Behavior of the first layer growth in GaAs molecular beam epitaxy

D. G. Liu, C. P. Lee, K. H. Chang, Jenq-Shinn Wu, D. C. Liou

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Abstract

The first layer growth in GaAs molecular beam epitaxy has been studied by reflection high-energy electron diffraction (RHEED). The time between the growth start and the first RHEED intensity peak is found to be dependent on the starting surface condition and is different from the time needed for a single layer growth. Periodic flux interruption has been used to study the surface recovery behavior as a function of growth time. When the growth time is the same as the time for a single layer growth, sustained two-dimensional growth can be obtained.

Original languageEnglish
Pages (from-to)1392-1394
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number14
DOIs
Publication statusPublished - 1990 Dec 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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