Carrier transport and charge detrapping in poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)/n-type Si and Polyaniline/ n-type Si diodes

Yow Jon Lin, Chang Feng You, Cheng Yu Chuang

Research output: Contribution to journalArticle

5 Citations (Scopus)


The effects of charge detrapping on the performances of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)/ n-type Si (PEDOT:PSS/n-Si) and polyaniline/n-Si diodes were examined in this study. The PEDOT:PSS/n-Si diode shows a poor rectifying behavior. In this work, charge trapping phenomena are studied through time domain measurement. The domination of electron (hole) detrapping was found in the PEDOT:PSS (polyaniline) film. A developed understanding of the charge detrapping/trapping effect is critical for device applications.

Original languageEnglish
Pages (from-to)Q31-Q33
JournalECS Journal of Solid State Science and Technology
Issue number3
Publication statusPublished - 2013 Nov 18


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this