Changes in activation energies of donors and carrier concentration in Si-doped n-type GaN due to (NH4)2Sx treatment

Yow-Jon Lin, Ching Ting Lee, Hsing Cheng Chang

Research output: Contribution to journalArticle

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Abstract

In this study, changes in the activation energy of donors and carrier concentration in n-type GaN (n-GaN) samples, due to (NH4) 2Sx treatment, were investigated. We find that the activation energy of Si in the n-GaN samples without or with (NH 4)2Sx treatment was determined to be 21 meV and a donor level was also present in (NH4)2S x-treated n-GaN near the surface with an activation energy of 59 meV which is associated with sulfur donors substituting for nitrogen. By rearranging the well-known equations for the conductivity and mobility in two-layer systems, we find that the electron concentration within the thin sulfur-passivated layer in n-GaN near the surface at room temperature increased from its original value 6.9 × 1017 cm-3 to 9.7 × 1019 cm-3, resulting in the occurrence of the Burstein-Moss shift for optical band-gap observation.

Original languageEnglish
Article number031
Pages (from-to)1167-1171
Number of pages5
JournalSemiconductor Science and Technology
Volume21
Issue number8
DOIs
Publication statusPublished - 2006 Aug 1

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Carrier concentration
Activation energy
activation energy
Sulfur
sulfur
Bryophytes
Optical band gaps
Nitrogen
occurrences
nitrogen
conductivity
Electrons
shift
room temperature
electrons
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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abstract = "In this study, changes in the activation energy of donors and carrier concentration in n-type GaN (n-GaN) samples, due to (NH4) 2Sx treatment, were investigated. We find that the activation energy of Si in the n-GaN samples without or with (NH 4)2Sx treatment was determined to be 21 meV and a donor level was also present in (NH4)2S x-treated n-GaN near the surface with an activation energy of 59 meV which is associated with sulfur donors substituting for nitrogen. By rearranging the well-known equations for the conductivity and mobility in two-layer systems, we find that the electron concentration within the thin sulfur-passivated layer in n-GaN near the surface at room temperature increased from its original value 6.9 × 1017 cm-3 to 9.7 × 1019 cm-3, resulting in the occurrence of the Burstein-Moss shift for optical band-gap observation.",
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Changes in activation energies of donors and carrier concentration in Si-doped n-type GaN due to (NH4)2Sx treatment. / Lin, Yow-Jon; Lee, Ching Ting; Chang, Hsing Cheng.

In: Semiconductor Science and Technology, Vol. 21, No. 8, 031, 01.08.2006, p. 1167-1171.

Research output: Contribution to journalArticle

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AB - In this study, changes in the activation energy of donors and carrier concentration in n-type GaN (n-GaN) samples, due to (NH4) 2Sx treatment, were investigated. We find that the activation energy of Si in the n-GaN samples without or with (NH 4)2Sx treatment was determined to be 21 meV and a donor level was also present in (NH4)2S x-treated n-GaN near the surface with an activation energy of 59 meV which is associated with sulfur donors substituting for nitrogen. By rearranging the well-known equations for the conductivity and mobility in two-layer systems, we find that the electron concentration within the thin sulfur-passivated layer in n-GaN near the surface at room temperature increased from its original value 6.9 × 1017 cm-3 to 9.7 × 1019 cm-3, resulting in the occurrence of the Burstein-Moss shift for optical band-gap observation.

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