Band-gap bowing parameter of the InxGa1-xN derived from theoretical simulation

Y. K. Kuo, W. W. Lin, J. Lin

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The band-gap energy and band-gap bowing parameter of the wurtzite InGaN alloys are investigated numerically with the CASTEP simulation program. The simulation results suggest that the unstrained band-gap bowing parameter for the wurtzite InGaN alloys is b = 1.21 ± 0.03 eV. The simulation results also show that the width of the InxGa1-xN top valence band at the Γ point decreases when the indium composition increases and has a value of 7.331 eV for the GaN (x = 0) and 6.972 eV for the In0.375Ga0.625N (x = 0.375).

Original languageEnglish
Pages (from-to)3157-3158
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number5 A
DOIs
Publication statusPublished - 2001 May

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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