Band-gap bowing parameter of the AlxGa1-xN derived from theoretical simulation

Yen Kuang Kuo; Wen Wei Lin

doi:10.1143/JJAP.41.73

Band-gap bowing parameter of the Al_xGa_1-xN derived from theoretical simulation

Yen Kuang Kuo, Wen Wei Lin

Department of Physics

Research output: Contribution to journal › Article

20 Citations (Scopus)

Abstract

The band-gap energy and band-gap bowing parameter of the wurtzite AlGaN alloys are investigated numerically with the CASTEP simulation program. The simulation results suggest that the unstrained band-gap bowing parameter of the wurtzite AlGaN alloys is b = 0.353 ± 0.024 eV. The simulation results also show that the width of the Al_xGa_1-xN top valence band at the Γ point decreases when the aluminum composition increases and has a value of 7.331 eV for the GaN (x = 0) and 6.132 eV for the AlN (x = 1).

Original language	English
Pages (from-to)	73-74
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	41
Issue number	1
DOIs	https://doi.org/10.1143/JJAP.41.73
Publication status	Published - 2002 Jan 1

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All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Cite this

Kuo, Y. K., & Lin, W. W. (2002). Band-gap bowing parameter of the Al_xGa_1-xN derived from theoretical simulation. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 41(1), 73-74. https://doi.org/10.1143/JJAP.41.73

@article{5462b119b4c3401a96a28e718b0fc6f8,

title = "Band-gap bowing parameter of the AlxGa1-xN derived from theoretical simulation",

abstract = "The band-gap energy and band-gap bowing parameter of the wurtzite AlGaN alloys are investigated numerically with the CASTEP simulation program. The simulation results suggest that the unstrained band-gap bowing parameter of the wurtzite AlGaN alloys is b = 0.353 ± 0.024 eV. The simulation results also show that the width of the AlxGa1-xN top valence band at the Γ point decreases when the aluminum composition increases and has a value of 7.331 eV for the GaN (x = 0) and 6.132 eV for the AlN (x = 1).",

author = "Kuo, {Yen Kuang} and Lin, {Wen Wei}",

year = "2002",

month = jan

day = "1",

doi = "10.1143/JJAP.41.73",

language = "English",

volume = "41",

pages = "73--74",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "1",

}

TY - JOUR

T1 - Band-gap bowing parameter of the AlxGa1-xN derived from theoretical simulation

AU - Kuo, Yen Kuang

AU - Lin, Wen Wei

PY - 2002/1/1

Y1 - 2002/1/1

N2 - The band-gap energy and band-gap bowing parameter of the wurtzite AlGaN alloys are investigated numerically with the CASTEP simulation program. The simulation results suggest that the unstrained band-gap bowing parameter of the wurtzite AlGaN alloys is b = 0.353 ± 0.024 eV. The simulation results also show that the width of the AlxGa1-xN top valence band at the Γ point decreases when the aluminum composition increases and has a value of 7.331 eV for the GaN (x = 0) and 6.132 eV for the AlN (x = 1).

AB - The band-gap energy and band-gap bowing parameter of the wurtzite AlGaN alloys are investigated numerically with the CASTEP simulation program. The simulation results suggest that the unstrained band-gap bowing parameter of the wurtzite AlGaN alloys is b = 0.353 ± 0.024 eV. The simulation results also show that the width of the AlxGa1-xN top valence band at the Γ point decreases when the aluminum composition increases and has a value of 7.331 eV for the GaN (x = 0) and 6.132 eV for the AlN (x = 1).

UR - http://www.scopus.com/inward/record.url?scp=0036314380&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036314380&partnerID=8YFLogxK

U2 - 10.1143/JJAP.41.73

DO - 10.1143/JJAP.41.73

M3 - Article

VL - 41

SP - 73

EP - 74

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 1

ER -

Access to Document

10.1143/JJAP.41.73