Blue InGaN light-emitting diodes with multiple GaN-InGaN barriers

Yen Kuang Kuo, Tsun Hsin Wang, Jih Yuan Chang

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


Optical performance of blue InGaN light-emitting diodes (LEDs) with multiple GaN-InGaN barriers is investigated. The energy band diagrams, light-current performance curves, and internal quantum efficiency are studied numerically. The simulation results show that the InGaN LED has markedly improved the optical performance when the first conventional GaN barrier is replaced by the GaN-InGaN-GaN barrier, in which the indium composition is less than 5%, with other GaN barriers remain unchanged. The improved performance is due to the enhanced injection efficiency of holes and relatively uniform distribution of electrons and holes.

Original languageEnglish
Article number6176192
Pages (from-to)946-951
Number of pages6
JournalIEEE Journal of Quantum Electronics
Issue number7
Publication statusPublished - 2012 May 22

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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