Carrier dynamics in self-assembled CdTe Stranski-Krastanow quantum dots grown on ZnSe by molecular beam epitaxy

C. S. Yang, K. F. Chien, J. Y. Lai, C. W. Luo, W. C. Chou, Yu-Tai Shih, J. S. Wang, S. R. Jian

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Abstract

Self-assembled CdTe/ZnSe Stranski-Krastanow quantum-dot (QD) structures, which have a CdSe-like precursor-layer (PCL) between CdTe quantum dots and ZnSe matrix, were grown by molecular beam epitaxy. The carrier dynamics of the structures was studied by photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements. The temperature-dependent PL spectra revealed that there is a carrier transformation from small dots to larger dots via the precursor layer. Temperature-dependent PL measurements verify the existence of the QD excited excitonic state in 5.0 mono-layer (ML) coverage. In 0.6 ML coverage, the TRPL spectra exhibited a double-exponential decay process, as the detection energy at PCL emission energy. The faster decay time is corresponded to the carrier lifetime in PCL, the slower decay time exhibits the carrier in small QD. However, in 5.0 ML coverage, a faster and slower decay time represents the carrier lifetime in QD excited state for larger QD and the carrier lifetime in QD ground state for smaller QD.

Original languageEnglish
Pages (from-to)2905-2908
Number of pages4
JournalJournal of the Korean Physical Society
Volume53
Issue number5 PART 2
Publication statusPublished - 2008 Nov 1

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molecular beam epitaxy
quantum dots
photoluminescence
carrier lifetime
decay
excitation
ground state
temperature
energy
matrices

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Yang, C. S., Chien, K. F., Lai, J. Y., Luo, C. W., Chou, W. C., Shih, Y-T., ... Jian, S. R. (2008). Carrier dynamics in self-assembled CdTe Stranski-Krastanow quantum dots grown on ZnSe by molecular beam epitaxy. Journal of the Korean Physical Society, 53(5 PART 2), 2905-2908.
Yang, C. S. ; Chien, K. F. ; Lai, J. Y. ; Luo, C. W. ; Chou, W. C. ; Shih, Yu-Tai ; Wang, J. S. ; Jian, S. R. / Carrier dynamics in self-assembled CdTe Stranski-Krastanow quantum dots grown on ZnSe by molecular beam epitaxy. In: Journal of the Korean Physical Society. 2008 ; Vol. 53, No. 5 PART 2. pp. 2905-2908.
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abstract = "Self-assembled CdTe/ZnSe Stranski-Krastanow quantum-dot (QD) structures, which have a CdSe-like precursor-layer (PCL) between CdTe quantum dots and ZnSe matrix, were grown by molecular beam epitaxy. The carrier dynamics of the structures was studied by photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements. The temperature-dependent PL spectra revealed that there is a carrier transformation from small dots to larger dots via the precursor layer. Temperature-dependent PL measurements verify the existence of the QD excited excitonic state in 5.0 mono-layer (ML) coverage. In 0.6 ML coverage, the TRPL spectra exhibited a double-exponential decay process, as the detection energy at PCL emission energy. The faster decay time is corresponded to the carrier lifetime in PCL, the slower decay time exhibits the carrier in small QD. However, in 5.0 ML coverage, a faster and slower decay time represents the carrier lifetime in QD excited state for larger QD and the carrier lifetime in QD ground state for smaller QD.",
author = "Yang, {C. S.} and Chien, {K. F.} and Lai, {J. Y.} and Luo, {C. W.} and Chou, {W. C.} and Yu-Tai Shih and Wang, {J. S.} and Jian, {S. R.}",
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Yang, CS, Chien, KF, Lai, JY, Luo, CW, Chou, WC, Shih, Y-T, Wang, JS & Jian, SR 2008, 'Carrier dynamics in self-assembled CdTe Stranski-Krastanow quantum dots grown on ZnSe by molecular beam epitaxy', Journal of the Korean Physical Society, vol. 53, no. 5 PART 2, pp. 2905-2908.

Carrier dynamics in self-assembled CdTe Stranski-Krastanow quantum dots grown on ZnSe by molecular beam epitaxy. / Yang, C. S.; Chien, K. F.; Lai, J. Y.; Luo, C. W.; Chou, W. C.; Shih, Yu-Tai; Wang, J. S.; Jian, S. R.

In: Journal of the Korean Physical Society, Vol. 53, No. 5 PART 2, 01.11.2008, p. 2905-2908.

Research output: Contribution to journalArticle

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AU - Yang, C. S.

AU - Chien, K. F.

AU - Lai, J. Y.

AU - Luo, C. W.

AU - Chou, W. C.

AU - Shih, Yu-Tai

AU - Wang, J. S.

AU - Jian, S. R.

PY - 2008/11/1

Y1 - 2008/11/1

N2 - Self-assembled CdTe/ZnSe Stranski-Krastanow quantum-dot (QD) structures, which have a CdSe-like precursor-layer (PCL) between CdTe quantum dots and ZnSe matrix, were grown by molecular beam epitaxy. The carrier dynamics of the structures was studied by photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements. The temperature-dependent PL spectra revealed that there is a carrier transformation from small dots to larger dots via the precursor layer. Temperature-dependent PL measurements verify the existence of the QD excited excitonic state in 5.0 mono-layer (ML) coverage. In 0.6 ML coverage, the TRPL spectra exhibited a double-exponential decay process, as the detection energy at PCL emission energy. The faster decay time is corresponded to the carrier lifetime in PCL, the slower decay time exhibits the carrier in small QD. However, in 5.0 ML coverage, a faster and slower decay time represents the carrier lifetime in QD excited state for larger QD and the carrier lifetime in QD ground state for smaller QD.

AB - Self-assembled CdTe/ZnSe Stranski-Krastanow quantum-dot (QD) structures, which have a CdSe-like precursor-layer (PCL) between CdTe quantum dots and ZnSe matrix, were grown by molecular beam epitaxy. The carrier dynamics of the structures was studied by photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements. The temperature-dependent PL spectra revealed that there is a carrier transformation from small dots to larger dots via the precursor layer. Temperature-dependent PL measurements verify the existence of the QD excited excitonic state in 5.0 mono-layer (ML) coverage. In 0.6 ML coverage, the TRPL spectra exhibited a double-exponential decay process, as the detection energy at PCL emission energy. The faster decay time is corresponded to the carrier lifetime in PCL, the slower decay time exhibits the carrier in small QD. However, in 5.0 ML coverage, a faster and slower decay time represents the carrier lifetime in QD excited state for larger QD and the carrier lifetime in QD ground state for smaller QD.

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