Bias-dependent charge accumulation in pentacene-based thin-film transistors

Chi Feng Lin, Kai Hsiang Chuang, Yet Min Chen, Jiun Haw Lee, Jian Jang Huang, Yu-Wu Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we have demonstrated the current increase with repeated measurements of I d -V ds curves with different V g values which results from the non-uniform carrier accumulation in the channel region of a pentacene-based thin film transistor (TFT). The mobility of our device reaches 0.07 cm 2 /Vs even the substrate was not heated during pentacene deposition. Besides, the devices show good air-stable properties. The magnitude of I d decreased less than 30% after exposure in air for 2 weeks. By repeating the I d -V ds measurements from 0 to -50 V with the V g values of 0, -10, -20, -30, -40, and -50 V for 10 minutes, we observed a four times current increase from -0.75 to -2.8 μA at V g = -50V and V ds =50V. The current increase comes from the holes accumulation near the drain. When the source and drain were exchanged, the current decreases to the 0.08 μA, After another 10 minutes operation, the current will recover back to the original values. Such a process is reversible and shows the potential of the memory device base on this pentacene transistor.

Original languageEnglish
Title of host publicationOrganic Field-Effect Transistors V
DOIs
Publication statusPublished - 2006 Dec 1
EventOrganic Field-Effect Transistors V - San Diego, CA, United States
Duration: 2006 Aug 132006 Aug 15

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6336
ISSN (Print)0277-786X

Other

OtherOrganic Field-Effect Transistors V
CountryUnited States
CitySan Diego, CA
Period06-08-1306-08-15

Fingerprint

Thin-film Transistor
Thin film transistors
transistors
Charge
Dependent
thin films
Air
Transistors
Repeated Measurements
Data storage equipment
Substrates
Substrate
air
Decrease
Curve
pentacene
curves

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Lin, C. F., Chuang, K. H., Chen, Y. M., Lee, J. H., Huang, J. J., & Wang, Y-W. (2006). Bias-dependent charge accumulation in pentacene-based thin-film transistors. In Organic Field-Effect Transistors V [63361F] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6336). https://doi.org/10.1117/12.678972
Lin, Chi Feng ; Chuang, Kai Hsiang ; Chen, Yet Min ; Lee, Jiun Haw ; Huang, Jian Jang ; Wang, Yu-Wu. / Bias-dependent charge accumulation in pentacene-based thin-film transistors. Organic Field-Effect Transistors V. 2006. (Proceedings of SPIE - The International Society for Optical Engineering).
@inproceedings{1ff9a1fcf8b94e85a49da72e2caf5a9c,
title = "Bias-dependent charge accumulation in pentacene-based thin-film transistors",
abstract = "In this paper, we have demonstrated the current increase with repeated measurements of I d -V ds curves with different V g values which results from the non-uniform carrier accumulation in the channel region of a pentacene-based thin film transistor (TFT). The mobility of our device reaches 0.07 cm 2 /Vs even the substrate was not heated during pentacene deposition. Besides, the devices show good air-stable properties. The magnitude of I d decreased less than 30{\%} after exposure in air for 2 weeks. By repeating the I d -V ds measurements from 0 to -50 V with the V g values of 0, -10, -20, -30, -40, and -50 V for 10 minutes, we observed a four times current increase from -0.75 to -2.8 μA at V g = -50V and V ds =50V. The current increase comes from the holes accumulation near the drain. When the source and drain were exchanged, the current decreases to the 0.08 μA, After another 10 minutes operation, the current will recover back to the original values. Such a process is reversible and shows the potential of the memory device base on this pentacene transistor.",
author = "Lin, {Chi Feng} and Chuang, {Kai Hsiang} and Chen, {Yet Min} and Lee, {Jiun Haw} and Huang, {Jian Jang} and Yu-Wu Wang",
year = "2006",
month = "12",
day = "1",
doi = "10.1117/12.678972",
language = "English",
isbn = "0819464155",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Organic Field-Effect Transistors V",

}

Lin, CF, Chuang, KH, Chen, YM, Lee, JH, Huang, JJ & Wang, Y-W 2006, Bias-dependent charge accumulation in pentacene-based thin-film transistors. in Organic Field-Effect Transistors V., 63361F, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6336, Organic Field-Effect Transistors V, San Diego, CA, United States, 06-08-13. https://doi.org/10.1117/12.678972

Bias-dependent charge accumulation in pentacene-based thin-film transistors. / Lin, Chi Feng; Chuang, Kai Hsiang; Chen, Yet Min; Lee, Jiun Haw; Huang, Jian Jang; Wang, Yu-Wu.

Organic Field-Effect Transistors V. 2006. 63361F (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6336).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Bias-dependent charge accumulation in pentacene-based thin-film transistors

AU - Lin, Chi Feng

AU - Chuang, Kai Hsiang

AU - Chen, Yet Min

AU - Lee, Jiun Haw

AU - Huang, Jian Jang

AU - Wang, Yu-Wu

PY - 2006/12/1

Y1 - 2006/12/1

N2 - In this paper, we have demonstrated the current increase with repeated measurements of I d -V ds curves with different V g values which results from the non-uniform carrier accumulation in the channel region of a pentacene-based thin film transistor (TFT). The mobility of our device reaches 0.07 cm 2 /Vs even the substrate was not heated during pentacene deposition. Besides, the devices show good air-stable properties. The magnitude of I d decreased less than 30% after exposure in air for 2 weeks. By repeating the I d -V ds measurements from 0 to -50 V with the V g values of 0, -10, -20, -30, -40, and -50 V for 10 minutes, we observed a four times current increase from -0.75 to -2.8 μA at V g = -50V and V ds =50V. The current increase comes from the holes accumulation near the drain. When the source and drain were exchanged, the current decreases to the 0.08 μA, After another 10 minutes operation, the current will recover back to the original values. Such a process is reversible and shows the potential of the memory device base on this pentacene transistor.

AB - In this paper, we have demonstrated the current increase with repeated measurements of I d -V ds curves with different V g values which results from the non-uniform carrier accumulation in the channel region of a pentacene-based thin film transistor (TFT). The mobility of our device reaches 0.07 cm 2 /Vs even the substrate was not heated during pentacene deposition. Besides, the devices show good air-stable properties. The magnitude of I d decreased less than 30% after exposure in air for 2 weeks. By repeating the I d -V ds measurements from 0 to -50 V with the V g values of 0, -10, -20, -30, -40, and -50 V for 10 minutes, we observed a four times current increase from -0.75 to -2.8 μA at V g = -50V and V ds =50V. The current increase comes from the holes accumulation near the drain. When the source and drain were exchanged, the current decreases to the 0.08 μA, After another 10 minutes operation, the current will recover back to the original values. Such a process is reversible and shows the potential of the memory device base on this pentacene transistor.

UR - http://www.scopus.com/inward/record.url?scp=33751408552&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33751408552&partnerID=8YFLogxK

U2 - 10.1117/12.678972

DO - 10.1117/12.678972

M3 - Conference contribution

AN - SCOPUS:33751408552

SN - 0819464155

SN - 9780819464156

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Organic Field-Effect Transistors V

ER -

Lin CF, Chuang KH, Chen YM, Lee JH, Huang JJ, Wang Y-W. Bias-dependent charge accumulation in pentacene-based thin-film transistors. In Organic Field-Effect Transistors V. 2006. 63361F. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.678972