Abstract
The zincblende InxGa1-xN alloys are studied by numerical analysis based on first-principles calculations. A 64-atom supercell is used to model these alloys. Our results indicate that the ternary InxGa1-xN alloys have an average band gap bowing parameter of 2.08 eV. The simulation results also suggest that the composition-dependent bowing parameter of the ternary InxGa1-xN alloys can be expressed by a third-order polynomial equation, b(x) = -4.7422 x3 + 6.9592 x2 - 2.3136 x + 2.1301 (eV).
| Original language | English |
|---|---|
| Pages (from-to) | 153-156 |
| Number of pages | 4 |
| Journal | Optics Communications |
| Volume | 280 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2007 Dec 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering
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Kuo, Y-K., Chu, H. Y., Yen, S. H., Liou, B. T., & Chen, M. L. (2007). Bowing parameter of zincblende InxGa1-xN. Optics Communications, 280(1), 153-156. https://doi.org/10.1016/j.optcom.2007.07.058