Capacitance-voltage and current-voltage characteristics of Au Schottky contact on n-type Si with a conducting polymer

Yow-Jon Lin, Bo Chieh Huang, Yi Chun Lien, Ching Ting Lee, Chia Lung Tsai, Hsing Cheng Chang

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Capacitance-voltage and current-voltage characteristics of Au/n-type Si (n-Si) and Au/poly(3,4-ethylenedioxythiophene) doped with poly(4- styrenesulfonate) (PEDOT : PSS)/n-Si Schottky diodes were investigated in this study. The interfacial phenomenon was explained in terms of the generation of an interfacial dipole subsequently affecting the electron-injection barrier. The authors found that inserting a PEDOT : PSS layer at the Au/n-Si interface may result in the formation of an interfacial dipole, increase the upward band bending in Si near the interface and reduce the reverse-bias leakage current. In this study, higher quality Schottky junctions were formed on n-Si using a simple technique of spin-coating PEDOT : PSS as the metal electrode.

Original languageEnglish
Article number165104
JournalJournal of Physics D: Applied Physics
Volume42
Issue number16
DOIs
Publication statusPublished - 2009 Sep 17

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Capacitance-voltage and current-voltage characteristics of Au Schottky contact on n-type Si with a conducting polymer'. Together they form a unique fingerprint.

  • Cite this