Bias-dependent charge accumulation in pentacene-based thin-film transistors

Chi Feng Lin, Kai Hsiang Chuang, Yet Min Chen, Jiun Haw Lee, Jian Jang Huang, Yu-Wu Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution


In this paper, we have demonstrated the current increase with repeated measurements of I d -V ds curves with different V g values which results from the non-uniform carrier accumulation in the channel region of a pentacene-based thin film transistor (TFT). The mobility of our device reaches 0.07 cm 2 /Vs even the substrate was not heated during pentacene deposition. Besides, the devices show good air-stable properties. The magnitude of I d decreased less than 30% after exposure in air for 2 weeks. By repeating the I d -V ds measurements from 0 to -50 V with the V g values of 0, -10, -20, -30, -40, and -50 V for 10 minutes, we observed a four times current increase from -0.75 to -2.8 μA at V g = -50V and V ds =50V. The current increase comes from the holes accumulation near the drain. When the source and drain were exchanged, the current decreases to the 0.08 μA, After another 10 minutes operation, the current will recover back to the original values. Such a process is reversible and shows the potential of the memory device base on this pentacene transistor.

Original languageEnglish
Title of host publicationOrganic Field-Effect Transistors V
Publication statusPublished - 2006 Dec 1
EventOrganic Field-Effect Transistors V - San Diego, CA, United States
Duration: 2006 Aug 132006 Aug 15

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherOrganic Field-Effect Transistors V
CountryUnited States
CitySan Diego, CA

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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