Band gap engineering of chemical vapor deposited graphene by in situ BN doping

Cheng Kai Chang, Satender Kataria, Chun Chiang Kuo, Abhijit Ganguly, Bo Yao Wang, Jeong Yuan Hwang, Kay Jay Huang, Wei Hsun Yang, Sheng Bo Wang, Cheng Hao Chuang, Mi Chen, Ching I. Huang, Way Faung Pong, Ker Jar Song, Shoou Jinn Chang, Jing Hua Guo, Yian Tai, Masahiko Tsujimoto, Seiji Isoda, Chun Wei Chen & 2 others Li Chyong Chen, Kuei Hsien Chen

Research output: Contribution to journalArticle

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Abstract

Band gap opening and engineering is one of the high priority goals in the development of graphene electronics. Here, we report on the opening and scaling of band gap in BN doped graphene (BNG) films grown by low-pressure chemical vapor deposition method. High resolution transmission electron microscopy is employed to resolve the graphene and h-BN domain formation in great detail. X-ray photoelectron, micro-Raman, and UV-vis spectroscopy studies revealed a distinct structural and phase evolution in BNG films at low BN concentration. Synchrotron radiation based XAS-XES measurements concluded a gap opening in BNG films, which is also confirmed by field effect transistor measurements. For the first time, a significant band gap as high as 600 meV is observed for low BN concentrations and is attributed to the opening of the π-π* band gap of graphene due to isoelectronic BN doping. As-grown films exhibit structural evolution from homogeneously dispersed small BN clusters to large sized BN domains with embedded diminutive graphene domains. The evolution is described in terms of competitive growth among h-BN and graphene domains with increasing BN concentration. The present results pave way for the development of band gap engineered BN doped graphene-based devices.

Original languageEnglish
Pages (from-to)1333-1341
Number of pages9
JournalACS Nano
Volume7
Issue number2
DOIs
Publication statusPublished - 2013 Feb 26

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Graphite
Graphene
graphene
Energy gap
Vapors
Doping (additives)
engineering
vapors
low concentrations
Low pressure chemical vapor deposition
Field effect transistors
High resolution transmission electron microscopy
Photoelectrons
Synchrotron radiation
Ultraviolet spectroscopy
synchrotron radiation
photoelectrons
Electronic equipment
field effect transistors
low pressure

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Chang, C. K., Kataria, S., Kuo, C. C., Ganguly, A., Wang, B. Y., Hwang, J. Y., ... Chen, K. H. (2013). Band gap engineering of chemical vapor deposited graphene by in situ BN doping. ACS Nano, 7(2), 1333-1341. https://doi.org/10.1021/nn3049158
Chang, Cheng Kai ; Kataria, Satender ; Kuo, Chun Chiang ; Ganguly, Abhijit ; Wang, Bo Yao ; Hwang, Jeong Yuan ; Huang, Kay Jay ; Yang, Wei Hsun ; Wang, Sheng Bo ; Chuang, Cheng Hao ; Chen, Mi ; Huang, Ching I. ; Pong, Way Faung ; Song, Ker Jar ; Chang, Shoou Jinn ; Guo, Jing Hua ; Tai, Yian ; Tsujimoto, Masahiko ; Isoda, Seiji ; Chen, Chun Wei ; Chen, Li Chyong ; Chen, Kuei Hsien. / Band gap engineering of chemical vapor deposited graphene by in situ BN doping. In: ACS Nano. 2013 ; Vol. 7, No. 2. pp. 1333-1341.
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abstract = "Band gap opening and engineering is one of the high priority goals in the development of graphene electronics. Here, we report on the opening and scaling of band gap in BN doped graphene (BNG) films grown by low-pressure chemical vapor deposition method. High resolution transmission electron microscopy is employed to resolve the graphene and h-BN domain formation in great detail. X-ray photoelectron, micro-Raman, and UV-vis spectroscopy studies revealed a distinct structural and phase evolution in BNG films at low BN concentration. Synchrotron radiation based XAS-XES measurements concluded a gap opening in BNG films, which is also confirmed by field effect transistor measurements. For the first time, a significant band gap as high as 600 meV is observed for low BN concentrations and is attributed to the opening of the π-π* band gap of graphene due to isoelectronic BN doping. As-grown films exhibit structural evolution from homogeneously dispersed small BN clusters to large sized BN domains with embedded diminutive graphene domains. The evolution is described in terms of competitive growth among h-BN and graphene domains with increasing BN concentration. The present results pave way for the development of band gap engineered BN doped graphene-based devices.",
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Chang, CK, Kataria, S, Kuo, CC, Ganguly, A, Wang, BY, Hwang, JY, Huang, KJ, Yang, WH, Wang, SB, Chuang, CH, Chen, M, Huang, CI, Pong, WF, Song, KJ, Chang, SJ, Guo, JH, Tai, Y, Tsujimoto, M, Isoda, S, Chen, CW, Chen, LC & Chen, KH 2013, 'Band gap engineering of chemical vapor deposited graphene by in situ BN doping', ACS Nano, vol. 7, no. 2, pp. 1333-1341. https://doi.org/10.1021/nn3049158

