Behavior of the first layer growth in GaAs molecular beam epitaxy

D. G. Liu, C. P. Lee, K. H. Chang, Jenq-Shinn Wu, D. C. Liou

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The first layer growth in GaAs molecular beam epitaxy has been studied by reflection high-energy electron diffraction (RHEED). The time between the growth start and the first RHEED intensity peak is found to be dependent on the starting surface condition and is different from the time needed for a single layer growth. Periodic flux interruption has been used to study the surface recovery behavior as a function of growth time. When the growth time is the same as the time for a single layer growth, sustained two-dimensional growth can be obtained.

Original languageEnglish
Pages (from-to)1392-1394
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number14
DOIs
Publication statusPublished - 1990 Dec 1

Fingerprint

molecular beam epitaxy
high energy electrons
electron diffraction
interruption
recovery

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Liu, D. G. ; Lee, C. P. ; Chang, K. H. ; Wu, Jenq-Shinn ; Liou, D. C. / Behavior of the first layer growth in GaAs molecular beam epitaxy. In: Applied Physics Letters. 1990 ; Vol. 57, No. 14. pp. 1392-1394.
@article{0b9d9c13cd4f4b7b9b8004a36b92c85f,
title = "Behavior of the first layer growth in GaAs molecular beam epitaxy",
abstract = "The first layer growth in GaAs molecular beam epitaxy has been studied by reflection high-energy electron diffraction (RHEED). The time between the growth start and the first RHEED intensity peak is found to be dependent on the starting surface condition and is different from the time needed for a single layer growth. Periodic flux interruption has been used to study the surface recovery behavior as a function of growth time. When the growth time is the same as the time for a single layer growth, sustained two-dimensional growth can be obtained.",
author = "Liu, {D. G.} and Lee, {C. P.} and Chang, {K. H.} and Jenq-Shinn Wu and Liou, {D. C.}",
year = "1990",
month = "12",
day = "1",
doi = "10.1063/1.103445",
language = "English",
volume = "57",
pages = "1392--1394",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "14",

}

Behavior of the first layer growth in GaAs molecular beam epitaxy. / Liu, D. G.; Lee, C. P.; Chang, K. H.; Wu, Jenq-Shinn; Liou, D. C.

In: Applied Physics Letters, Vol. 57, No. 14, 01.12.1990, p. 1392-1394.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Behavior of the first layer growth in GaAs molecular beam epitaxy

AU - Liu, D. G.

AU - Lee, C. P.

AU - Chang, K. H.

AU - Wu, Jenq-Shinn

AU - Liou, D. C.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - The first layer growth in GaAs molecular beam epitaxy has been studied by reflection high-energy electron diffraction (RHEED). The time between the growth start and the first RHEED intensity peak is found to be dependent on the starting surface condition and is different from the time needed for a single layer growth. Periodic flux interruption has been used to study the surface recovery behavior as a function of growth time. When the growth time is the same as the time for a single layer growth, sustained two-dimensional growth can be obtained.

AB - The first layer growth in GaAs molecular beam epitaxy has been studied by reflection high-energy electron diffraction (RHEED). The time between the growth start and the first RHEED intensity peak is found to be dependent on the starting surface condition and is different from the time needed for a single layer growth. Periodic flux interruption has been used to study the surface recovery behavior as a function of growth time. When the growth time is the same as the time for a single layer growth, sustained two-dimensional growth can be obtained.

UR - http://www.scopus.com/inward/record.url?scp=36549100128&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549100128&partnerID=8YFLogxK

U2 - 10.1063/1.103445

DO - 10.1063/1.103445

M3 - Article

AN - SCOPUS:36549100128

VL - 57

SP - 1392

EP - 1394

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

ER -