Auger Recombination in Monolithic Dual-Wavelength InGaN Light-Emitting Diodes

Yen-Kuang Kuo, Tsun Hsin Wang, Yi An Chang, Jih-Yuan Chang, Fang Ming Chen, Ya Hsuan Shih

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Abstract

Auger recombination of dual-wavelength emission in monolithic InGaN light-emitting diodes (LEDs) is numerically investigated. Simulation results show that effective suppression of Auger recombination plays an important role toward the realization of dual-wavelength emission in InGaN LEDs. With appropriate design, the carriers in active region can be spatially and spectrally balanced and thereby effective dual-wavelength emission can be achieved.

Original languageEnglish
Article number7523243
Pages (from-to)1398-1402
Number of pages5
JournalJournal of Display Technology
Volume12
Issue number11
DOIs
Publication statusPublished - 2016 Nov 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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