Band gap engineering of chemical vapor deposited graphene by in situ BN doping. / Chang, Cheng Kai; Kataria, Satender; Kuo, Chun Chiang; Ganguly, Abhijit; Wang, Bo Yao; Hwang, Jeong Yuan; Huang, Kay Jay; Yang, Wei Hsun; Wang, Sheng Bo; Chuang, Cheng Hao; Chen, Mi; Huang, Ching I.; Pong, Way Faung; Song, Ker Jar; Chang, Shoou Jinn; Guo, Jing Hua; Tai, Yian; Tsujimoto, Masahiko; Isoda, Seiji; Chen, Chun Wei; Chen, Li Chyong; Chen, Kuei Hsien.

In: ACS Nano, Vol. 7, No. 2, 26.02.2013, p. 1333-1341.

Research output: Contribution to journalArticle

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AU - Chang, Cheng Kai

AU - Kataria, Satender

AU - Kuo, Chun Chiang

AU - Ganguly, Abhijit

AU - Wang, Bo Yao

AU - Hwang, Jeong Yuan

AU - Huang, Kay Jay

AU - Yang, Wei Hsun

AU - Wang, Sheng Bo

AU - Chuang, Cheng Hao

AU - Chen, Mi

AU - Huang, Ching I.

AU - Pong, Way Faung

AU - Song, Ker Jar

AU - Chang, Shoou Jinn

AU - Guo, Jing Hua

AU - Tai, Yian

AU - Tsujimoto, Masahiko

AU - Isoda, Seiji

AU - Chen, Chun Wei

AU - Chen, Li Chyong

AU - Chen, Kuei Hsien

PY - 2013/2/26

Y1 - 2013/2/26

N2 - Band gap opening and engineering is one of the high priority goals in the development of graphene electronics. Here, we report on the opening and scaling of band gap in BN doped graphene (BNG) films grown by low-pressure chemical vapor deposition method. High resolution transmission electron microscopy is employed to resolve the graphene and h-BN domain formation in great detail. X-ray photoelectron, micro-Raman, and UV-vis spectroscopy studies revealed a distinct structural and phase evolution in BNG films at low BN concentration. Synchrotron radiation based XAS-XES measurements concluded a gap opening in BNG films, which is also confirmed by field effect transistor measurements. For the first time, a significant band gap as high as 600 meV is observed for low BN concentrations and is attributed to the opening of the π-π* band gap of graphene due to isoelectronic BN doping. As-grown films exhibit structural evolution from homogeneously dispersed small BN clusters to large sized BN domains with embedded diminutive graphene domains. The evolution is described in terms of competitive growth among h-BN and graphene domains with increasing BN concentration. The present results pave way for the development of band gap engineered BN doped graphene-based devices.

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Chang CK, Kataria S, Kuo CC, Ganguly A, Wang BY, Hwang JY et al. Band gap engineering of chemical vapor deposited graphene by in situ BN doping. ACS Nano. 2013 Feb 26;7(2):1333-1341. https://doi.org/10.1021/nn3049158