Bowing parameter of zincblende InxGa1-xN

Yen-Kuang Kuo, Han Yi Chu, Sheng Horng Yen, Bo Ting Liou, Mei Ling Chen

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Abstract

The zincblende InxGa1-xN alloys are studied by numerical analysis based on first-principles calculations. A 64-atom supercell is used to model these alloys. Our results indicate that the ternary InxGa1-xN alloys have an average band gap bowing parameter of 2.08 eV. The simulation results also suggest that the composition-dependent bowing parameter of the ternary InxGa1-xN alloys can be expressed by a third-order polynomial equation, b(x) = -4.7422 x3 + 6.9592 x2 - 2.3136 x + 2.1301 (eV).

Original languageEnglish
Pages (from-to)153-156
Number of pages4
JournalOptics Communications
Volume280
Issue number1
DOIs
Publication statusPublished - 2007 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering

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    Kuo, Y-K., Chu, H. Y., Yen, S. H., Liou, B. T., & Chen, M. L. (2007). Bowing parameter of zincblende InxGa1-xN. Optics Communications, 280(1), 153-156. https://doi.org/10.1016/j.optcom.2007.07.058