Abstract
In this paper, we have demonstrated the current increase with repeated measurements of I d -V ds curves with different V g values which results from the non-uniform carrier accumulation in the channel region of a pentacene-based thin film transistor (TFT). The mobility of our device reaches 0.07 cm 2 /Vs even the substrate was not heated during pentacene deposition. Besides, the devices show good air-stable properties. The magnitude of I d decreased less than 30% after exposure in air for 2 weeks. By repeating the I d -V ds measurements from 0 to -50 V with the V g values of 0, -10, -20, -30, -40, and -50 V for 10 minutes, we observed a four times current increase from -0.75 to -2.8 μA at V g = -50V and V ds =50V. The current increase comes from the holes accumulation near the drain. When the source and drain were exchanged, the current decreases to the 0.08 μA, After another 10 minutes operation, the current will recover back to the original values. Such a process is reversible and shows the potential of the memory device base on this pentacene transistor.
| Original language | English |
|---|---|
| Title of host publication | Organic Field-Effect Transistors V |
| DOIs | |
| Publication status | Published - 2006 Dec 1 |
| Event | Organic Field-Effect Transistors V - San Diego, CA, United States Duration: 2006 Aug 13 → 2006 Aug 15 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Volume | 6336 |
| ISSN (Print) | 0277-786X |
Other
| Other | Organic Field-Effect Transistors V |
|---|---|
| Country | United States |
| City | San Diego, CA |
| Period | 06-08-13 → 06-08-15 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Cite this
}
Bias-dependent charge accumulation in pentacene-based thin-film transistors. / Lin, Chi Feng; Chuang, Kai Hsiang; Chen, Yet Min; Lee, Jiun Haw; Huang, Jian Jang; Wang, Yu-Wu.
Organic Field-Effect Transistors V. 2006. 63361F (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6336).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Bias-dependent charge accumulation in pentacene-based thin-film transistors
AU - Lin, Chi Feng
AU - Chuang, Kai Hsiang
AU - Chen, Yet Min
AU - Lee, Jiun Haw
AU - Huang, Jian Jang
AU - Wang, Yu-Wu
PY - 2006/12/1
Y1 - 2006/12/1
N2 - In this paper, we have demonstrated the current increase with repeated measurements of I d -V ds curves with different V g values which results from the non-uniform carrier accumulation in the channel region of a pentacene-based thin film transistor (TFT). The mobility of our device reaches 0.07 cm 2 /Vs even the substrate was not heated during pentacene deposition. Besides, the devices show good air-stable properties. The magnitude of I d decreased less than 30% after exposure in air for 2 weeks. By repeating the I d -V ds measurements from 0 to -50 V with the V g values of 0, -10, -20, -30, -40, and -50 V for 10 minutes, we observed a four times current increase from -0.75 to -2.8 μA at V g = -50V and V ds =50V. The current increase comes from the holes accumulation near the drain. When the source and drain were exchanged, the current decreases to the 0.08 μA, After another 10 minutes operation, the current will recover back to the original values. Such a process is reversible and shows the potential of the memory device base on this pentacene transistor.
AB - In this paper, we have demonstrated the current increase with repeated measurements of I d -V ds curves with different V g values which results from the non-uniform carrier accumulation in the channel region of a pentacene-based thin film transistor (TFT). The mobility of our device reaches 0.07 cm 2 /Vs even the substrate was not heated during pentacene deposition. Besides, the devices show good air-stable properties. The magnitude of I d decreased less than 30% after exposure in air for 2 weeks. By repeating the I d -V ds measurements from 0 to -50 V with the V g values of 0, -10, -20, -30, -40, and -50 V for 10 minutes, we observed a four times current increase from -0.75 to -2.8 μA at V g = -50V and V ds =50V. The current increase comes from the holes accumulation near the drain. When the source and drain were exchanged, the current decreases to the 0.08 μA, After another 10 minutes operation, the current will recover back to the original values. Such a process is reversible and shows the potential of the memory device base on this pentacene transistor.
UR - http://www.scopus.com/inward/record.url?scp=33751408552&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33751408552&partnerID=8YFLogxK
U2 - 10.1117/12.678972
DO - 10.1117/12.678972
M3 - Conference contribution
AN - SCOPUS:33751408552
SN - 0819464155
SN - 9780819464156
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Organic Field-Effect Transistors V
ER -