Carrier transportation and internal quantum efficiency of blue inGaN light-emitting diodes with P-Doped Barriers

Miao Chan Tsai, Sheng Horng Yen, Yen-Kuang Kuo

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

In this letter, the situation when the barriers are partially p-doped in selected regions is considered in order to avoid the diffusion of Mg into the quantum well during crystal growth. Moreover, to increase the hole injection and improve the carrier distribution across the multiple quantum wells, the three barriers near the p-layers are p-doped with a gradually increased doping concentration in a blue InGaN light-emitting diode. According to the simulation results, when the stepwise p-doping profile is used in the selected barrier regions, the output power and internal quantum efficiency markedly improve due to the increased hole injection efficiency and decreased electron leakage.

Original languageEnglish
Article number5378628
Pages (from-to)374-376
Number of pages3
JournalIEEE Photonics Technology Letters
Volume22
Issue number6
DOIs
Publication statusPublished - 2010 Mar 15

Fingerprint

Quantum efficiency
Semiconductor quantum wells
Light emitting diodes
quantum efficiency
light emitting diodes
Doping (additives)
Crystallization
Crystal growth
quantum wells
injection
Electrons
crystal growth
leakage
output
profiles
electrons
simulation

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Cite this

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Carrier transportation and internal quantum efficiency of blue inGaN light-emitting diodes with P-Doped Barriers. / Tsai, Miao Chan; Yen, Sheng Horng; Kuo, Yen-Kuang.

In: IEEE Photonics Technology Letters, Vol. 22, No. 6, 5378628, 15.03.2010, p. 374-376.

Research output: Contribution to journalArticle

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