Cell-size effect on the interlayer coupling and magnetoresistance oscillation in perpendicular-anisotropy magnetic tunnel junction embedded with iron nanoparticles

Y. Lee, B. Das, T. Wu, Lance Horng, Jong-Ching Wu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Double barrier Magnetic tunnel junction (DBMTJ) is an attractive issue in the field of spintronics due to potential applications, such as spin diode [1], magnetic field sensor [2], and non-volatile spin-transfer-torque magnetic random access memories [3]. Essentially, the DB structures give rise to a high spin filtering efficiency, thus not only enhancing the tunneling magnetoresistance (TMR) ratio but also improving the MR decay as raising bias voltage. Therefore, many efforts have been devoted to investigating the specific phenomena in DBMTJs [4] experimentally and theoretically. Comparing to the in-planed DBMTJ, however, the perpendicular-type DBMTJs have more potential in raising the operating speed and data density. Herein, we investigate the size effect and temperature dependent behavior of perpendicular-anisotropy magnetic tunnel junction embedded with iron nanoparticles.

Original languageEnglish
Title of host publication2015 IEEE International Magnetics Conference, INTERMAG 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479973224
DOIs
Publication statusPublished - 2015 Jul 14
Event2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China
Duration: 2015 May 112015 May 15

Publication series

Name2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other2015 IEEE International Magnetics Conference, INTERMAG 2015
CountryChina
CityBeijing
Period15-05-1115-05-15

Fingerprint

Tunnel junctions
Magnetic anisotropy
Magnetoresistance
Iron
Nanoparticles
Tunnelling magnetoresistance
Magnetoelectronics
Bias voltage
Diodes
Torque
Magnetic fields
Data storage equipment
Sensors
Temperature

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Lee, Y., Das, B., Wu, T., Horng, L., & Wu, J-C. (2015). Cell-size effect on the interlayer coupling and magnetoresistance oscillation in perpendicular-anisotropy magnetic tunnel junction embedded with iron nanoparticles. In 2015 IEEE International Magnetics Conference, INTERMAG 2015 [7156584] (2015 IEEE International Magnetics Conference, INTERMAG 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2015.7156584
Lee, Y. ; Das, B. ; Wu, T. ; Horng, Lance ; Wu, Jong-Ching. / Cell-size effect on the interlayer coupling and magnetoresistance oscillation in perpendicular-anisotropy magnetic tunnel junction embedded with iron nanoparticles. 2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (2015 IEEE International Magnetics Conference, INTERMAG 2015).
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abstract = "Double barrier Magnetic tunnel junction (DBMTJ) is an attractive issue in the field of spintronics due to potential applications, such as spin diode [1], magnetic field sensor [2], and non-volatile spin-transfer-torque magnetic random access memories [3]. Essentially, the DB structures give rise to a high spin filtering efficiency, thus not only enhancing the tunneling magnetoresistance (TMR) ratio but also improving the MR decay as raising bias voltage. Therefore, many efforts have been devoted to investigating the specific phenomena in DBMTJs [4] experimentally and theoretically. Comparing to the in-planed DBMTJ, however, the perpendicular-type DBMTJs have more potential in raising the operating speed and data density. Herein, we investigate the size effect and temperature dependent behavior of perpendicular-anisotropy magnetic tunnel junction embedded with iron nanoparticles.",
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Lee, Y, Das, B, Wu, T, Horng, L & Wu, J-C 2015, Cell-size effect on the interlayer coupling and magnetoresistance oscillation in perpendicular-anisotropy magnetic tunnel junction embedded with iron nanoparticles. in 2015 IEEE International Magnetics Conference, INTERMAG 2015., 7156584, 2015 IEEE International Magnetics Conference, INTERMAG 2015, Institute of Electrical and Electronics Engineers Inc., 2015 IEEE International Magnetics Conference, INTERMAG 2015, Beijing, China, 15-05-11. https://doi.org/10.1109/INTMAG.2015.7156584

Cell-size effect on the interlayer coupling and magnetoresistance oscillation in perpendicular-anisotropy magnetic tunnel junction embedded with iron nanoparticles. / Lee, Y.; Das, B.; Wu, T.; Horng, Lance; Wu, Jong-Ching.

2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7156584 (2015 IEEE International Magnetics Conference, INTERMAG 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Lee Y, Das B, Wu T, Horng L, Wu J-C. Cell-size effect on the interlayer coupling and magnetoresistance oscillation in perpendicular-anisotropy magnetic tunnel junction embedded with iron nanoparticles. In 2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7156584. (2015 IEEE International Magnetics Conference, INTERMAG 2015). https://doi.org/10.1109/INTMAG.2015.7156584