Abstract
Auger recombination of dual-wavelength emission in monolithic InGaN light-emitting diodes (LEDs) is numerically investigated. Simulation results show that effective suppression of Auger recombination plays an important role toward the realization of dual-wavelength emission in InGaN LEDs. With appropriate design, the carriers in active region can be spatially and spectrally balanced and thereby effective dual-wavelength emission can be achieved.
Original language | English |
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Article number | 7523243 |
Pages (from-to) | 1398-1402 |
Number of pages | 5 |
Journal | Journal of Display Technology |
Volume | 12 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2016 Nov 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering