Auger Recombination in Monolithic Dual-Wavelength InGaN Light-Emitting Diodes

Yen-Kuang Kuo, Tsun Hsin Wang, Yi An Chang, Jih-Yuan Chang, Fang Ming Chen, Ya Hsuan Shih

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Auger recombination of dual-wavelength emission in monolithic InGaN light-emitting diodes (LEDs) is numerically investigated. Simulation results show that effective suppression of Auger recombination plays an important role toward the realization of dual-wavelength emission in InGaN LEDs. With appropriate design, the carriers in active region can be spatially and spectrally balanced and thereby effective dual-wavelength emission can be achieved.

Original languageEnglish
Article number7523243
Pages (from-to)1398-1402
Number of pages5
JournalJournal of Display Technology
Volume12
Issue number11
DOIs
Publication statusPublished - 2016 Nov 1

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Light emitting diodes
light emitting diodes
Wavelength
wavelengths
retarding
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Kuo, Yen-Kuang ; Wang, Tsun Hsin ; Chang, Yi An ; Chang, Jih-Yuan ; Chen, Fang Ming ; Shih, Ya Hsuan. / Auger Recombination in Monolithic Dual-Wavelength InGaN Light-Emitting Diodes. In: Journal of Display Technology. 2016 ; Vol. 12, No. 11. pp. 1398-1402.
@article{a0d84f62f83b43a2aa03346f21c55da8,
title = "Auger Recombination in Monolithic Dual-Wavelength InGaN Light-Emitting Diodes",
abstract = "Auger recombination of dual-wavelength emission in monolithic InGaN light-emitting diodes (LEDs) is numerically investigated. Simulation results show that effective suppression of Auger recombination plays an important role toward the realization of dual-wavelength emission in InGaN LEDs. With appropriate design, the carriers in active region can be spatially and spectrally balanced and thereby effective dual-wavelength emission can be achieved.",
author = "Yen-Kuang Kuo and Wang, {Tsun Hsin} and Chang, {Yi An} and Jih-Yuan Chang and Chen, {Fang Ming} and Shih, {Ya Hsuan}",
year = "2016",
month = "11",
day = "1",
doi = "10.1109/JDT.2016.2594044",
language = "English",
volume = "12",
pages = "1398--1402",
journal = "IEEE/OSA Journal of Display Technology",
issn = "1551-319X",
publisher = "IEEE Computer Society",
number = "11",

}

Auger Recombination in Monolithic Dual-Wavelength InGaN Light-Emitting Diodes. / Kuo, Yen-Kuang; Wang, Tsun Hsin; Chang, Yi An; Chang, Jih-Yuan; Chen, Fang Ming; Shih, Ya Hsuan.

In: Journal of Display Technology, Vol. 12, No. 11, 7523243, 01.11.2016, p. 1398-1402.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Auger Recombination in Monolithic Dual-Wavelength InGaN Light-Emitting Diodes

AU - Kuo, Yen-Kuang

AU - Wang, Tsun Hsin

AU - Chang, Yi An

AU - Chang, Jih-Yuan

AU - Chen, Fang Ming

AU - Shih, Ya Hsuan

PY - 2016/11/1

Y1 - 2016/11/1

N2 - Auger recombination of dual-wavelength emission in monolithic InGaN light-emitting diodes (LEDs) is numerically investigated. Simulation results show that effective suppression of Auger recombination plays an important role toward the realization of dual-wavelength emission in InGaN LEDs. With appropriate design, the carriers in active region can be spatially and spectrally balanced and thereby effective dual-wavelength emission can be achieved.

AB - Auger recombination of dual-wavelength emission in monolithic InGaN light-emitting diodes (LEDs) is numerically investigated. Simulation results show that effective suppression of Auger recombination plays an important role toward the realization of dual-wavelength emission in InGaN LEDs. With appropriate design, the carriers in active region can be spatially and spectrally balanced and thereby effective dual-wavelength emission can be achieved.

UR - http://www.scopus.com/inward/record.url?scp=84994481771&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84994481771&partnerID=8YFLogxK

U2 - 10.1109/JDT.2016.2594044

DO - 10.1109/JDT.2016.2594044

M3 - Article

AN - SCOPUS:84994481771

VL - 12

SP - 1398

EP - 1402

JO - IEEE/OSA Journal of Display Technology

JF - IEEE/OSA Journal of Display Technology

SN - 1551-319X

IS - 11

M1 - 7523243

ER -