Blue InGaN light-emitting diodes with multiple GaN-InGaN barriers

Yen Kuang Kuo, Tsun Hsin Wang, Jih Yuan Chang

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Optical performance of blue InGaN light-emitting diodes (LEDs) with multiple GaN-InGaN barriers is investigated. The energy band diagrams, light-current performance curves, and internal quantum efficiency are studied numerically. The simulation results show that the InGaN LED has markedly improved the optical performance when the first conventional GaN barrier is replaced by the GaN-InGaN-GaN barrier, in which the indium composition is less than 5%, with other GaN barriers remain unchanged. The improved performance is due to the enhanced injection efficiency of holes and relatively uniform distribution of electrons and holes.

Original languageEnglish
Article number6176192
Pages (from-to)946-951
Number of pages6
JournalIEEE Journal of Quantum Electronics
Volume48
Issue number7
DOIs
Publication statusPublished - 2012 May 22

Fingerprint

Light emitting diodes
light emitting diodes
Quantum efficiency
Band structure
Indium
Electrons
Chemical analysis
energy bands
indium
quantum efficiency
diagrams
injection
curves
electrons
simulation

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

@article{52f1847a269c46128b911e0be62e344d,
title = "Blue InGaN light-emitting diodes with multiple GaN-InGaN barriers",
abstract = "Optical performance of blue InGaN light-emitting diodes (LEDs) with multiple GaN-InGaN barriers is investigated. The energy band diagrams, light-current performance curves, and internal quantum efficiency are studied numerically. The simulation results show that the InGaN LED has markedly improved the optical performance when the first conventional GaN barrier is replaced by the GaN-InGaN-GaN barrier, in which the indium composition is less than 5{\%}, with other GaN barriers remain unchanged. The improved performance is due to the enhanced injection efficiency of holes and relatively uniform distribution of electrons and holes.",
author = "Kuo, {Yen Kuang} and Wang, {Tsun Hsin} and Chang, {Jih Yuan}",
year = "2012",
month = "5",
day = "22",
doi = "10.1109/JQE.2012.2192717",
language = "English",
volume = "48",
pages = "946--951",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",

}

Blue InGaN light-emitting diodes with multiple GaN-InGaN barriers. / Kuo, Yen Kuang; Wang, Tsun Hsin; Chang, Jih Yuan.

In: IEEE Journal of Quantum Electronics, Vol. 48, No. 7, 6176192, 22.05.2012, p. 946-951.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Blue InGaN light-emitting diodes with multiple GaN-InGaN barriers

AU - Kuo, Yen Kuang

AU - Wang, Tsun Hsin

AU - Chang, Jih Yuan

PY - 2012/5/22

Y1 - 2012/5/22

N2 - Optical performance of blue InGaN light-emitting diodes (LEDs) with multiple GaN-InGaN barriers is investigated. The energy band diagrams, light-current performance curves, and internal quantum efficiency are studied numerically. The simulation results show that the InGaN LED has markedly improved the optical performance when the first conventional GaN barrier is replaced by the GaN-InGaN-GaN barrier, in which the indium composition is less than 5%, with other GaN barriers remain unchanged. The improved performance is due to the enhanced injection efficiency of holes and relatively uniform distribution of electrons and holes.

AB - Optical performance of blue InGaN light-emitting diodes (LEDs) with multiple GaN-InGaN barriers is investigated. The energy band diagrams, light-current performance curves, and internal quantum efficiency are studied numerically. The simulation results show that the InGaN LED has markedly improved the optical performance when the first conventional GaN barrier is replaced by the GaN-InGaN-GaN barrier, in which the indium composition is less than 5%, with other GaN barriers remain unchanged. The improved performance is due to the enhanced injection efficiency of holes and relatively uniform distribution of electrons and holes.

UR - http://www.scopus.com/inward/record.url?scp=84861121990&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861121990&partnerID=8YFLogxK

U2 - 10.1109/JQE.2012.2192717

DO - 10.1109/JQE.2012.2192717

M3 - Article

AN - SCOPUS:84861121990

VL - 48

SP - 946

EP - 951

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 7

M1 - 6176192

ER -