Behavior of carrier transports and their sensitivity to solar irradiation for devices that use MoS2 that is directly deposited on Si using the chemical vapor method

Yow-Jon Lin, Ting Hong Su, Shang Min Chen

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

To fabricate a MoS2/Si device, layers of MoS2 are directly deposited on an n-type Si substrate by chemical vapor deposition (CVD). No transfer processes are needed. The MoS2 thin film that is deposited on the n-type Si substrate exhibits p-type behavior and the MoS2/Si device exhibits stable rectification behavior. It is found that the thermionic emission–diffusion model is the dominant process in this fabricated MoS2/Si device. The MoS2/Si device also exhibits high sensitivity to solar irradiation. Because of the low reflectance values for the MoS2/Si samples, the enhanced sensitivity is due to high external light injection efficiency. This study provides valuable scientific information for multiple layered MoS2 films for other electronic and optoelectronic applications.

Original languageEnglish
Pages (from-to)14430-14435
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Volume28
Issue number19
DOIs
Publication statusPublished - 2017 Oct 1

Fingerprint

Carrier transport
Vapors
Irradiation
vapors
irradiation
sensitivity
Substrates
Optoelectronic devices
Chemical vapor deposition
Thin films
thermionics
rectification
vapor deposition
injection
reflectance
thin films
electronics

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "To fabricate a MoS2/Si device, layers of MoS2 are directly deposited on an n-type Si substrate by chemical vapor deposition (CVD). No transfer processes are needed. The MoS2 thin film that is deposited on the n-type Si substrate exhibits p-type behavior and the MoS2/Si device exhibits stable rectification behavior. It is found that the thermionic emission–diffusion model is the dominant process in this fabricated MoS2/Si device. The MoS2/Si device also exhibits high sensitivity to solar irradiation. Because of the low reflectance values for the MoS2/Si samples, the enhanced sensitivity is due to high external light injection efficiency. This study provides valuable scientific information for multiple layered MoS2 films for other electronic and optoelectronic applications.",
author = "Yow-Jon Lin and Su, {Ting Hong} and Chen, {Shang Min}",
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T1 - Behavior of carrier transports and their sensitivity to solar irradiation for devices that use MoS2 that is directly deposited on Si using the chemical vapor method

AU - Lin, Yow-Jon

AU - Su, Ting Hong

AU - Chen, Shang Min

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AB - To fabricate a MoS2/Si device, layers of MoS2 are directly deposited on an n-type Si substrate by chemical vapor deposition (CVD). No transfer processes are needed. The MoS2 thin film that is deposited on the n-type Si substrate exhibits p-type behavior and the MoS2/Si device exhibits stable rectification behavior. It is found that the thermionic emission–diffusion model is the dominant process in this fabricated MoS2/Si device. The MoS2/Si device also exhibits high sensitivity to solar irradiation. Because of the low reflectance values for the MoS2/Si samples, the enhanced sensitivity is due to high external light injection efficiency. This study provides valuable scientific information for multiple layered MoS2 films for other electronic and optoelectronic applications.

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