Auger Recombination in Monolithic Dual-Wavelength InGaN Light-Emitting Diodes

Yen-Kuang Kuo; Tsun Hsin Wang; Yi An Chang; Jih-Yuan Chang; Fang Ming Chen; Ya Hsuan Shih

doi:10.1109/JDT.2016.2594044

Auger Recombination in Monolithic Dual-Wavelength InGaN Light-Emitting Diodes

Yen-Kuang Kuo, Tsun Hsin Wang, Yi An Chang, Jih-Yuan Chang, Fang Ming Chen, Ya Hsuan Shih

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

Auger recombination of dual-wavelength emission in monolithic InGaN light-emitting diodes (LEDs) is numerically investigated. Simulation results show that effective suppression of Auger recombination plays an important role toward the realization of dual-wavelength emission in InGaN LEDs. With appropriate design, the carriers in active region can be spatially and spectrally balanced and thereby effective dual-wavelength emission can be achieved.

Original language	English
Article number	7523243
Pages (from-to)	1398-1402
Number of pages	5
Journal	Journal of Display Technology
Volume	12
Issue number	11
DOIs	https://doi.org/10.1109/JDT.2016.2594044
Publication status	Published - 2016 Nov 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

Kuo, Y-K., Wang, T. H., Chang, Y. A., Chang, J-Y., Chen, F. M., & Shih, Y. H. (2016). Auger Recombination in Monolithic Dual-Wavelength InGaN Light-Emitting Diodes. Journal of Display Technology, 12(11), 1398-1402. [7523243]. https://doi.org/10.1109/JDT.2016.2594044

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AU - Chen, Fang Ming

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10.1109/JDT.2016.2594044