Atomic-scale epitaxial aluminum film on GaAs substrate

Yen Ting Fan, Ming Cheng Lo, Chu Chun Wu, Peng Yu Chen, Jenq Shinn Wu, Chi Te Liang, Sheng Di Lin

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6 Citations (Scopus)

Abstract

Atomic-scale metal films exhibit intriguing size-dependent film stability, electrical conductivity, superconductivity, and chemical reactivity. With advancing methods for preparing ultra-thin and atomically smooth metal films, clear evidences of the quantum size effect have been experimentally collected in the past two decades. However, with the problems of small-area fabrication, film oxidation in air, and highly-sensitive interfaces between the metal, substrate, and capping layer, the uses of the quantized metallic films for further ex-situ investigations and applications have been seriously limited. To this end, we develop a large-area fabrication method for continuous atomic-scale aluminum film. The self-limited oxidation of aluminum protects and quantizes the metallic film and enables ex-situ characterizations and device processing in air. Structure analysis and electrical measurements on the prepared films imply the quantum size effect in the atomic-scale aluminum film. Our work opens the way for further physics studies and device applications using the quantized electronic states in metals.

Original languageEnglish
Article number075213
JournalAIP Advances
Volume7
Issue number7
DOIs
Publication statusPublished - 2017 Jul 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Fan, Y. T., Lo, M. C., Wu, C. C., Chen, P. Y., Wu, J. S., Liang, C. T., & Lin, S. D. (2017). Atomic-scale epitaxial aluminum film on GaAs substrate. AIP Advances, 7(7), [075213]. https://doi.org/10.1063/1.4991435