Carrier transport and photoresponse for heterojunction diodes based on the reduced graphene oxide-based TiO2 composite and p-type Si

Yow-Jon Lin, Shih Hung Yang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The present work reports the fabrication and detailed electrical properties of heterojunction diodes based on p-type Si and the reduced graphene oxide-based TiO2 (TiO2:RGO) composite. The enhanced dark conductivity was observed for TiO2:RGO composite films. The improved electrical conductivity is considered to mainly come from the mobility enhancement. The TiO2/p-type Si diode shows a poor rectifying behavior and low photoresponse. This is because of the dominance of electron traps in TiO2. However, the TiO2:RGO/p-type Si diode shows a good rectifying behavior and high photoresponse, which is attributed to high-mobility electron transport combined with the reduced number of electron traps.

Original languageEnglish
Pages (from-to)91-95
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume116
Issue number1
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Graphite
Carrier transport
Oxides
Graphene
Heterojunctions
Electron traps
Diodes
Composite materials
Composite films
Electric properties
Fabrication

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

@article{1f61aac0c5104b779675e61e0c646861,
title = "Carrier transport and photoresponse for heterojunction diodes based on the reduced graphene oxide-based TiO2 composite and p-type Si",
abstract = "The present work reports the fabrication and detailed electrical properties of heterojunction diodes based on p-type Si and the reduced graphene oxide-based TiO2 (TiO2:RGO) composite. The enhanced dark conductivity was observed for TiO2:RGO composite films. The improved electrical conductivity is considered to mainly come from the mobility enhancement. The TiO2/p-type Si diode shows a poor rectifying behavior and low photoresponse. This is because of the dominance of electron traps in TiO2. However, the TiO2:RGO/p-type Si diode shows a good rectifying behavior and high photoresponse, which is attributed to high-mobility electron transport combined with the reduced number of electron traps.",
author = "Yow-Jon Lin and Yang, {Shih Hung}",
year = "2014",
month = "1",
day = "1",
doi = "10.1007/s00339-013-8166-5",
language = "English",
volume = "116",
pages = "91--95",
journal = "Applied Physics A: Materials Science and Processing",
issn = "0947-8396",
number = "1",

}

TY - JOUR

T1 - Carrier transport and photoresponse for heterojunction diodes based on the reduced graphene oxide-based TiO2 composite and p-type Si

AU - Lin, Yow-Jon

AU - Yang, Shih Hung

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The present work reports the fabrication and detailed electrical properties of heterojunction diodes based on p-type Si and the reduced graphene oxide-based TiO2 (TiO2:RGO) composite. The enhanced dark conductivity was observed for TiO2:RGO composite films. The improved electrical conductivity is considered to mainly come from the mobility enhancement. The TiO2/p-type Si diode shows a poor rectifying behavior and low photoresponse. This is because of the dominance of electron traps in TiO2. However, the TiO2:RGO/p-type Si diode shows a good rectifying behavior and high photoresponse, which is attributed to high-mobility electron transport combined with the reduced number of electron traps.

AB - The present work reports the fabrication and detailed electrical properties of heterojunction diodes based on p-type Si and the reduced graphene oxide-based TiO2 (TiO2:RGO) composite. The enhanced dark conductivity was observed for TiO2:RGO composite films. The improved electrical conductivity is considered to mainly come from the mobility enhancement. The TiO2/p-type Si diode shows a poor rectifying behavior and low photoresponse. This is because of the dominance of electron traps in TiO2. However, the TiO2:RGO/p-type Si diode shows a good rectifying behavior and high photoresponse, which is attributed to high-mobility electron transport combined with the reduced number of electron traps.

UR - http://www.scopus.com/inward/record.url?scp=84903277342&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903277342&partnerID=8YFLogxK

U2 - 10.1007/s00339-013-8166-5

DO - 10.1007/s00339-013-8166-5

M3 - Article

AN - SCOPUS:84903277342

VL - 116

SP - 91

EP - 95

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

SN - 0947-8396

IS - 1

ER -