Abstract
Auger recombination of dual-wavelength emission in monolithic InGaN light-emitting diodes (LEDs) is numerically investigated. Simulation results show that effective suppression of Auger recombination plays an important role toward the realization of dual-wavelength emission in InGaN LEDs. With appropriate design, the carriers in active region can be spatially and spectrally balanced and thereby effective dual-wavelength emission can be achieved.
| Original language | English |
|---|---|
| Article number | 7523243 |
| Pages (from-to) | 1398-1402 |
| Number of pages | 5 |
| Journal | Journal of Display Technology |
| Volume | 12 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2016 Nov 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Kuo, Y-K., Wang, T. H., Chang, Y. A., Chang, J-Y., Chen, F. M., & Shih, Y. H. (2016). Auger Recombination in Monolithic Dual-Wavelength InGaN Light-Emitting Diodes. Journal of Display Technology, 12(11), 1398-1402. [7523243]. https://doi.org/10.1109/JDT.2016.2594044