Cadmium content-dependent photoluminescent properties and band offsets of Zn1−xCdxO films

Jian Huang Lin, Yow Jon Lin

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Abstract

In this study, the Zn1−xCdxO (x = 0, 1.6, 3.3, and 4.7 %) films were deposited on substrates by the sol–gel technique. X-ray diffraction, photoluminescence (PL), optical absorption and conductivity measurements were used to characterize the films. The carrier concentration (NC) increases with increasing Cd content. The interstitial zinc is the origin of a NC increase. PL measurements are employed to evaluate the effect of Cd content on the energy bandgap and band offset of Zn1−xCdxO films. It is shown that the incorporation of Cd leads to the reduced energy bandgap and the ratio of conduction band offset and valence band offset is approximately 1:2 for Zn1−xCdxO samples. In addition, the Stokes’ shift between the absorption and emission is observed. PL can be considered as the reliable tool for evaluating the Cd content-dependent band offsets of Zn1−xCdxO films.

Original languageEnglish
Pages (from-to)5254-5258
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Volume26
Issue number7
DOIs
Publication statusPublished - 2015 Jul 24

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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