Abstract
Double barrier Magnetic tunnel junction (DBMTJ) is an attractive issue in the field of spintronics due to potential applications, such as spin diode [1], magnetic field sensor [2], and non-volatile spin-transfer-torque magnetic random access memories [3]. Essentially, the DB structures give rise to a high spin filtering efficiency, thus not only enhancing the tunneling magnetoresistance (TMR) ratio but also improving the MR decay as raising bias voltage. Therefore, many efforts have been devoted to investigating the specific phenomena in DBMTJs [4] experimentally and theoretically. Comparing to the in-planed DBMTJ, however, the perpendicular-type DBMTJs have more potential in raising the operating speed and data density. Herein, we investigate the size effect and temperature dependent behavior of perpendicular-anisotropy magnetic tunnel junction embedded with iron nanoparticles.
| Original language | English |
|---|---|
| Title of host publication | 2015 IEEE International Magnetics Conference, INTERMAG 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781479973224 |
| DOIs | |
| Publication status | Published - 2015 Jul 14 |
| Event | 2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China Duration: 2015 May 11 → 2015 May 15 |
Publication series
| Name | 2015 IEEE International Magnetics Conference, INTERMAG 2015 |
|---|
Other
| Other | 2015 IEEE International Magnetics Conference, INTERMAG 2015 |
|---|---|
| Country | China |
| City | Beijing |
| Period | 15-05-11 → 15-05-15 |
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All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
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Cell-size effect on the interlayer coupling and magnetoresistance oscillation in perpendicular-anisotropy magnetic tunnel junction embedded with iron nanoparticles. / Lee, Y.; Das, B.; Wu, T.; Horng, Lance; Wu, Jong-Ching.
2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7156584 (2015 IEEE International Magnetics Conference, INTERMAG 2015).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Cell-size effect on the interlayer coupling and magnetoresistance oscillation in perpendicular-anisotropy magnetic tunnel junction embedded with iron nanoparticles
AU - Lee, Y.
AU - Das, B.
AU - Wu, T.
AU - Horng, Lance
AU - Wu, Jong-Ching
PY - 2015/7/14
Y1 - 2015/7/14
N2 - Double barrier Magnetic tunnel junction (DBMTJ) is an attractive issue in the field of spintronics due to potential applications, such as spin diode [1], magnetic field sensor [2], and non-volatile spin-transfer-torque magnetic random access memories [3]. Essentially, the DB structures give rise to a high spin filtering efficiency, thus not only enhancing the tunneling magnetoresistance (TMR) ratio but also improving the MR decay as raising bias voltage. Therefore, many efforts have been devoted to investigating the specific phenomena in DBMTJs [4] experimentally and theoretically. Comparing to the in-planed DBMTJ, however, the perpendicular-type DBMTJs have more potential in raising the operating speed and data density. Herein, we investigate the size effect and temperature dependent behavior of perpendicular-anisotropy magnetic tunnel junction embedded with iron nanoparticles.
AB - Double barrier Magnetic tunnel junction (DBMTJ) is an attractive issue in the field of spintronics due to potential applications, such as spin diode [1], magnetic field sensor [2], and non-volatile spin-transfer-torque magnetic random access memories [3]. Essentially, the DB structures give rise to a high spin filtering efficiency, thus not only enhancing the tunneling magnetoresistance (TMR) ratio but also improving the MR decay as raising bias voltage. Therefore, many efforts have been devoted to investigating the specific phenomena in DBMTJs [4] experimentally and theoretically. Comparing to the in-planed DBMTJ, however, the perpendicular-type DBMTJs have more potential in raising the operating speed and data density. Herein, we investigate the size effect and temperature dependent behavior of perpendicular-anisotropy magnetic tunnel junction embedded with iron nanoparticles.
UR - http://www.scopus.com/inward/record.url?scp=84942455949&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84942455949&partnerID=8YFLogxK
U2 - 10.1109/INTMAG.2015.7156584
DO - 10.1109/INTMAG.2015.7156584
M3 - Conference contribution
AN - SCOPUS:84942455949
T3 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015
PB - Institute of Electrical and Electronics Engineers Inc.
ER -