The band-gap bowing parameters of unstrained zincblende ternary III-nitride alloys are investigated numerically with the CASTEP simulation program. Direct and indirect band-gap bowing parameters of 1.379 eV and 1.672 eV for In xGa1-xN, 0.755 eV and 0.296 eV for AlxGa 1-xN, and 2.729 eV and 3.624 eV for AlxIn1-xN are obtained. Simulation results show that the direct band-gap energy is always smaller than its indirect counterpart for InxGa1-xN, indicating that the zincblende InxGa1-xN is a direct band-gap semiconductor. There is a direct-indirect crossover near x = 0.571 for AlxGa1-xN, and x = 0.244 for AlxIn 1-xN. The relationship between band-gap energy and lattice constant for zincblende InxGa1-xN, AlxGa1-xN, and AlxIn1-xN is also provided.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Publication status||Published - 2004 Jan|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)