Au/Ge/Pd ohmic contacts to n-GaAs with the Mo/Ti diffusion barrier

Chun Yi Chai, Jung A. Huang, Yong Lin Lai, Janne Wha Wu, Chun Yen Chang, Yi Jen Chan, Huang Chung Cheng

Research output: Contribution to journalArticle

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Abstract

The influences of the As-outdiffusion and Au-indiffusion on the performances of the Au/Ge/Pd/n-GaAs ohmic metallization systems are clarified by investigating three different types of barrier metal structures Au/Ge/Pd/GaAs, Au/Ti/Ge/Pd/GaAs, and Au/Mo/Ti/Ge/Pd/GaAs. The results indicate that As-outdiffusion leads to higher specific contact resistivity, whereas Au-indiffusion contributes to the turnaround of the contact resistivity at even higher annealing temperature. For Au/Mo/Ti/Ge/Pd/n-GaAs samples, they exhibit the smoothest surface and the lowest specific contact resistivity with the widest available annealing temperature range. Moreover, Auger electron spectroscopy depth profiles show that the existing Ti oxide for the Mo/Ti bilayer can very effectively retard Au-indiffusion, reflecting the onset of the turnaround point at much higher annealing temperature.

Original languageEnglish
Pages (from-to)1818-1822
Number of pages5
JournalJournal of Electronic Materials
Volume25
Issue number12
DOIs
Publication statusPublished - 1996 Dec

Fingerprint

Diffusion barriers
Ohmic contacts
electric contacts
Annealing
electrical resistivity
annealing
Auger electron spectroscopy
Metallizing
Temperature
Auger spectroscopy
temperature
electron spectroscopy
Oxides
oxides
profiles
Metals
metals
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Chai, C. Y., Huang, J. A., Lai, Y. L., Wu, J. W., Chang, C. Y., Chan, Y. J., & Cheng, H. C. (1996). Au/Ge/Pd ohmic contacts to n-GaAs with the Mo/Ti diffusion barrier. Journal of Electronic Materials, 25(12), 1818-1822. https://doi.org/10.1007/BF02657159
Chai, Chun Yi ; Huang, Jung A. ; Lai, Yong Lin ; Wu, Janne Wha ; Chang, Chun Yen ; Chan, Yi Jen ; Cheng, Huang Chung. / Au/Ge/Pd ohmic contacts to n-GaAs with the Mo/Ti diffusion barrier. In: Journal of Electronic Materials. 1996 ; Vol. 25, No. 12. pp. 1818-1822.
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abstract = "The influences of the As-outdiffusion and Au-indiffusion on the performances of the Au/Ge/Pd/n-GaAs ohmic metallization systems are clarified by investigating three different types of barrier metal structures Au/Ge/Pd/GaAs, Au/Ti/Ge/Pd/GaAs, and Au/Mo/Ti/Ge/Pd/GaAs. The results indicate that As-outdiffusion leads to higher specific contact resistivity, whereas Au-indiffusion contributes to the turnaround of the contact resistivity at even higher annealing temperature. For Au/Mo/Ti/Ge/Pd/n-GaAs samples, they exhibit the smoothest surface and the lowest specific contact resistivity with the widest available annealing temperature range. Moreover, Auger electron spectroscopy depth profiles show that the existing Ti oxide for the Mo/Ti bilayer can very effectively retard Au-indiffusion, reflecting the onset of the turnaround point at much higher annealing temperature.",
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Chai, CY, Huang, JA, Lai, YL, Wu, JW, Chang, CY, Chan, YJ & Cheng, HC 1996, 'Au/Ge/Pd ohmic contacts to n-GaAs with the Mo/Ti diffusion barrier', Journal of Electronic Materials, vol. 25, no. 12, pp. 1818-1822. https://doi.org/10.1007/BF02657159

Au/Ge/Pd ohmic contacts to n-GaAs with the Mo/Ti diffusion barrier. / Chai, Chun Yi; Huang, Jung A.; Lai, Yong Lin; Wu, Janne Wha; Chang, Chun Yen; Chan, Yi Jen; Cheng, Huang Chung.

In: Journal of Electronic Materials, Vol. 25, No. 12, 12.1996, p. 1818-1822.

Research output: Contribution to journalArticle

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T1 - Au/Ge/Pd ohmic contacts to n-GaAs with the Mo/Ti diffusion barrier

AU - Chai, Chun Yi

AU - Huang, Jung A.

AU - Lai, Yong Lin

AU - Wu, Janne Wha

AU - Chang, Chun Yen

AU - Chan, Yi Jen

AU - Cheng, Huang Chung

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N2 - The influences of the As-outdiffusion and Au-indiffusion on the performances of the Au/Ge/Pd/n-GaAs ohmic metallization systems are clarified by investigating three different types of barrier metal structures Au/Ge/Pd/GaAs, Au/Ti/Ge/Pd/GaAs, and Au/Mo/Ti/Ge/Pd/GaAs. The results indicate that As-outdiffusion leads to higher specific contact resistivity, whereas Au-indiffusion contributes to the turnaround of the contact resistivity at even higher annealing temperature. For Au/Mo/Ti/Ge/Pd/n-GaAs samples, they exhibit the smoothest surface and the lowest specific contact resistivity with the widest available annealing temperature range. Moreover, Auger electron spectroscopy depth profiles show that the existing Ti oxide for the Mo/Ti bilayer can very effectively retard Au-indiffusion, reflecting the onset of the turnaround point at much higher annealing temperature.

AB - The influences of the As-outdiffusion and Au-indiffusion on the performances of the Au/Ge/Pd/n-GaAs ohmic metallization systems are clarified by investigating three different types of barrier metal structures Au/Ge/Pd/GaAs, Au/Ti/Ge/Pd/GaAs, and Au/Mo/Ti/Ge/Pd/GaAs. The results indicate that As-outdiffusion leads to higher specific contact resistivity, whereas Au-indiffusion contributes to the turnaround of the contact resistivity at even higher annealing temperature. For Au/Mo/Ti/Ge/Pd/n-GaAs samples, they exhibit the smoothest surface and the lowest specific contact resistivity with the widest available annealing temperature range. Moreover, Auger electron spectroscopy depth profiles show that the existing Ti oxide for the Mo/Ti bilayer can very effectively retard Au-indiffusion, reflecting the onset of the turnaround point at much higher annealing temperature.

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