Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)2Sx treatment

Yow Jon Lin, Wen Xiang Lin, Ching Ting Lee, Feng Tso Chien

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Abstract

We have employed the photoluminescence (PL), surface photovoltage spectroscopy (SPS) and Hall effect measurements to study the effects of (NH 4)2Sx treatment on the optical and electrical properties of n-type GaN (n-GaN) in this study. (NH4) 2Sx treatment of n-GaN led to the decrease of the surface recombination velocity and the increase of the band-edge emission intensity, due to the accumulation of majority carriers and the repulsion of minority carriers near the (NH4)2Sx-treated n-GaN surface, the removal of the native oxide existed on the n-GaN, and sulfur passivation.

Original languageEnglish
Pages (from-to)257-259
Number of pages3
JournalSolid State Communications
Volume137
Issue number5
DOIs
Publication statusPublished - 2006 Feb 1

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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