Bias-dependent charge accumulation in pentacene-based thin-film transistors

Chi Feng Lin; Kai Hsiang Chuang; Yet Min Chen; Jiun Haw Lee; Jian Jang Huang; Yu-Wu Wang

doi:10.1117/12.678972

Bias-dependent charge accumulation in pentacene-based thin-film transistors

Chi Feng Lin, Kai Hsiang Chuang, Yet Min Chen, Jiun Haw Lee, Jian Jang Huang, Yu-Wu Wang

Graduate Institute of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, we have demonstrated the current increase with repeated measurements of I _d -V _ds curves with different V _g values which results from the non-uniform carrier accumulation in the channel region of a pentacene-based thin film transistor (TFT). The mobility of our device reaches 0.07 cm ² /Vs even the substrate was not heated during pentacene deposition. Besides, the devices show good air-stable properties. The magnitude of I _d decreased less than 30% after exposure in air for 2 weeks. By repeating the I _d -V _ds measurements from 0 to -50 V with the V _g values of 0, -10, -20, -30, -40, and -50 V for 10 minutes, we observed a four times current increase from -0.75 to -2.8 μA at V _g = -50V and V _ds =50V. The current increase comes from the holes accumulation near the drain. When the source and drain were exchanged, the current decreases to the 0.08 μA, After another 10 minutes operation, the current will recover back to the original values. Such a process is reversible and shows the potential of the memory device base on this pentacene transistor.

Original language	English
Title of host publication	Organic Field-Effect Transistors V
DOIs	https://doi.org/10.1117/12.678972
Publication status	Published - 2006 Dec 1
Event	Organic Field-Effect Transistors V - San Diego, CA, United States Duration: 2006 Aug 13 → 2006 Aug 15

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6336
ISSN (Print)	0277-786X

Other

Other	Organic Field-Effect Transistors V
Country	United States
City	San Diego, CA
Period	06-08-13 → 06-08-15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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@inproceedings{1ff9a1fcf8b94e85a49da72e2caf5a9c,

title = "Bias-dependent charge accumulation in pentacene-based thin-film transistors",

abstract = " In this paper, we have demonstrated the current increase with repeated measurements of I d -V ds curves with different V g values which results from the non-uniform carrier accumulation in the channel region of a pentacene-based thin film transistor (TFT). The mobility of our device reaches 0.07 cm 2 /Vs even the substrate was not heated during pentacene deposition. Besides, the devices show good air-stable properties. The magnitude of I d decreased less than 30% after exposure in air for 2 weeks. By repeating the I d -V ds measurements from 0 to -50 V with the V g values of 0, -10, -20, -30, -40, and -50 V for 10 minutes, we observed a four times current increase from -0.75 to -2.8 μA at V g = -50V and V ds =50V. The current increase comes from the holes accumulation near the drain. When the source and drain were exchanged, the current decreases to the 0.08 μA, After another 10 minutes operation, the current will recover back to the original values. Such a process is reversible and shows the potential of the memory device base on this pentacene transistor. ",

author = "Lin, {Chi Feng} and Chuang, {Kai Hsiang} and Chen, {Yet Min} and Lee, {Jiun Haw} and Huang, {Jian Jang} and Yu-Wu Wang",

year = "2006",

month = dec,

day = "1",

doi = "10.1117/12.678972",

language = "English",

isbn = "0819464155",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Organic Field-Effect Transistors V",

note = "Organic Field-Effect Transistors V ; Conference date: 13-08-2006 Through 15-08-2006",

}

Lin, CF, Chuang, KH, Chen, YM, Lee, JH, Huang, JJ & Wang, Y-W 2006, Bias-dependent charge accumulation in pentacene-based thin-film transistors. in Organic Field-Effect Transistors V., 63361F, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6336, Organic Field-Effect Transistors V, San Diego, CA, United States, 06-08-13. https://doi.org/10.1117/12.678972

Bias-dependent charge accumulation in pentacene-based thin-film transistors. / Lin, Chi Feng; Chuang, Kai Hsiang; Chen, Yet Min; Lee, Jiun Haw; Huang, Jian Jang; Wang, Yu-Wu.

Organic Field-Effect Transistors V. 2006. 63361F (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6336).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Chuang, Kai Hsiang

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AU - Huang, Jian Jang

AU - Wang, Yu-Wu

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N2 - In this paper, we have demonstrated the current increase with repeated measurements of I d -V ds curves with different V g values which results from the non-uniform carrier accumulation in the channel region of a pentacene-based thin film transistor (TFT). The mobility of our device reaches 0.07 cm 2 /Vs even the substrate was not heated during pentacene deposition. Besides, the devices show good air-stable properties. The magnitude of I d decreased less than 30% after exposure in air for 2 weeks. By repeating the I d -V ds measurements from 0 to -50 V with the V g values of 0, -10, -20, -30, -40, and -50 V for 10 minutes, we observed a four times current increase from -0.75 to -2.8 μA at V g = -50V and V ds =50V. The current increase comes from the holes accumulation near the drain. When the source and drain were exchanged, the current decreases to the 0.08 μA, After another 10 minutes operation, the current will recover back to the original values. Such a process is reversible and shows the potential of the memory device base on this pentacene transistor.

AB - In this paper, we have demonstrated the current increase with repeated measurements of I d -V ds curves with different V g values which results from the non-uniform carrier accumulation in the channel region of a pentacene-based thin film transistor (TFT). The mobility of our device reaches 0.07 cm 2 /Vs even the substrate was not heated during pentacene deposition. Besides, the devices show good air-stable properties. The magnitude of I d decreased less than 30% after exposure in air for 2 weeks. By repeating the I d -V ds measurements from 0 to -50 V with the V g values of 0, -10, -20, -30, -40, and -50 V for 10 minutes, we observed a four times current increase from -0.75 to -2.8 μA at V g = -50V and V ds =50V. The current increase comes from the holes accumulation near the drain. When the source and drain were exchanged, the current decreases to the 0.08 μA, After another 10 minutes operation, the current will recover back to the original values. Such a process is reversible and shows the potential of the memory device base on this pentacene transistor.

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