Behavior of carrier transports and responsivity to solar irradiation for poly(3-hexylthiophene)/silicon devices with and without the insertion of silicon nanowires and the addition of black phosphorus

Yow Jon Lin, Hong Zhi Lin, Hsing Cheng Chang, Ya Hui Chen

Research output: Contribution to journalArticle

Abstract

The effects of the insertion of the silicon nanowire (SiNW) array and the incorporation of black phosphorus (BP) powders into poly(3-hexylthiophene) (P3HT) on the behavior of carrier transports and the responsivity to solar irradiation for P3HT/n-type Si (n-Si) devices are studied. It is found that thermionic emission and space charge limited current influence the forward current–voltage characteristics of P3HT/n-type Si devices. However, for P3HT/SiNWs/n-Si or P3HT:BP/SiNWs/n-Si devices, carrier transport in the forward-voltage region is dominated by ohmic conduction. In contrast with the P3HT/n-Si device, the P3HT:BP/SiNWs/n-Si device exhibits the lower reflectance, poorer rectification behavior and higher responsivity to solar irradiation, indicating that the increased photocurrent density can be interpreted by the high external light injection efficiency and the high carrier mobility in the P3HT:BP layer.

Original languageEnglish
Pages (from-to)112-116
Number of pages5
JournalThin Solid Films
Volume646
DOIs
Publication statusPublished - 2018 Jan 31

Fingerprint

Carrier transport
Silicon
Powders
Phosphorus
Nanowires
phosphorus
insertion
nanowires
Irradiation
irradiation
silicon
Thermionic emission
poly(3-hexylthiophene)
thermionic emission
Carrier mobility
rectification
carrier mobility
Photocurrents
Electric space charge
photocurrents

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Behavior of carrier transports and responsivity to solar irradiation for poly(3-hexylthiophene)/silicon devices with and without the insertion of silicon nanowires and the addition of black phosphorus",
abstract = "The effects of the insertion of the silicon nanowire (SiNW) array and the incorporation of black phosphorus (BP) powders into poly(3-hexylthiophene) (P3HT) on the behavior of carrier transports and the responsivity to solar irradiation for P3HT/n-type Si (n-Si) devices are studied. It is found that thermionic emission and space charge limited current influence the forward current–voltage characteristics of P3HT/n-type Si devices. However, for P3HT/SiNWs/n-Si or P3HT:BP/SiNWs/n-Si devices, carrier transport in the forward-voltage region is dominated by ohmic conduction. In contrast with the P3HT/n-Si device, the P3HT:BP/SiNWs/n-Si device exhibits the lower reflectance, poorer rectification behavior and higher responsivity to solar irradiation, indicating that the increased photocurrent density can be interpreted by the high external light injection efficiency and the high carrier mobility in the P3HT:BP layer.",
author = "Lin, {Yow Jon} and Lin, {Hong Zhi} and Chang, {Hsing Cheng} and Chen, {Ya Hui}",
year = "2018",
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journal = "Thin Solid Films",
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T1 - Behavior of carrier transports and responsivity to solar irradiation for poly(3-hexylthiophene)/silicon devices with and without the insertion of silicon nanowires and the addition of black phosphorus

AU - Lin, Yow Jon

AU - Lin, Hong Zhi

AU - Chang, Hsing Cheng

AU - Chen, Ya Hui

PY - 2018/1/31

Y1 - 2018/1/31

N2 - The effects of the insertion of the silicon nanowire (SiNW) array and the incorporation of black phosphorus (BP) powders into poly(3-hexylthiophene) (P3HT) on the behavior of carrier transports and the responsivity to solar irradiation for P3HT/n-type Si (n-Si) devices are studied. It is found that thermionic emission and space charge limited current influence the forward current–voltage characteristics of P3HT/n-type Si devices. However, for P3HT/SiNWs/n-Si or P3HT:BP/SiNWs/n-Si devices, carrier transport in the forward-voltage region is dominated by ohmic conduction. In contrast with the P3HT/n-Si device, the P3HT:BP/SiNWs/n-Si device exhibits the lower reflectance, poorer rectification behavior and higher responsivity to solar irradiation, indicating that the increased photocurrent density can be interpreted by the high external light injection efficiency and the high carrier mobility in the P3HT:BP layer.

AB - The effects of the insertion of the silicon nanowire (SiNW) array and the incorporation of black phosphorus (BP) powders into poly(3-hexylthiophene) (P3HT) on the behavior of carrier transports and the responsivity to solar irradiation for P3HT/n-type Si (n-Si) devices are studied. It is found that thermionic emission and space charge limited current influence the forward current–voltage characteristics of P3HT/n-type Si devices. However, for P3HT/SiNWs/n-Si or P3HT:BP/SiNWs/n-Si devices, carrier transport in the forward-voltage region is dominated by ohmic conduction. In contrast with the P3HT/n-Si device, the P3HT:BP/SiNWs/n-Si device exhibits the lower reflectance, poorer rectification behavior and higher responsivity to solar irradiation, indicating that the increased photocurrent density can be interpreted by the high external light injection efficiency and the high carrier mobility in the P3HT:BP layer.

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