Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)2Sx treatment

Yow-Jon Lin, Wen Xiang Lin, Ching Ting Lee, Feng Tso Chien

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We have employed the photoluminescence (PL), surface photovoltage spectroscopy (SPS) and Hall effect measurements to study the effects of (NH 4)2Sx treatment on the optical and electrical properties of n-type GaN (n-GaN) in this study. (NH4) 2Sx treatment of n-GaN led to the decrease of the surface recombination velocity and the increase of the band-edge emission intensity, due to the accumulation of majority carriers and the repulsion of minority carriers near the (NH4)2Sx-treated n-GaN surface, the removal of the native oxide existed on the n-GaN, and sulfur passivation.

Original languageEnglish
Pages (from-to)257-259
Number of pages3
JournalSolid State Communications
Volume137
Issue number5
DOIs
Publication statusPublished - 2006 Feb 1

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Electric properties
Optical properties
electrical properties
optical properties
majority carriers
photovoltages
Hall effect
minority carriers
Sulfur
Passivation
Oxides
passivity
Photoluminescence
sulfur
Spectroscopy
photoluminescence
oxides
spectroscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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title = "Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)2Sx treatment",
abstract = "We have employed the photoluminescence (PL), surface photovoltage spectroscopy (SPS) and Hall effect measurements to study the effects of (NH 4)2Sx treatment on the optical and electrical properties of n-type GaN (n-GaN) in this study. (NH4) 2Sx treatment of n-GaN led to the decrease of the surface recombination velocity and the increase of the band-edge emission intensity, due to the accumulation of majority carriers and the repulsion of minority carriers near the (NH4)2Sx-treated n-GaN surface, the removal of the native oxide existed on the n-GaN, and sulfur passivation.",
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Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)2Sx treatment. / Lin, Yow-Jon; Lin, Wen Xiang; Lee, Ching Ting; Chien, Feng Tso.

In: Solid State Communications, Vol. 137, No. 5, 01.02.2006, p. 257-259.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)2Sx treatment

AU - Lin, Yow-Jon

AU - Lin, Wen Xiang

AU - Lee, Ching Ting

AU - Chien, Feng Tso

PY - 2006/2/1

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AB - We have employed the photoluminescence (PL), surface photovoltage spectroscopy (SPS) and Hall effect measurements to study the effects of (NH 4)2Sx treatment on the optical and electrical properties of n-type GaN (n-GaN) in this study. (NH4) 2Sx treatment of n-GaN led to the decrease of the surface recombination velocity and the increase of the band-edge emission intensity, due to the accumulation of majority carriers and the repulsion of minority carriers near the (NH4)2Sx-treated n-GaN surface, the removal of the native oxide existed on the n-GaN, and sulfur passivation.

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