Carrier transportation and internal quantum efficiency of blue inGaN light-emitting diodes with P-Doped Barriers

Miao Chan Tsai; Sheng Horng Yen; Yen-Kuang Kuo

doi:10.1109/LPT.2010.2040075

Carrier transportation and internal quantum efficiency of blue inGaN light-emitting diodes with P-Doped Barriers

Miao Chan Tsai, Sheng Horng Yen, Yen-Kuang Kuo

Department of Physics

Research output: Contribution to journal › Article

16 Citations (Scopus)

Abstract

In this letter, the situation when the barriers are partially p-doped in selected regions is considered in order to avoid the diffusion of Mg into the quantum well during crystal growth. Moreover, to increase the hole injection and improve the carrier distribution across the multiple quantum wells, the three barriers near the p-layers are p-doped with a gradually increased doping concentration in a blue InGaN light-emitting diode. According to the simulation results, when the stepwise p-doping profile is used in the selected barrier regions, the output power and internal quantum efficiency markedly improve due to the increased hole injection efficiency and decreased electron leakage.

Original language	English
Article number	5378628
Pages (from-to)	374-376
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	22
Issue number	6
DOIs	https://doi.org/10.1109/LPT.2010.2040075
Publication status	Published - 2010 Mar 15

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All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials

Cite this

Tsai, M. C., Yen, S. H., & Kuo, Y-K. (2010). Carrier transportation and internal quantum efficiency of blue inGaN light-emitting diodes with P-Doped Barriers. IEEE Photonics Technology Letters, 22(6), 374-376. [5378628]. https://doi.org/10.1109/LPT.2010.2040075

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Access to Document

10.1109/LPT.2010.2040075