Characteristics of 850-nm InGaAs/AlGaAs vertical-cavity surface-emitting lasers

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Abstract

The vertical-cavity surface-emitting lasers (VCSEL) operating in the spectral range near 850 nm usually utilize GaAs/AlGaAs as the active layer materials. In this work, in addition to the traditional unstrained GaAs/AlGaAs semiconductor laser, the characteristics of the strained InGaAs/AlGaAs vertical-cavity surface-emitting laser and the distributed Bragg reflectors (DBR) used in this semiconductor laser are investigated with a PICS3D (abbreviation of Photonic Integrated Circuit Simulator in 3D) simulation program. The simulation results show that the strained InGaAs/AlGaAs VCSEL has a better optical performance than that of the traditional unstrained GaAs/AlGaAs VCSEL. That is, when compared with the unstrained GaAs/AlGaAs quantum well structures, the strained InGaAs/AlGaAs VCSEL has a higher stimulated recombination rate, a lower threshold current, a higher main-side mode suppression ratio, and a higher characteristic temperature, which might be owing to its narrower well width and smaller carrier effective masses.

Original languageEnglish
Pages (from-to)31-40
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4913
DOIs
Publication statusPublished - 2002 Jan 1
EventSemiconductor Lasers and Applications - Shanghai, China
Duration: 2002 Oct 152002 Oct 17

Fingerprint

Vertical-cavity Surface-emitting Laser (VCSEL)
InGaAs
Surface emitting lasers
surface emitting lasers
aluminum gallium arsenides
Gallium Arsenide
cavities
Semiconductor Lasers
Semiconductor lasers
Photonic Integrated Circuits
Abbreviation
Distributed Bragg reflectors
Effective Mass
semiconductor lasers
Reflector
Quantum Well
Recombination
Photonics
abbreviations
Semiconductor quantum wells

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

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title = "Characteristics of 850-nm InGaAs/AlGaAs vertical-cavity surface-emitting lasers",
abstract = "The vertical-cavity surface-emitting lasers (VCSEL) operating in the spectral range near 850 nm usually utilize GaAs/AlGaAs as the active layer materials. In this work, in addition to the traditional unstrained GaAs/AlGaAs semiconductor laser, the characteristics of the strained InGaAs/AlGaAs vertical-cavity surface-emitting laser and the distributed Bragg reflectors (DBR) used in this semiconductor laser are investigated with a PICS3D (abbreviation of Photonic Integrated Circuit Simulator in 3D) simulation program. The simulation results show that the strained InGaAs/AlGaAs VCSEL has a better optical performance than that of the traditional unstrained GaAs/AlGaAs VCSEL. That is, when compared with the unstrained GaAs/AlGaAs quantum well structures, the strained InGaAs/AlGaAs VCSEL has a higher stimulated recombination rate, a lower threshold current, a higher main-side mode suppression ratio, and a higher characteristic temperature, which might be owing to its narrower well width and smaller carrier effective masses.",
author = "Yuni Chang and Yen-Kuang Kuo and Man-Fang Huang",
year = "2002",
month = "1",
day = "1",
doi = "10.1117/12.482233",
language = "English",
volume = "4913",
pages = "31--40",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",

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TY - JOUR

T1 - Characteristics of 850-nm InGaAs/AlGaAs vertical-cavity surface-emitting lasers

AU - Chang, Yuni

AU - Kuo, Yen-Kuang

AU - Huang, Man-Fang

PY - 2002/1/1

Y1 - 2002/1/1

N2 - The vertical-cavity surface-emitting lasers (VCSEL) operating in the spectral range near 850 nm usually utilize GaAs/AlGaAs as the active layer materials. In this work, in addition to the traditional unstrained GaAs/AlGaAs semiconductor laser, the characteristics of the strained InGaAs/AlGaAs vertical-cavity surface-emitting laser and the distributed Bragg reflectors (DBR) used in this semiconductor laser are investigated with a PICS3D (abbreviation of Photonic Integrated Circuit Simulator in 3D) simulation program. The simulation results show that the strained InGaAs/AlGaAs VCSEL has a better optical performance than that of the traditional unstrained GaAs/AlGaAs VCSEL. That is, when compared with the unstrained GaAs/AlGaAs quantum well structures, the strained InGaAs/AlGaAs VCSEL has a higher stimulated recombination rate, a lower threshold current, a higher main-side mode suppression ratio, and a higher characteristic temperature, which might be owing to its narrower well width and smaller carrier effective masses.

AB - The vertical-cavity surface-emitting lasers (VCSEL) operating in the spectral range near 850 nm usually utilize GaAs/AlGaAs as the active layer materials. In this work, in addition to the traditional unstrained GaAs/AlGaAs semiconductor laser, the characteristics of the strained InGaAs/AlGaAs vertical-cavity surface-emitting laser and the distributed Bragg reflectors (DBR) used in this semiconductor laser are investigated with a PICS3D (abbreviation of Photonic Integrated Circuit Simulator in 3D) simulation program. The simulation results show that the strained InGaAs/AlGaAs VCSEL has a better optical performance than that of the traditional unstrained GaAs/AlGaAs VCSEL. That is, when compared with the unstrained GaAs/AlGaAs quantum well structures, the strained InGaAs/AlGaAs VCSEL has a higher stimulated recombination rate, a lower threshold current, a higher main-side mode suppression ratio, and a higher characteristic temperature, which might be owing to its narrower well width and smaller carrier effective masses.

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DO - 10.1117/12.482233

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

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