Capacitance-voltage and current-voltage characteristics of Au Schottky contact on n-type Si with a conducting polymer

Yow-Jon Lin, Bo Chieh Huang, Yi Chun Lien, Ching Ting Lee, Chia Lung Tsai, Hsing Cheng Chang

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Capacitance-voltage and current-voltage characteristics of Au/n-type Si (n-Si) and Au/poly(3,4-ethylenedioxythiophene) doped with poly(4- styrenesulfonate) (PEDOT : PSS)/n-Si Schottky diodes were investigated in this study. The interfacial phenomenon was explained in terms of the generation of an interfacial dipole subsequently affecting the electron-injection barrier. The authors found that inserting a PEDOT : PSS layer at the Au/n-Si interface may result in the formation of an interfacial dipole, increase the upward band bending in Si near the interface and reduce the reverse-bias leakage current. In this study, higher quality Schottky junctions were formed on n-Si using a simple technique of spin-coating PEDOT : PSS as the metal electrode.

Original languageEnglish
Article number165104
JournalJournal of Physics D: Applied Physics
Volume42
Issue number16
DOIs
Publication statusPublished - 2009 Sep 17

Fingerprint

Electron injection
Conducting polymers
Spin coating
conducting polymers
Current voltage characteristics
Leakage currents
electric contacts
Diodes
Capacitance
capacitance
dipoles
Electrodes
Electric potential
electric potential
Schottky diodes
Metals
coating
leakage
injection
electrodes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Lin, Yow-Jon ; Huang, Bo Chieh ; Lien, Yi Chun ; Lee, Ching Ting ; Tsai, Chia Lung ; Chang, Hsing Cheng. / Capacitance-voltage and current-voltage characteristics of Au Schottky contact on n-type Si with a conducting polymer. In: Journal of Physics D: Applied Physics. 2009 ; Vol. 42, No. 16.
@article{53cb6c7ad2494000bb0ed03ed5d36604,
title = "Capacitance-voltage and current-voltage characteristics of Au Schottky contact on n-type Si with a conducting polymer",
abstract = "Capacitance-voltage and current-voltage characteristics of Au/n-type Si (n-Si) and Au/poly(3,4-ethylenedioxythiophene) doped with poly(4- styrenesulfonate) (PEDOT : PSS)/n-Si Schottky diodes were investigated in this study. The interfacial phenomenon was explained in terms of the generation of an interfacial dipole subsequently affecting the electron-injection barrier. The authors found that inserting a PEDOT : PSS layer at the Au/n-Si interface may result in the formation of an interfacial dipole, increase the upward band bending in Si near the interface and reduce the reverse-bias leakage current. In this study, higher quality Schottky junctions were formed on n-Si using a simple technique of spin-coating PEDOT : PSS as the metal electrode.",
author = "Yow-Jon Lin and Huang, {Bo Chieh} and Lien, {Yi Chun} and Lee, {Ching Ting} and Tsai, {Chia Lung} and Chang, {Hsing Cheng}",
year = "2009",
month = "9",
day = "17",
doi = "10.1088/0022-3727/42/16/165104",
language = "English",
volume = "42",
journal = "Journal Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "16",

}

Capacitance-voltage and current-voltage characteristics of Au Schottky contact on n-type Si with a conducting polymer. / Lin, Yow-Jon; Huang, Bo Chieh; Lien, Yi Chun; Lee, Ching Ting; Tsai, Chia Lung; Chang, Hsing Cheng.

In: Journal of Physics D: Applied Physics, Vol. 42, No. 16, 165104, 17.09.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Capacitance-voltage and current-voltage characteristics of Au Schottky contact on n-type Si with a conducting polymer

AU - Lin, Yow-Jon

AU - Huang, Bo Chieh

AU - Lien, Yi Chun

AU - Lee, Ching Ting

AU - Tsai, Chia Lung

AU - Chang, Hsing Cheng

PY - 2009/9/17

Y1 - 2009/9/17

N2 - Capacitance-voltage and current-voltage characteristics of Au/n-type Si (n-Si) and Au/poly(3,4-ethylenedioxythiophene) doped with poly(4- styrenesulfonate) (PEDOT : PSS)/n-Si Schottky diodes were investigated in this study. The interfacial phenomenon was explained in terms of the generation of an interfacial dipole subsequently affecting the electron-injection barrier. The authors found that inserting a PEDOT : PSS layer at the Au/n-Si interface may result in the formation of an interfacial dipole, increase the upward band bending in Si near the interface and reduce the reverse-bias leakage current. In this study, higher quality Schottky junctions were formed on n-Si using a simple technique of spin-coating PEDOT : PSS as the metal electrode.

AB - Capacitance-voltage and current-voltage characteristics of Au/n-type Si (n-Si) and Au/poly(3,4-ethylenedioxythiophene) doped with poly(4- styrenesulfonate) (PEDOT : PSS)/n-Si Schottky diodes were investigated in this study. The interfacial phenomenon was explained in terms of the generation of an interfacial dipole subsequently affecting the electron-injection barrier. The authors found that inserting a PEDOT : PSS layer at the Au/n-Si interface may result in the formation of an interfacial dipole, increase the upward band bending in Si near the interface and reduce the reverse-bias leakage current. In this study, higher quality Schottky junctions were formed on n-Si using a simple technique of spin-coating PEDOT : PSS as the metal electrode.

UR - http://www.scopus.com/inward/record.url?scp=70149103540&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70149103540&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/42/16/165104

DO - 10.1088/0022-3727/42/16/165104

M3 - Article

AN - SCOPUS:70149103540

VL - 42

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 16

M1 - 165104

ER -