Capacitance-voltage and current-voltage characteristics of Au/n-type Si (n-Si) and Au/poly(3,4-ethylenedioxythiophene) doped with poly(4- styrenesulfonate) (PEDOT : PSS)/n-Si Schottky diodes were investigated in this study. The interfacial phenomenon was explained in terms of the generation of an interfacial dipole subsequently affecting the electron-injection barrier. The authors found that inserting a PEDOT : PSS layer at the Au/n-Si interface may result in the formation of an interfacial dipole, increase the upward band bending in Si near the interface and reduce the reverse-bias leakage current. In this study, higher quality Schottky junctions were formed on n-Si using a simple technique of spin-coating PEDOT : PSS as the metal electrode.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films