Carrier transport and charge detrapping in poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)/n-type Si and Polyaniline/ n-type Si diodes

Yow Jon Lin, Chang Feng You, Cheng Yu Chuang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The effects of charge detrapping on the performances of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)/ n-type Si (PEDOT:PSS/n-Si) and polyaniline/n-Si diodes were examined in this study. The PEDOT:PSS/n-Si diode shows a poor rectifying behavior. In this work, charge trapping phenomena are studied through time domain measurement. The domination of electron (hole) detrapping was found in the PEDOT:PSS (polyaniline) film. A developed understanding of the charge detrapping/trapping effect is critical for device applications.

Original languageEnglish
Pages (from-to)Q31-Q33
JournalECS Journal of Solid State Science and Technology
Volume2
Issue number3
DOIs
Publication statusPublished - 2013 Nov 18

Fingerprint

Charge trapping
Carrier transport
Polyaniline
Diodes
Electrons
polyaniline
poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)
poly(3,4-ethylene dioxythiophene)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

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title = "Carrier transport and charge detrapping in poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)/n-type Si and Polyaniline/ n-type Si diodes",
abstract = "The effects of charge detrapping on the performances of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)/ n-type Si (PEDOT:PSS/n-Si) and polyaniline/n-Si diodes were examined in this study. The PEDOT:PSS/n-Si diode shows a poor rectifying behavior. In this work, charge trapping phenomena are studied through time domain measurement. The domination of electron (hole) detrapping was found in the PEDOT:PSS (polyaniline) film. A developed understanding of the charge detrapping/trapping effect is critical for device applications.",
author = "Lin, {Yow Jon} and You, {Chang Feng} and Chuang, {Cheng Yu}",
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T1 - Carrier transport and charge detrapping in poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)/n-type Si and Polyaniline/ n-type Si diodes

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AU - You, Chang Feng

AU - Chuang, Cheng Yu

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