Brief rapid thermal treatment effect on patterned CoFeB-based magnetic tunneling junctions

Kuo Ming Wu, Chao Hsien Huang, Yung Hung Wang, Ming Jer Kao, Ming Jinn Tsai, Jong-Ching Wu, Lance Horng

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The brief thermal treatment effects on the magnetoresistance of microstructured Co60 Fe20 B20 -based magnetic tunneling junctions have been studied. The elliptical shape of devices with long/short axis of 42 μm was patterned out of film stack of seed layer (20) PtMn (15) Co60 Fe20 B20 (3) Al (0.7) oxide C60 Fe20 B20 (20) capping layer (48) (thickness unit in nanometers) combining conventional lithography and inductively coupled plasma reactive ion beam etching technologies. The thermal annealing was carried out with device loading into a furnace with preset temperatures ranging from 100 to 400 °C for only 5 min in the absence of any external magnetic field. The magnetoresistance was found to increase with increasing annealing temperatures up to 250 °C and then decrease at higher annealing temperatures. In addition, the magnetoresistance ratio of around 35%, similar to that of as-fabricated devices, sustains up to annealing temperature of 350 °C. This survival of magnetoresistance at higher annealing temperature is due to boron conservation in the amorphous CoFeB ferromagnetic layer at higher annealing temperature for only a short time, which is manifested using x-ray diffractometer technique.

Original languageEnglish
Article number09B503
JournalJournal of Applied Physics
Volume101
Issue number9
DOIs
Publication statusPublished - 2007 May 21

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annealing
temperature
diffractometers
furnaces
conservation
seeds
boron
lithography
ion beams
etching
oxides
magnetic fields
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Wu, Kuo Ming ; Huang, Chao Hsien ; Wang, Yung Hung ; Kao, Ming Jer ; Tsai, Ming Jinn ; Wu, Jong-Ching ; Horng, Lance. / Brief rapid thermal treatment effect on patterned CoFeB-based magnetic tunneling junctions. In: Journal of Applied Physics. 2007 ; Vol. 101, No. 9.
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abstract = "The brief thermal treatment effects on the magnetoresistance of microstructured Co60 Fe20 B20 -based magnetic tunneling junctions have been studied. The elliptical shape of devices with long/short axis of 42 μm was patterned out of film stack of seed layer (20) PtMn (15) Co60 Fe20 B20 (3) Al (0.7) oxide C60 Fe20 B20 (20) capping layer (48) (thickness unit in nanometers) combining conventional lithography and inductively coupled plasma reactive ion beam etching technologies. The thermal annealing was carried out with device loading into a furnace with preset temperatures ranging from 100 to 400 °C for only 5 min in the absence of any external magnetic field. The magnetoresistance was found to increase with increasing annealing temperatures up to 250 °C and then decrease at higher annealing temperatures. In addition, the magnetoresistance ratio of around 35{\%}, similar to that of as-fabricated devices, sustains up to annealing temperature of 350 °C. This survival of magnetoresistance at higher annealing temperature is due to boron conservation in the amorphous CoFeB ferromagnetic layer at higher annealing temperature for only a short time, which is manifested using x-ray diffractometer technique.",
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Brief rapid thermal treatment effect on patterned CoFeB-based magnetic tunneling junctions. / Wu, Kuo Ming; Huang, Chao Hsien; Wang, Yung Hung; Kao, Ming Jer; Tsai, Ming Jinn; Wu, Jong-Ching; Horng, Lance.

In: Journal of Applied Physics, Vol. 101, No. 9, 09B503, 21.05.2007.

Research output: Contribution to journalArticle

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