Abstract
Auger recombination of dual-wavelength emission in monolithic InGaN light-emitting diodes (LEDs) is numerically investigated. Simulation results show that effective suppression of Auger recombination plays an important role toward the realization of dual-wavelength emission in InGaN LEDs. With appropriate design, the carriers in active region can be spatially and spectrally balanced and thereby effective dual-wavelength emission can be achieved.
| Original language | English |
|---|---|
| Article number | 7523243 |
| Pages (from-to) | 1398-1402 |
| Number of pages | 5 |
| Journal | Journal of Display Technology |
| Volume | 12 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2016 Nov 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
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Auger Recombination in Monolithic Dual-Wavelength InGaN Light-Emitting Diodes. / Kuo, Yen-Kuang; Wang, Tsun Hsin; Chang, Yi An; Chang, Jih-Yuan; Chen, Fang Ming; Shih, Ya Hsuan.
In: Journal of Display Technology, Vol. 12, No. 11, 7523243, 01.11.2016, p. 1398-1402.Research output: Contribution to journal › Article
TY - JOUR
T1 - Auger Recombination in Monolithic Dual-Wavelength InGaN Light-Emitting Diodes
AU - Kuo, Yen-Kuang
AU - Wang, Tsun Hsin
AU - Chang, Yi An
AU - Chang, Jih-Yuan
AU - Chen, Fang Ming
AU - Shih, Ya Hsuan
PY - 2016/11/1
Y1 - 2016/11/1
N2 - Auger recombination of dual-wavelength emission in monolithic InGaN light-emitting diodes (LEDs) is numerically investigated. Simulation results show that effective suppression of Auger recombination plays an important role toward the realization of dual-wavelength emission in InGaN LEDs. With appropriate design, the carriers in active region can be spatially and spectrally balanced and thereby effective dual-wavelength emission can be achieved.
AB - Auger recombination of dual-wavelength emission in monolithic InGaN light-emitting diodes (LEDs) is numerically investigated. Simulation results show that effective suppression of Auger recombination plays an important role toward the realization of dual-wavelength emission in InGaN LEDs. With appropriate design, the carriers in active region can be spatially and spectrally balanced and thereby effective dual-wavelength emission can be achieved.
UR - http://www.scopus.com/inward/record.url?scp=84994481771&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84994481771&partnerID=8YFLogxK
U2 - 10.1109/JDT.2016.2594044
DO - 10.1109/JDT.2016.2594044
M3 - Article
AN - SCOPUS:84994481771
VL - 12
SP - 1398
EP - 1402
JO - IEEE/OSA Journal of Display Technology
JF - IEEE/OSA Journal of Display Technology
SN - 1551-319X
IS - 11
M1 - 7523243
ER -