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Pages (from-to) | 31-40 |
Number of pages | 10 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 4913 |
DOIs | |
Publication status | Published - 2002 Jan 1 |
Event | Semiconductor Lasers and Applications - Shanghai, China Duration: 2002 Oct 15 → 2002 Oct 17 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering