TY - JOUR
T1 - Carrier transportation and internal quantum efficiency of blue inGaN light-emitting diodes with P-Doped Barriers
AU - Tsai, Miao Chan
AU - Yen, Sheng Horng
AU - Kuo, Yen Kuang
N1 - Funding Information:
Manuscript received September 18, 2009; revised November 26, 2009; accepted December 29, 2009. First published January 12, 2010; current version published February 24, 2010. This work was supported by the National Science Council, Taiwan, under Grant NSC-96-2112-M-018-007-MY3. M.-C. Tsai is with the Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan. S.-H. Yen is with the R&D Division, Epistar Co., Ltd., Hsinchu 300, Taiwan. Y.-K. Kuo is with the Department of Physics, National Changhua University of Education, Changhua 500, Taiwan (e-mail: ykuo@cc.ncue.edu.tw). Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LPT.2010.2040075
PY - 2010/3/15
Y1 - 2010/3/15
N2 - In this letter, the situation when the barriers are partially p-doped in selected regions is considered in order to avoid the diffusion of Mg into the quantum well during crystal growth. Moreover, to increase the hole injection and improve the carrier distribution across the multiple quantum wells, the three barriers near the p-layers are p-doped with a gradually increased doping concentration in a blue InGaN light-emitting diode. According to the simulation results, when the stepwise p-doping profile is used in the selected barrier regions, the output power and internal quantum efficiency markedly improve due to the increased hole injection efficiency and decreased electron leakage.
AB - In this letter, the situation when the barriers are partially p-doped in selected regions is considered in order to avoid the diffusion of Mg into the quantum well during crystal growth. Moreover, to increase the hole injection and improve the carrier distribution across the multiple quantum wells, the three barriers near the p-layers are p-doped with a gradually increased doping concentration in a blue InGaN light-emitting diode. According to the simulation results, when the stepwise p-doping profile is used in the selected barrier regions, the output power and internal quantum efficiency markedly improve due to the increased hole injection efficiency and decreased electron leakage.
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U2 - 10.1109/LPT.2010.2040075
DO - 10.1109/LPT.2010.2040075
M3 - Article
AN - SCOPUS:77649142053
VL - 22
SP - 374
EP - 376
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 6
M1 - 5378628
ER -