Abstract
In this letter, the situation when the barriers are partially p-doped in selected regions is considered in order to avoid the diffusion of Mg into the quantum well during crystal growth. Moreover, to increase the hole injection and improve the carrier distribution across the multiple quantum wells, the three barriers near the p-layers are p-doped with a gradually increased doping concentration in a blue InGaN light-emitting diode. According to the simulation results, when the stepwise p-doping profile is used in the selected barrier regions, the output power and internal quantum efficiency markedly improve due to the increased hole injection efficiency and decreased electron leakage.
| Original language | English |
|---|---|
| Article number | 5378628 |
| Pages (from-to) | 374-376 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 22 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2010 Mar 15 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials
Cite this
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Carrier transportation and internal quantum efficiency of blue inGaN light-emitting diodes with P-Doped Barriers. / Tsai, Miao Chan; Yen, Sheng Horng; Kuo, Yen-Kuang.
In: IEEE Photonics Technology Letters, Vol. 22, No. 6, 5378628, 15.03.2010, p. 374-376.Research output: Contribution to journal › Article
TY - JOUR
T1 - Carrier transportation and internal quantum efficiency of blue inGaN light-emitting diodes with P-Doped Barriers
AU - Tsai, Miao Chan
AU - Yen, Sheng Horng
AU - Kuo, Yen-Kuang
PY - 2010/3/15
Y1 - 2010/3/15
N2 - In this letter, the situation when the barriers are partially p-doped in selected regions is considered in order to avoid the diffusion of Mg into the quantum well during crystal growth. Moreover, to increase the hole injection and improve the carrier distribution across the multiple quantum wells, the three barriers near the p-layers are p-doped with a gradually increased doping concentration in a blue InGaN light-emitting diode. According to the simulation results, when the stepwise p-doping profile is used in the selected barrier regions, the output power and internal quantum efficiency markedly improve due to the increased hole injection efficiency and decreased electron leakage.
AB - In this letter, the situation when the barriers are partially p-doped in selected regions is considered in order to avoid the diffusion of Mg into the quantum well during crystal growth. Moreover, to increase the hole injection and improve the carrier distribution across the multiple quantum wells, the three barriers near the p-layers are p-doped with a gradually increased doping concentration in a blue InGaN light-emitting diode. According to the simulation results, when the stepwise p-doping profile is used in the selected barrier regions, the output power and internal quantum efficiency markedly improve due to the increased hole injection efficiency and decreased electron leakage.
UR - http://www.scopus.com/inward/record.url?scp=77649142053&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77649142053&partnerID=8YFLogxK
U2 - 10.1109/LPT.2010.2040075
DO - 10.1109/LPT.2010.2040075
M3 - Article
AN - SCOPUS:77649142053
VL - 22
SP - 374
EP - 376
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 6
M1 - 5378628
ER -