Abstract
The resistance of indium–tin–oxide (ITO) film increases with the decrease in film thickness. An ultra-thin ITO (UTITO) film with a high resistance is realised by adjusting the deposition time during sputtering. The fabricated UTITO film is then placed at the interface between the dielectric and liquid crystal (LC) layers in large-aperture hole-patterned LC lens. With an appropriate frequency and amplitude of applied voltage, the inserted UTITO film effectively spreads the voltage into the centre of the large-aperture hole-patterned LC lens, which assists in rotating the LC molecules therein. Consequently, the addressing voltage and switching time of the LC lens can be remarkably decreased. The LC lens with the insertion of UTITO film obtains a low wavefront error and high focusing quality and image performance. The innovative concept for fabricating the low-voltage LC adaptive lens with a UTITO film is competitive to other methods.
| Original language | English |
|---|---|
| Article number | 105603 |
| Journal | Optics and Laser Technology |
| Volume | 119 |
| DOIs | |
| Publication status | Published - 2019 Nov 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
Cite this
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Application of ultra-thin indium–tin–oxide film in liquid crystal lens. / Hsu, Che Ju; Agrahari, Kaushlendra; Selvaraj, Pravinraj; Chiang, Wei Fan; Huang, Chia Yi; Manohar, Rajiv; Huang, Chi-Yen.
In: Optics and Laser Technology, Vol. 119, 105603, 01.11.2019.Research output: Contribution to journal › Article
TY - JOUR
T1 - Application of ultra-thin indium–tin–oxide film in liquid crystal lens
AU - Hsu, Che Ju
AU - Agrahari, Kaushlendra
AU - Selvaraj, Pravinraj
AU - Chiang, Wei Fan
AU - Huang, Chia Yi
AU - Manohar, Rajiv
AU - Huang, Chi-Yen
PY - 2019/11/1
Y1 - 2019/11/1
N2 - The resistance of indium–tin–oxide (ITO) film increases with the decrease in film thickness. An ultra-thin ITO (UTITO) film with a high resistance is realised by adjusting the deposition time during sputtering. The fabricated UTITO film is then placed at the interface between the dielectric and liquid crystal (LC) layers in large-aperture hole-patterned LC lens. With an appropriate frequency and amplitude of applied voltage, the inserted UTITO film effectively spreads the voltage into the centre of the large-aperture hole-patterned LC lens, which assists in rotating the LC molecules therein. Consequently, the addressing voltage and switching time of the LC lens can be remarkably decreased. The LC lens with the insertion of UTITO film obtains a low wavefront error and high focusing quality and image performance. The innovative concept for fabricating the low-voltage LC adaptive lens with a UTITO film is competitive to other methods.
AB - The resistance of indium–tin–oxide (ITO) film increases with the decrease in film thickness. An ultra-thin ITO (UTITO) film with a high resistance is realised by adjusting the deposition time during sputtering. The fabricated UTITO film is then placed at the interface between the dielectric and liquid crystal (LC) layers in large-aperture hole-patterned LC lens. With an appropriate frequency and amplitude of applied voltage, the inserted UTITO film effectively spreads the voltage into the centre of the large-aperture hole-patterned LC lens, which assists in rotating the LC molecules therein. Consequently, the addressing voltage and switching time of the LC lens can be remarkably decreased. The LC lens with the insertion of UTITO film obtains a low wavefront error and high focusing quality and image performance. The innovative concept for fabricating the low-voltage LC adaptive lens with a UTITO film is competitive to other methods.
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U2 - 10.1016/j.optlastec.2019.105603
DO - 10.1016/j.optlastec.2019.105603
M3 - Article
VL - 119
JO - Optics and Laser Technology
JF - Optics and Laser Technology
SN - 0030-3992
M1 - 105603
ER -