Application of ultra-thin indium–tin–oxide film in liquid crystal lens

Che Ju Hsu; Kaushlendra Agrahari; Pravinraj Selvaraj; Wei Fan Chiang; Chia Yi Huang; Rajiv Manohar; Chi-Yen Huang

doi:10.1016/j.optlastec.2019.105603

Application of ultra-thin indium–tin–oxide film in liquid crystal lens

Che Ju Hsu, Kaushlendra Agrahari, Pravinraj Selvaraj, Wei Fan Chiang, Chia Yi Huang, Rajiv Manohar, Chi-Yen Huang

Graduate Institute of Photonics

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

The resistance of indium–tin–oxide (ITO) film increases with the decrease in film thickness. An ultra-thin ITO (UTITO) film with a high resistance is realised by adjusting the deposition time during sputtering. The fabricated UTITO film is then placed at the interface between the dielectric and liquid crystal (LC) layers in large-aperture hole-patterned LC lens. With an appropriate frequency and amplitude of applied voltage, the inserted UTITO film effectively spreads the voltage into the centre of the large-aperture hole-patterned LC lens, which assists in rotating the LC molecules therein. Consequently, the addressing voltage and switching time of the LC lens can be remarkably decreased. The LC lens with the insertion of UTITO film obtains a low wavefront error and high focusing quality and image performance. The innovative concept for fabricating the low-voltage LC adaptive lens with a UTITO film is competitive to other methods.

Original language	English
Article number	105603
Journal	Optics and Laser Technology
Volume	119
DOIs	https://doi.org/10.1016/j.optlastec.2019.105603
Publication status	Published - 2019 Nov 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Cite this

Hsu, C. J., Agrahari, K., Selvaraj, P., Chiang, W. F., Huang, C. Y., Manohar, R., & Huang, C-Y. (2019). Application of ultra-thin indium–tin–oxide film in liquid crystal lens. Optics and Laser Technology, 119, [105603]. https://doi.org/10.1016/j.optlastec.2019.105603

@article{4600d216d95c4193a1f91c419f259865,

title = "Application of ultra-thin indium–tin–oxide film in liquid crystal lens",

abstract = "The resistance of indium–tin–oxide (ITO) film increases with the decrease in film thickness. An ultra-thin ITO (UTITO) film with a high resistance is realised by adjusting the deposition time during sputtering. The fabricated UTITO film is then placed at the interface between the dielectric and liquid crystal (LC) layers in large-aperture hole-patterned LC lens. With an appropriate frequency and amplitude of applied voltage, the inserted UTITO film effectively spreads the voltage into the centre of the large-aperture hole-patterned LC lens, which assists in rotating the LC molecules therein. Consequently, the addressing voltage and switching time of the LC lens can be remarkably decreased. The LC lens with the insertion of UTITO film obtains a low wavefront error and high focusing quality and image performance. The innovative concept for fabricating the low-voltage LC adaptive lens with a UTITO film is competitive to other methods.",

author = "Hsu, {Che Ju} and Kaushlendra Agrahari and Pravinraj Selvaraj and Chiang, {Wei Fan} and Huang, {Chia Yi} and Rajiv Manohar and Chi-Yen Huang",

year = "2019",

month = nov

day = "1",

doi = "10.1016/j.optlastec.2019.105603",

language = "English",

volume = "119",

journal = "Optics and Laser Technology",

issn = "0030-3992",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Application of ultra-thin indium–tin–oxide film in liquid crystal lens

AU - Hsu, Che Ju

AU - Agrahari, Kaushlendra

AU - Selvaraj, Pravinraj

AU - Chiang, Wei Fan

AU - Huang, Chia Yi

AU - Manohar, Rajiv

AU - Huang, Chi-Yen

PY - 2019/11/1

Y1 - 2019/11/1

N2 - The resistance of indium–tin–oxide (ITO) film increases with the decrease in film thickness. An ultra-thin ITO (UTITO) film with a high resistance is realised by adjusting the deposition time during sputtering. The fabricated UTITO film is then placed at the interface between the dielectric and liquid crystal (LC) layers in large-aperture hole-patterned LC lens. With an appropriate frequency and amplitude of applied voltage, the inserted UTITO film effectively spreads the voltage into the centre of the large-aperture hole-patterned LC lens, which assists in rotating the LC molecules therein. Consequently, the addressing voltage and switching time of the LC lens can be remarkably decreased. The LC lens with the insertion of UTITO film obtains a low wavefront error and high focusing quality and image performance. The innovative concept for fabricating the low-voltage LC adaptive lens with a UTITO film is competitive to other methods.

AB - The resistance of indium–tin–oxide (ITO) film increases with the decrease in film thickness. An ultra-thin ITO (UTITO) film with a high resistance is realised by adjusting the deposition time during sputtering. The fabricated UTITO film is then placed at the interface between the dielectric and liquid crystal (LC) layers in large-aperture hole-patterned LC lens. With an appropriate frequency and amplitude of applied voltage, the inserted UTITO film effectively spreads the voltage into the centre of the large-aperture hole-patterned LC lens, which assists in rotating the LC molecules therein. Consequently, the addressing voltage and switching time of the LC lens can be remarkably decreased. The LC lens with the insertion of UTITO film obtains a low wavefront error and high focusing quality and image performance. The innovative concept for fabricating the low-voltage LC adaptive lens with a UTITO film is competitive to other methods.

UR - http://www.scopus.com/inward/record.url?scp=85066264029&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85066264029&partnerID=8YFLogxK

U2 - 10.1016/j.optlastec.2019.105603

DO - 10.1016/j.optlastec.2019.105603

M3 - Article

AN - SCOPUS:85066264029

VL - 119

JO - Optics and Laser Technology

JF - Optics and Laser Technology

SN - 0030-3992

M1 - 105603

ER -

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10.1016/j.optlastec.2019.105603